John G. Ekerdt

10.2k total citations
293 papers, 8.5k citations indexed

About

John G. Ekerdt is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, John G. Ekerdt has authored 293 papers receiving a total of 8.5k indexed citations (citations by other indexed papers that have themselves been cited), including 212 papers in Electrical and Electronic Engineering, 141 papers in Materials Chemistry and 74 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in John G. Ekerdt's work include Semiconductor materials and devices (159 papers), Electronic and Structural Properties of Oxides (59 papers) and Copper Interconnects and Reliability (35 papers). John G. Ekerdt is often cited by papers focused on Semiconductor materials and devices (159 papers), Electronic and Structural Properties of Oxides (59 papers) and Copper Interconnects and Reliability (35 papers). John G. Ekerdt collaborates with scholars based in United States, Bulgaria and China. John G. Ekerdt's co-authors include Blair J. Cox, C. Grant Willson, Alexander A. Demkov, Deborah A. Neumayer, Agham Posadas, Martin D. McDaniel, S. V. Sreenivasan, P. D. Kirsch, Israel E. Wachs and Matthew Colburn and has published in prestigious journals such as Chemical Reviews, Journal of the American Chemical Society and Physical Review Letters.

In The Last Decade

John G. Ekerdt

286 papers receiving 8.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John G. Ekerdt United States 47 4.5k 3.7k 2.6k 1.4k 1.0k 293 8.5k
Guo Qin Xu Singapore 47 3.4k 0.8× 4.2k 1.1× 1.9k 0.7× 1.4k 1.0× 1.2k 1.2× 206 7.5k
Giridhar U. Kulkarni India 53 4.2k 0.9× 4.7k 1.3× 3.3k 1.3× 967 0.7× 727 0.7× 329 9.9k
Jiangtao Hu China 45 9.2k 2.0× 5.7k 1.5× 2.5k 1.0× 978 0.7× 1.1k 1.0× 166 13.2k
Jay B. Benziger United States 50 6.5k 1.4× 3.5k 0.9× 2.4k 1.0× 919 0.7× 2.6k 2.6× 159 9.6k
Bin Wang United States 53 4.2k 0.9× 6.3k 1.7× 2.1k 0.8× 1.1k 0.8× 2.7k 2.7× 298 11.1k
Geunsik Lee South Korea 42 3.0k 0.7× 5.2k 1.4× 1.5k 0.6× 1.0k 0.7× 1.8k 1.8× 159 7.8k
Hua Jiang Finland 58 3.2k 0.7× 7.0k 1.9× 2.3k 0.9× 799 0.6× 1.4k 1.4× 241 10.3k
Abhishek K. Singh India 55 4.0k 0.9× 8.4k 2.3× 1.2k 0.5× 1.0k 0.7× 2.1k 2.0× 237 10.5k
Hansong Cheng China 45 2.7k 0.6× 3.9k 1.1× 717 0.3× 745 0.5× 1.2k 1.1× 168 6.7k
Bing Wang China 46 3.4k 0.7× 5.9k 1.6× 1.2k 0.5× 1.8k 1.3× 3.4k 3.3× 239 8.7k

Countries citing papers authored by John G. Ekerdt

Since Specialization
Citations

This map shows the geographic impact of John G. Ekerdt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John G. Ekerdt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John G. Ekerdt more than expected).

Fields of papers citing papers by John G. Ekerdt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John G. Ekerdt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John G. Ekerdt. The network helps show where John G. Ekerdt may publish in the future.

Co-authorship network of co-authors of John G. Ekerdt

This figure shows the co-authorship network connecting the top 25 collaborators of John G. Ekerdt. A scholar is included among the top collaborators of John G. Ekerdt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John G. Ekerdt. John G. Ekerdt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Pei‐Yu, Sunah Kwon, Daehun Lee, et al.. (2021). Electro-optic response in epitaxially stabilized orthorhombic mm2 BaTiO3. Physical Review Materials. 5(3). 14 indexed citations
2.
Posadas, Agham, Lu Zheng, J. Elliott Ortmann, et al.. (2019). Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications. Journal of Applied Physics. 126(6). 24 indexed citations
3.
Lu, Sirong, Agham Posadas, David J. Smith, et al.. (2018). Effect of SrTiO3 oxygen vacancies on the conductivity of LaTiO3/SrTiO3 heterostructures. Journal of Applied Physics. 124(18). 185303–185303. 26 indexed citations
4.
Posadas, Agham, et al.. (2017). Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition. Journal of Crystal Growth. 476. 6–11. 15 indexed citations
5.
McDaniel, Martin D., Thong Q. Ngo, Agham Posadas, et al.. (2014). A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors. Advanced Materials Interfaces. 1(8). 40 indexed citations
6.
Li, Ji, Martin D. McDaniel, Shijun Wang, et al.. (2014). A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst. Nature Nanotechnology. 10(1). 84–90. 346 indexed citations
7.
Cox, Blair J. & John G. Ekerdt. (2012). Depolymerization of oak wood lignin under mild conditions using the acidic ionic liquid 1-H-3-methylimidazolium chloride as both solvent and catalyst. Bioresource Technology. 118. 584–588. 95 indexed citations
8.
McDaniel, Martin D., Agham Posadas, Thong Q. Ngo, et al.. (2012). Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 46 indexed citations
9.
Heitsch, Andrew T., John G. Ekerdt, & Brian A. Korgel. (2009). NANOLAB at The University of Texas at Austin: A Model for Interdisciplinary Undergraduate Science and Engineering Education.. Chemical Engineering Education. 43(3). 225–231.
10.
Stanley, Scott K., et al.. (2006). Directed nucleation of ordered nanoparticle arrays on amorphous surfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(4). 1913–1917. 9 indexed citations
11.
Stanley, Scott K., et al.. (2005). Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(1). 78–83. 13 indexed citations
12.
Kirsch, P. D. & John G. Ekerdt. (2001). Interfacial chemistry of the Ba/SiO x N y /Si(100) nanostructure. Journal of Vacuum Science and Technology. 19(1). 2222–2231. 8 indexed citations
13.
Kirsch, P. D. & John G. Ekerdt. (2001). Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide. Journal of Applied Physics. 90(8). 4256–4264. 85 indexed citations
14.
Bailey, Travis S., Byung Jin Choi, Matthew Colburn, et al.. (2000). Step and Flash Imprint Lithography: A Technology Review. 11(4). 54–67. 1 indexed citations
15.
Colburn, Matthew, Stephen C. Johnson, M. D. Stewart, et al.. (1999). Step and flash imprint lithography: a new approach to high-resolution patterning. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3676. 379–379. 428 indexed citations
16.
Gong, Bengen, et al.. (1999). Boron-induced stabilization of theSi(100)−(2×1)surface reconstruction. Physical review. B, Condensed matter. 59(23). 15225–15229. 4 indexed citations
17.
Hess, G. B., P. M. Saz Parkinson, Bengen Gong, et al.. (1997). Evolution of subsurface hydrogen from boron-doped Si(100). Applied Physics Letters. 71(15). 2184–2186. 13 indexed citations
18.
Hu, X., Zhi Xu, Dong-Hwan Lim, et al.. (1997). In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001). Applied Physics Letters. 71(10). 1376–1378. 34 indexed citations
19.
Steiner, Peter, et al.. (1994). Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6. Applied Surface Science. 82-83. 359–366. 4 indexed citations
20.
Cowley, Alan H., et al.. (1988). Organometallic chemical vapor deposition of III/V compound semiconductors with novel organometallic precursors. Journal of the American Chemical Society. 110(18). 6248–6249. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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