A. Corrion

2.7k citations

50 papers · 2.2k indexed · 1 hit paper · h-index 24

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 49
- GaN-based semiconductor devices and materials 49
Electronic, Optical and Magnetic Materials 25
- Ga2O3 and related materials 25

Co-authors: M. Micovic K. Shinohara David F. Brown D. Regan Joel Wong James S. Speck Helen Fung C. Poblenz
Journals: IEEE Electron Device Letters (12 papers)Journal of Applied Physics (3 papers)Electronics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Journal of materials research/Pratt's guide to venture capital sources (1 paper)
Partner nations: United States Taiwan

In The Last Decade

A. Corrion

50 papers receiving 2.0k citations

Hit Papers

align trajectories log scale

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications 2013 · 395 citations

Peers

Countries citing papers authored by A. Corrion

Since Specialization

Citations

This map shows the geographic impact of A. Corrion's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Corrion with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Corrion more than expected).

Fields of papers citing papers by A. Corrion

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Corrion. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Corrion. The network helps show where A. Corrion may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Corrion, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Corrion Line = papers co-authored together A. Corrion links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process Renata Erstić, A. Corrion, Georges Siddiqi, 一郎境, علي آل زهير القحطاني, Erdem Arkun, Putri Rizkayati, Cíntia Felício Adriano, H. P. Moyer, Tenzin Choden Gyeltshen, J. Andrew Carlson, L. Chalal	2023	4
2	Selective anisotropic etching of GaN over AlGaN for very thin films Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Joel Wong, M. Micovic, David F. Brown, 卓也角田, Shan-Shun Yang, A. Corrion	2018	8
3	Architected Microlattice Materials by Self-Propagating Waveguide Processing TechConnect Briefs ·Bradley A MacLean, A. Corrion, Zak C. Eckel, Jacob M. Hundley, Christopher S. Roper, Tobias A. Schaedler	2017	3
4	Silicon-packaged GaN power HEMTs with integrated heat spreaders Florian Herrault, David Gordon, A. Margomenos, A. Corrion, K. Shinohara, M. Micovic	2015	2
5	GaN Technology for E, W and G-Band Applications A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, David F. Brown, A. Corrion, H. P. Moyer, Shawn D. Burnham, D. Regan, Robert Grabar, C. McGuire, Meredith Wetzel, R. Bowen, Oteng Evans, Makiko Wakabayashi, A. Schmitz, Helen Fung, A. Fung, D. H. Chow	2014	80
6	Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy Journal of Applied Physics ·A. Corrion, Feng Wu, James S. Speck	2012	37
7	Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT И.В. Ахметвалеева, Rongming Chu, Alvin Savage, D. Wong, Foroogh Bakhtiari, Cs. Buga, Duan Ming-tao, Daniel Zehnder, L Wang, A. Corrion, B. Hughes, K. S. Boutros, Chandra Namuduri	2012	2
8	Self-aligned-gate GaN-HEMTs with heavily-doped n<sup>+</sup>-GaN ohmic contacts to 2DEG K. Shinohara, D. Regan, A. Corrion, David F. Brown, 윤귀현, Joel Wong, 吴娟 Wu Juan, A. Schmitz, Helen Fung, L Wang, M. Micovic	2012	55
9	Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K. Shinohara, D. Regan, A. Corrion, David F. Brown, Shawn D. Burnham, P. J. Willadsen, I. Alvarado-Rodriguez, M. Cunningham, C. Butler, Helena Tuririday, L Wang, T. S. Fedoseeva, David T. Chang, Ignacio Machorro, Z Baigireyeva, P.M. Asbeck, M. Micovic	2011	87
10	Device scaling technologies for ultra-high-speed GaN-HEMTs K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, David F. Brown, Shawn D. Burnham, P. J. Willadsen, C. Butler, A. Schmitz, L Wang, Ignacio Machorro, Z Baigireyeva, P.M. Asbeck, M. Micovic	2011	4
11	High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al 2 O 3 Gate Insulators A. Corrion, K. Shinohara, D. Regan, I. Milosavljevic, P. Hashimoto, P. J. Willadsen, Helena Tuririday, Chabriat H, C. Butler, David F. Brown, Shawn D. Burnham, M. Micovic	2011	3
12	Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth IEEE Transactions on Electron Devices ·David F. Brown, K. Shinohara, Andrew Williams, I. Milosavljevic, Robert Grabar, P. Hashimoto, P. J. Willadsen, A. Schmitz, A. Corrion, Elena Moldovan, D. Regan, C. Butler, Shawn D. Burnham, M. Micovic	2011	27
13	Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ IEEE Electron Device Letters ·A. Corrion, K. Shinohara, D. Regan, I. Milosavljevic, P. Hashimoto, P. J. Willadsen, A. Schmitz, D. Wheeler, C. Butler, David F. Brown, Shawn D. Burnham, M. Micovic	2010	51
14	220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic K. Shinohara, A. Corrion, D. Regan, I. Milosavljevic, David F. Brown, Shawn D. Burnham, P. J. Willadsen, C. Butler, A. Schmitz, D. Wheeler, A. Fung, M. Micovic	2010	42
15	Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors Journal of Applied Physics ·A. Corrion, C. Poblenz, Feng Wu, James S. Speck	2008	44
16	Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics ·Andrew Armstrong, Carina Torstensson, A. Corrion, C. Poblenz, Umesh K. Mishra, James S. Speck, Steven A. Ringel	2008	20
17	Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation IEEE MTT-S International Microwave Symposium digest ·L. Shen, Yi Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2007	10
18	Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz IEEE Electron Device Letters ·C. Poblenz, A. Corrion, Baixiang, Chang Soo Suh, Rongming Chu, Likun Shen, James S. Speck, Umesh K. Mishra	2007	26
19	Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment IEEE Electron Device Letters ·L. Shen, Tomás Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2006	52
20	Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature IEEE Electron Device Letters ·Baixiang, L. McCarthy, Siddharth Rajan, A. Chakraborty, C. Poblenz, A. Corrion, James S. Speck, Umesh K. Mishra	2006	71

About A. Corrion

A. Corrion is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 50 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (49 papers), Radio Frequency Integrated Circuit Design (26 papers), Ga2O3 and related materials (25 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (10 papers), Silicon Carbide Semiconductor Technologies (6 papers), ZnO doping and properties (6 papers) and Metal and Thin Film Mechanics (4 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Electronic, Optical and Magnetic Materials (925 citations), Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (501 citations) and Materials Chemistry (335 citations). A. Corrion has collaborated with scholars based in United States and Taiwan. Frequent co-authors include M. Micovic, K. Shinohara, David F. Brown, D. Regan, Joel Wong, James S. Speck, Helen Fung, C. Poblenz, Adele Schmitz and Yan Tang. Their work appears in journals such as IEEE Electron Device Letters, Journal of Applied Physics, Electronics Letters, IEEE Transactions on Electron Devices and Journal of materials research/Pratt's guide to venture capital sources.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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