F. Cardon

5.5k total citations · 2 hit papers
163 papers, 4.8k citations indexed

About

F. Cardon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Cardon has authored 163 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 124 papers in Electrical and Electronic Engineering, 101 papers in Atomic and Molecular Physics, and Optics and 48 papers in Materials Chemistry. Recurrent topics in F. Cardon's work include Semiconductor materials and interfaces (89 papers), Semiconductor materials and devices (51 papers) and Electrochemical Analysis and Applications (36 papers). F. Cardon is often cited by papers focused on Semiconductor materials and interfaces (89 papers), Semiconductor materials and devices (51 papers) and Electrochemical Analysis and Applications (36 papers). F. Cardon collaborates with scholars based in Belgium, Netherlands and China. F. Cardon's co-authors include W. P. Gomes, R.L. Van Meirhaeghe, W.H. Laflère, Christophe Detavernier, E. C. Dutoit, Daniël Vanmaekelbergh, Roger De Gryse, J. Vénnik, Dirk Poelman and Karen Maex and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Cardon

161 papers receiving 4.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

1986 533 citations R.L. Van Meirhaeghe, W.H. Laflère et al. Solid-State Electronics profile →
On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot

1978 369 citations F. Cardon, W. P. Gomes Journal of Physics D Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Cardon Belgium	35	3.4k	2.6k	1.9k	824	473	163	4.8k
R.L. Van Meirhaeghe Belgium	38	4.1k 1.2×	3.1k 1.2×	1.9k 1.0×	217 0.3×	97 0.2×	153	5.2k
E. Budevski Bulgaria	23	1.6k 0.5×	707 0.3×	1.0k 0.5×	509 0.6×	767 1.6×	54	2.5k
A. Deneuville France	34	1.9k 0.6×	631 0.2×	2.9k 1.5×	170 0.2×	226 0.5×	161	3.7k
I. D. Raistrick United States	25	2.4k 0.7×	441 0.2×	1.2k 0.6×	525 0.6×	377 0.8×	62	4.0k
K. K. Tiong Taiwan	32	2.6k 0.8×	748 0.3×	2.7k 1.5×	544 0.7×	81 0.2×	211	3.8k
K. Bange Germany	27	1.2k 0.4×	546 0.2×	1.1k 0.6×	314 0.4×	160 0.3×	71	2.5k
Thomas Mayer Germany	39	3.8k 1.1×	899 0.3×	2.6k 1.4×	606 0.7×	105 0.2×	154	5.2k
Lada V. Yashina Russia	34	1.7k 0.5×	1.1k 0.4×	2.4k 1.3×	293 0.4×	112 0.2×	160	3.7k
Erich C. Walter United States	19	2.0k 0.6×	350 0.1×	2.1k 1.1×	460 0.6×	257 0.5×	26	3.6k
Martha Ch. Lux‐Steiner Germany	46	6.2k 1.8×	1.9k 0.7×	5.9k 3.2×	478 0.6×	69 0.1×	249	7.3k

Countries citing papers authored by F. Cardon

Since Specialization

Citations

This map shows the geographic impact of F. Cardon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Cardon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Cardon more than expected).

Fields of papers citing papers by F. Cardon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Cardon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Cardon. The network helps show where F. Cardon may publish in the future.

Co-authorship network of co-authors of F. Cardon

This figure shows the co-authorship network connecting the top 25 collaborators of F. Cardon. A scholar is included among the top collaborators of F. Cardon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Cardon. F. Cardon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Ru, Guo-Ping, Jing Liu, Xin-Ping Qu, et al.. (2002). An atomic force microscopy study of thin CoSi/sub 2/ films formed by solid state reaction. a61. 328–331. 2 indexed citations

Detavernier, Christophe, R.L. Van Meirhaeghe, F. Cardon, & Karen Maex. (2001). CoSi2 formation through SiO2. Thin Solid Films. 386(1). 19–26. 23 indexed citations

Detavernier, Christophe, R.L. Van Meirhaeghe, F. Cardon, & Karen Maex. (2000). Influence of mixing entropy on the nucleation ofCoSi2. Physical review. B, Condensed matter. 62(18). 12045–12051. 68 indexed citations

Detavernier, Christophe, R.L. Van Meirhaeghe, F. Cardon, et al.. (2000). CoSi 2 formation in the Ti/Co/SiO2/Si system. Journal of Applied Physics. 88(1). 133–140. 30 indexed citations

Poelman, Dirk, et al.. (1999). Photoluminescence study of SrS: Cu, Ag and SrS1-xSex: Cu, Ag thin films. Ghent University Academic Bibliography (Ghent University). 1 indexed citations

Vanmaekelbergh, Daniël, Jao van de Lagemaat, R.E.I. Schropp, & F. Cardon. (1999). Thermally enhanced quantum efficiency in hydrogenated amorphous silicon p-i-n photodiodes studied by intensity- modulated photocurrent spectroscopy. Philosophical Magazine B. 79(2). 291–318. 1 indexed citations

Callens, Freddy, et al.. (1995). TRANSIENT MICROWAVE PHOTOCONDUCTIVITY AND COMPUTER-SIMULATION STUDY OF IR3+-DOPED AND RH3+-DOPED AGCL MICROCRYSTALS.. Journal of Imaging Science and Technology. 39(5). 393–402.

Poelman, Dirk, et al.. (1995). An XPS study of the dopants' valence states and the composition of CaS1 − xSex:Eu and SrS1 − xSex:Ce thin film electroluminescent devices. Journal of Luminescence. 63(1-2). 19–30. 69 indexed citations

Callens, Freddy, et al.. (1994). COMPUTER-SIMULATION OF TRANSIENT MICROWAVE PHOTOCONDUCTIVITY IN SILVER-HALIDE MICROCRYSTALS.. Journal of Imaging Science and Technology. 38(5). 475–483. 3 indexed citations

10.

Depas, Michel, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1992). A quantitative analysis of capacitance peaks in the impedance of Al/SiO_x/p-Si tunnel diodes. Semiconductor Science and Technology. 7(12). 1476–1483. 34 indexed citations

11.

Bosscher, Veerle De, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1991). Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen. Solid-State Electronics. 34(8). 827–834. 3 indexed citations

12.

Gomes, W. P., et al.. (1989). A comparative study of anodic charge‐transfer kinetics at dark p‐type GaAs and at illuminated n‐type GaAs electrodes in aqueous and in mixed aqueous‐methanolic solutions. Berichte der Bunsengesellschaft für physikalische Chemie. 93(1). 2–7. 8 indexed citations

13.

Meirhaeghe, R.L. Van, F. Cardon, & W. P. Gomes. (1985). A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces. Journal of Electroanalytical Chemistry. 188(1-2). 287–291. 12 indexed citations

14.

Vanmaekelbergh, Daniël, W. P. Gomes, & F. Cardon. (1985). Studies on the n‐GaAs Photoanode in Aqueous Electrolytes. 2. Differential Capacitance Behaviour. Berichte der Bunsengesellschaft für physikalische Chemie. 89(9). 994–998. 28 indexed citations

15.

Meirhaeghe, R.L. Van, W.H. Laflère, Yumin Li, & F. Cardon. (1981). Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer. Journal of Physics D Applied Physics. 14(8). 1505–1512. 6 indexed citations

16.

Meirhaeghe, R.L. Van, F. Cardon, & W. P. Gomes. (1980). Effects of thin oxide layers on the characteristics of GaAs MIS solar cells. physica status solidi (a). 59(2). 477–484. 19 indexed citations

17.

Cardon, F. & W. P. Gomes. (1978). On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot. Journal of Physics D Applied Physics. 11(4). L63–L67. 369 indexed citations breakdown →

18.

Laflère, W.H., R.L. Van Meirhaeghe, F. Cardon, & W. P. Gomes. (1978). On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal schottky barriers. Surface Science. 74(1). 125–140. 11 indexed citations

19.

Cardon, F., et al.. (1974). Electron Transfer Involving Tunneling from Surface States at the Dark Anodic CdS/Indifferent Electrolyte Interface. Berichte der Bunsengesellschaft für physikalische Chemie. 78(4). 331–335. 7 indexed citations

20.

Cardon, F.. (1963). Impact Ionization of Centers in Solids by Electrons Accelerated by an Electric Field. physica status solidi (b). 3(2). 339–348. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact