Shawn D. Burnham

1.4k total citations
38 papers, 1.2k citations indexed

About

Shawn D. Burnham is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shawn D. Burnham has authored 38 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shawn D. Burnham's work include GaN-based semiconductor devices and materials (38 papers), Ga2O3 and related materials (19 papers) and Radio Frequency Integrated Circuit Design (14 papers). Shawn D. Burnham is often cited by papers focused on GaN-based semiconductor devices and materials (38 papers), Ga2O3 and related materials (19 papers) and Radio Frequency Integrated Circuit Design (14 papers). Shawn D. Burnham collaborates with scholars based in United States, France and Italy. Shawn D. Burnham's co-authors include M. Micovic, W. Alan Doolittle, David F. Brown, K. Shinohara, C. Butler, P. Hashimoto, P. J. Willadsen, Gon Namkoong, D. Regan and A. Corrion and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Shawn D. Burnham

38 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shawn D. Burnham United States 21 1.0k 885 402 323 217 38 1.2k
P. Hashimoto United States 25 1.4k 1.4× 1.4k 1.6× 472 1.2× 418 1.3× 155 0.7× 44 1.6k
L. Kehias United States 10 948 0.9× 823 0.9× 337 0.8× 288 0.9× 189 0.9× 22 1.1k
P. J. Willadsen United States 18 870 0.8× 899 1.0× 315 0.8× 240 0.7× 83 0.4× 30 1.0k
M. Antcliffe United States 16 565 0.6× 707 0.8× 199 0.5× 241 0.7× 255 1.2× 27 884
D. Regan United States 17 1.1k 1.1× 1.1k 1.2× 518 1.3× 311 1.0× 161 0.7× 27 1.3k
J.A. Roussos United States 18 1.1k 1.1× 974 1.1× 498 1.2× 290 0.9× 320 1.5× 49 1.3k
A. Corrion United States 24 1.9k 1.9× 1.7k 1.9× 925 2.3× 501 1.6× 335 1.5× 50 2.2k
Andreas R. Alt Switzerland 16 680 0.7× 683 0.8× 262 0.7× 261 0.8× 85 0.4× 29 834
Jeong-Yeol Han South Korea 11 471 0.5× 298 0.3× 228 0.6× 191 0.6× 207 1.0× 31 580

Countries citing papers authored by Shawn D. Burnham

Since Specialization
Citations

This map shows the geographic impact of Shawn D. Burnham's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shawn D. Burnham with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shawn D. Burnham more than expected).

Fields of papers citing papers by Shawn D. Burnham

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shawn D. Burnham. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shawn D. Burnham. The network helps show where Shawn D. Burnham may publish in the future.

Co-authorship network of co-authors of Shawn D. Burnham

This figure shows the co-authorship network connecting the top 25 collaborators of Shawn D. Burnham. A scholar is included among the top collaborators of Shawn D. Burnham based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shawn D. Burnham. Shawn D. Burnham is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Micovic, M., David F. Brown, A. Kurdoghlian, et al.. (2017). GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band. IEEE Electron Device Letters. 38(12). 1708–1711. 23 indexed citations
2.
Micovic, M., David F. Brown, D. Regan, et al.. (2017). High Frequency GaN HEMTs for RF MMIC Applications. 3 indexed citations
3.
Micovic, M., David F. Brown, D. Regan, et al.. (2016). Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology. 1–4. 39 indexed citations
4.
Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2014). GaN Technology for E, W and G-Band Applications. 1–4. 80 indexed citations
5.
Brown, David F., K. Shinohara, A. Corrion, et al.. (2013). High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates. IEEE Electron Device Letters. 34(9). 1118–1120. 28 indexed citations
6.
Micovic, M., A. Kurdoghlian, A. Margomenos, et al.. (2012). 92–96 GHz GaN power amplifiers. 1–3. 84 indexed citations
7.
Burnham, Shawn D., P. J. Willadsen, P. Hashimoto, et al.. (2011). Reliability of T‐gate AlGaN/GaN HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2399–2403. 13 indexed citations
8.
Corrion, A., K. Shinohara, D. Regan, et al.. (2011). High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al 2 O 3 Gate Insulators. 3 indexed citations
9.
Shinohara, K., D. Regan, A. Corrion, et al.. (2011). Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency. 19.1.1–19.1.4. 87 indexed citations
10.
Shinohara, K., D. Regan, I. Milosavljevic, et al.. (2011). Device scaling technologies for ultra-high-speed GaN-HEMTs. 90. 275–278. 4 indexed citations
11.
Corrion, A., Rongming Chu, Shawn D. Burnham, et al.. (2011). Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al<inf>2</inf>O<inf>3</inf> gate dielectric. 45. 213–214. 6 indexed citations
12.
Corrion, A., K. Shinohara, D. Regan, et al.. (2010). Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$. IEEE Electron Device Letters. 31(10). 1116–1118. 51 indexed citations
13.
Shinohara, K., A. Corrion, D. Regan, et al.. (2010). 220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic. 30.1.1–30.1.4. 42 indexed citations
14.
Henderson, Walter, et al.. (2008). Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal‐organic molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1723–1725. 1 indexed citations
15.
Burnham, Shawn D.. (2007). Improved understanding and control of magnesium-doped gallium nitride by plasma assisted molecular beam epitaxy. PhDT. 4 indexed citations
16.
Namkoong, Gon, Walter Henderson, Shawn D. Burnham, et al.. (2006). InN: A material with photovoltaic promise and challenges. Journal of Crystal Growth. 288(2). 218–224. 73 indexed citations
17.
Burnham, Shawn D. & W. Alan Doolittle. (2006). In situgrowth regime characterization of AlN using reflection high energy electron diffraction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(4). 2100–2104. 27 indexed citations
18.
19.
Burnham, Shawn D., Gon Namkoong, Walter Henderson, & W. Alan Doolittle. (2005). Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control. Journal of Crystal Growth. 279(1-2). 26–30. 15 indexed citations
20.
Namkoong, Gon, Shawn D. Burnham, W. Alan Doolittle, et al.. (2005). III-nitrides on oxygen- and zinc-face ZnO substrates. Applied Physics Letters. 87(18). 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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