Katsumi Murase

2.5k total citations
73 papers, 1.9k citations indexed

About

Katsumi Murase is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Katsumi Murase has authored 73 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 18 papers in Biomedical Engineering. Recurrent topics in Katsumi Murase's work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Quantum and electron transport phenomena (30 papers). Katsumi Murase is often cited by papers focused on Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Quantum and electron transport phenomena (30 papers). Katsumi Murase collaborates with scholars based in Japan, France and United States. Katsumi Murase's co-authors include Yasuo Takahashi, Masao Nagase, K. Kurihara, H. Namatsu, K. Iwadate, S. Horiguchi, Hideo Namatsu, Kenji Kurihara, Akira Fujiwara and Kenji Yamazaki and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Katsumi Murase

70 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Katsumi Murase Japan 24 1.7k 1.0k 462 351 126 73 1.9k
Yukinori Ono Japan 21 1.1k 0.7× 906 0.9× 252 0.5× 387 1.1× 91 0.7× 91 1.5k
Michiharu Tabe Japan 24 1.4k 0.9× 766 0.8× 481 1.0× 600 1.7× 38 0.3× 105 1.7k
Rajib Rahman United States 29 1.9k 1.1× 1.8k 1.8× 332 0.7× 836 2.4× 82 0.7× 120 2.9k
Masamichi Akazawa Japan 20 1.1k 0.7× 622 0.6× 197 0.4× 303 0.9× 117 0.9× 97 1.4k
F.‐J. Tegude Germany 21 1.3k 0.8× 766 0.8× 708 1.5× 410 1.2× 10 0.1× 158 1.6k
B. Doris United States 19 1.3k 0.8× 323 0.3× 310 0.7× 364 1.0× 8 0.1× 63 1.5k
J. S. Hubacek United States 8 377 0.2× 621 0.6× 171 0.4× 224 0.6× 11 0.1× 14 808
A. Schlachetzki Germany 18 945 0.6× 875 0.9× 213 0.5× 228 0.6× 13 0.1× 129 1.2k
D. Mocuta Belgium 22 1.3k 0.8× 478 0.5× 271 0.6× 308 0.9× 12 0.1× 89 1.5k
Kalman Pelhos United States 18 252 0.2× 577 0.6× 310 0.7× 303 0.9× 48 0.4× 25 935

Countries citing papers authored by Katsumi Murase

Since Specialization
Citations

This map shows the geographic impact of Katsumi Murase's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Katsumi Murase with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Katsumi Murase more than expected).

Fields of papers citing papers by Katsumi Murase

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Katsumi Murase. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Katsumi Murase. The network helps show where Katsumi Murase may publish in the future.

Co-authorship network of co-authors of Katsumi Murase

This figure shows the co-authorship network connecting the top 25 collaborators of Katsumi Murase. A scholar is included among the top collaborators of Katsumi Murase based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Katsumi Murase. Katsumi Murase is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takahashi, Yasuo, Akira Fujiwara, Kenji Yamazaki, et al.. (2000). Multigate single-electron transistors and their application to an exclusive-OR gate. Applied Physics Letters. 76(5). 637–639. 80 indexed citations
2.
Takahashi, Yasuo, Akira Fujiwara, Masao Nagase, et al.. (1999). Silicon single-electron devices. International Journal of Electronics. 86(5). 605–639. 24 indexed citations
3.
Takahashi, Yasuhiro, Akira Fujiwara, Kenji Yamazaki, et al.. (1998). A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector. 1 indexed citations
4.
Takahashi, Yasuo, Akira Fujiwara, Masao Nagase, et al.. (1996). Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies). IEICE Transactions on Electronics. 79(11). 1503–1508. 3 indexed citations
5.
Takahashi, Yasuo, Akira Fujiwara, Masao Nagase, et al.. (1996). Si Single-Electron Transistors on SIMOX Substrates. IEICE Transactions on Electronics. 1503–1508. 3 indexed citations
6.
Takahashi, Yasuo, S. Horiguchi, Akira Fujiwara, & Katsumi Murase. (1996). Co-tunneling current in very small Si single-electron transistors. Physica B Condensed Matter. 227(1-4). 105–108. 11 indexed citations
7.
Kurihara, K., K. Iwadate, H. Namatsu, Masao Nagase, & Katsumi Murase. (1995). Electron beam nanolithography with image reversal by ECR plasma oxidation. Microelectronic Engineering. 27(1-4). 125–128. 6 indexed citations
8.
Kurihara, Kenji, K. Iwadate, Hideo Namatsu, et al.. (1995). An Electron Beam Nanolithography System and its Application to Si Nanofabrication. Japanese Journal of Applied Physics. 34(12S). 6940–6940. 39 indexed citations
9.
Namatsu, Hideo, Kenji Kurihara, Masao Nagase, K. Iwadate, & Katsumi Murase. (1995). Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water. Applied Physics Letters. 66(20). 2655–2657. 103 indexed citations
10.
Namatsu, H., Masao Nagase, K. Kurihara, et al.. (1995). Fabrication of sub-10-nm silicon lines with minimum fluctuation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1473–1476. 45 indexed citations
11.
Kurihara, K., K. Iwadate, H. Namatsu, Masao Nagase, & Katsumi Murase. (1995). Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(6). 2170–2174. 19 indexed citations
12.
Fujiwara, Atsushi, Yasuo Takahashi, Katsumi Murase, & M. Tabe. (1995). Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands. Applied Physics Letters. 67(20). 2957–2959. 46 indexed citations
13.
Murase, Katsumi. (1994). Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone. Japanese Journal of Applied Physics. 33(3R). 1385–1385. 16 indexed citations
14.
Murase, Katsumi, et al.. (1986). Self-aligned half-micrometer Silicon MASFET's with metallic amorphous Silicon gate. IEEE Transactions on Electron Devices. 33(7). 997–1004. 6 indexed citations
15.
Murase, Katsumi, et al.. (1986). High-barrier rectifying junctions with amorphous silicon alloy electrodes and their application to FET's for LSI's. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 617. 25–25.
16.
Murase, Katsumi & Yoshihito Amemiya. (1985). Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs. Japanese Journal of Applied Physics. 24(2R). 192–192. 6 indexed citations
17.
Murase, Katsumi, et al.. (1984). Voltage-controlled negative resistance in a submicron vertical JFET. Solid-State Electronics. 27(10). 855–866. 1 indexed citations
18.
Murase, Katsumi, T. Ogino, & Yoshihiko Mizushima. (1983). Properties of multicomponent amorphous silicon forming a tetrahedrally-bonded continuous random network. Journal of Non-Crystalline Solids. 59-60. 549–552. 2 indexed citations
19.
Satô, Yoshiyuki, Katsumi Murase, & Hiroyuki Harada. (1982). A Novel Method to Measure Lateral Diffusion Length in Polycrystalline Silicon. Journal of The Electrochemical Society. 129(7). 1635–1638. 3 indexed citations
20.
Murase, Katsumi, et al.. (1976). A highly stabilized AC plasma display. IEEE Transactions on Electron Devices. 23(3). 324–328. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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