Manato Deki

1.3k total citations
70 papers, 1.0k citations indexed

About

Manato Deki is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Manato Deki has authored 70 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Condensed Matter Physics, 46 papers in Electrical and Electronic Engineering and 24 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Manato Deki's work include GaN-based semiconductor devices and materials (55 papers), Semiconductor materials and devices (31 papers) and Ga2O3 and related materials (24 papers). Manato Deki is often cited by papers focused on GaN-based semiconductor devices and materials (55 papers), Semiconductor materials and devices (31 papers) and Ga2O3 and related materials (24 papers). Manato Deki collaborates with scholars based in Japan, Singapore and India. Manato Deki's co-authors include Hiroshi Amano, Yoshio Honda, Shugo Nitta, Atsushi Tanaka, Yuto Ando, Maki Kushimoto, Shigeyoshi Usami, Kentaro Nagamatsu, Hirotaka Watanabe and Yongzhao Yao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Manato Deki

68 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Manato Deki Japan 18 805 645 427 261 195 70 1.0k
Johji Nishio Japan 16 497 0.6× 862 1.3× 283 0.7× 323 1.2× 574 2.9× 87 1.3k
Jana Hartmann Germany 16 377 0.5× 231 0.4× 212 0.5× 321 1.2× 84 0.4× 44 618
Z.-Q. Fang United States 21 678 0.8× 756 1.2× 424 1.0× 382 1.5× 372 1.9× 45 1.1k
Kathryn M. Kelchner United States 17 657 0.8× 329 0.5× 204 0.5× 325 1.2× 459 2.4× 29 876
B. Borisov United States 15 639 0.8× 310 0.5× 424 1.0× 304 1.2× 164 0.8× 43 788
J. Massies France 15 557 0.7× 372 0.6× 285 0.7× 350 1.3× 541 2.8× 36 964
I. Daumiller Germany 16 1.1k 1.3× 798 1.2× 401 0.9× 370 1.4× 338 1.7× 41 1.3k
A. Usikov Russia 21 1.4k 1.7× 566 0.9× 792 1.9× 747 2.9× 511 2.6× 120 1.6k
Mamoru Imade Japan 20 1.2k 1.4× 432 0.7× 771 1.8× 775 3.0× 281 1.4× 91 1.3k
В. В. Ратников Russia 16 561 0.7× 318 0.5× 285 0.7× 380 1.5× 230 1.2× 79 799

Countries citing papers authored by Manato Deki

Since Specialization
Citations

This map shows the geographic impact of Manato Deki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Manato Deki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Manato Deki more than expected).

Fields of papers citing papers by Manato Deki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Manato Deki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Manato Deki. The network helps show where Manato Deki may publish in the future.

Co-authorship network of co-authors of Manato Deki

This figure shows the co-authorship network connecting the top 25 collaborators of Manato Deki. A scholar is included among the top collaborators of Manato Deki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Manato Deki. Manato Deki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deki, Manato, Jia Wang, Hirotaka Watanabe, et al.. (2023). Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic. Applied Physics Letters. 122(14). 11 indexed citations
2.
Watanabe, Hirotaka, Manato Deki, Shugo Nitta, et al.. (2022). Substitutional diffusion of Mg into GaN from GaN/Mg mixture. Applied Physics Express. 15(11). 116505–116505. 10 indexed citations
3.
Nitta, Shugo, et al.. (2022). Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy. Journal of Applied Physics. 132(14). 9 indexed citations
4.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2022). An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources. IEEE Journal of the Electron Devices Society. 10. 797–807.
5.
Watanabe, Hirotaka, Yuto Ando, Emi Kano, et al.. (2022). Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN. Applied Physics Express. 15(2). 21003–21003. 5 indexed citations
6.
Ando, Yuto, Manato Deki, Hirotaka Watanabe, et al.. (2021). Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility. Applied Physics Express. 14(8). 81001–81001. 5 indexed citations
7.
Ando, Yuto, Manato Deki, Hirotaka Watanabe, et al.. (2021). Experimental demonstration of GaN IMPATT diode at X-band. Applied Physics Express. 14(4). 46501–46501. 25 indexed citations
8.
Deki, Manato, Jia Wang, Yuto Ando, et al.. (2021). Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. Applied Physics Letters. 119(24). 20 indexed citations
9.
Ando, Yuto, Kentaro Nagamatsu, Manato Deki, et al.. (2020). Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces. Applied Physics Letters. 117(10). 27 indexed citations
10.
Sato, Shin, Manato Deki, Tomoaki Nishimura, et al.. (2020). Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 479. 7–12. 1 indexed citations
11.
Ando, Yuto, Hirotaka Watanabe, Manato Deki, et al.. (2020). Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics. 60(SB). SBBD03–SBBD03. 19 indexed citations
12.
Sato, Shin, Manato Deki, Hirotaka Watanabe, et al.. (2020). Optical properties of neodymium ions in nanoscale regions of gallium nitride. Optical Materials Express. 10(10). 2614–2614. 7 indexed citations
13.
Usami, Shigeyoshi, Yuto Ando, Atsushi Tanaka, et al.. (2019). Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability. Japanese Journal of Applied Physics. 58(SC). SCCD25–SCCD25. 51 indexed citations
14.
Sato, Shin, Manato Deki, Tohru Nakamura, et al.. (2019). Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride. Japanese Journal of Applied Physics. 58(5). 51011–51011. 5 indexed citations
15.
Arulkumaran, S., Kumud Ranjan, Geok Ing Ng, et al.. (2019). Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Sensors. 19(23). 5107–5107. 10 indexed citations
16.
Arulkumaran, S., Geok Ing Ng, Kumud Ranjan, et al.. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances. 9(4). 13 indexed citations
17.
Ye, Zheng, Shugo Nitta, Kentaro Nagamatsu, et al.. (2019). Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth. Journal of Crystal Growth. 516. 63–66. 13 indexed citations
18.
Liu, Zhibin, Shugo Nitta, Yoann Robin, et al.. (2018). Morphological study of InGaN on GaN substrate by supersaturation. Journal of Crystal Growth. 508. 58–65. 11 indexed citations
19.
Deki, Manato, et al.. (2018). Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga2O3 passivated by sputtering. Japanese Journal of Applied Physics. 57(7). 70302–70302. 5 indexed citations
20.
Liu, Zhibin, Shugo Nitta, Shigeyoshi Usami, et al.. (2018). Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 509. 50–53. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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