M. Micovic

4.8k citations
127 papers · 3.9k indexed · 1 hit paper · h-index 37

M. Micovic

124 papers receiving 3.6k citations

Hit Papers

Scaling of GaN HEMTs and Schottky Diodes for Submillimete...3952013202620172021100200300

Peers

M. Micovic
Comparison fields: 5 of 47
  • Condensed Matter Physics 2.7k
  • Electrical and Electronic Engineering 3.2k
  • Electronic, Optical and Magnetic Materials 990
  • Atomic and Molecular Physics, and Optics 1.2k
  • Materials Chemistry 448
Replace C. Skierbiszewski with:
C. Skierbiszewski Poland
B. E. Foutz United States
C. R. Bolognesi Switzerland
S.C. Binari United States
Francesco Bertazzi Italy
M. Mikulla Germany
B. Roas Germany
G.J. Sullivan United States
C. E. Stutz United States
R.G. Humphreys United Kingdom
M. Micovic relative to C. Skierbiszewski Poland C. Skierbiszewski's profile →
Citations per field
00.5×1.5×2.1×
C. Skierbiszewski · 1×
Citations per year

Countries citing papers authored by M. Micovic

Since Specialization
Citations

This map shows the geographic impact of M. Micovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Micovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Micovic more than expected).

Fields of papers citing papers by M. Micovic

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Micovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Micovic. The network helps show where M. Micovic may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Micovic, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Micovic Line = papers co-authored together M. Micovic links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 20188
2 201736
3 201721
4 201723
5 20173
6 201480
7 201217
8
70–105 GHz wideband GaN power amplifiers
201217
9 201187
10 201113
11 20114
12
High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al 2 O 3 Gate Insulators
20113
13 201040
14 200675
15 20051
16 200121
17 19984
18
Measurement and interpretation of the high-frequency characteristics of InAlAs/InGaAs/InP MSM photodetectors
19961
19
Development of 2.2-/spl mu/m InGaAs photodetectors using molecular beam epitaxy
19961
20 199222

About M. Micovic

M. Micovic is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 127 papers that have together received 3.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (83 papers), Radio Frequency Integrated Circuit Design (75 papers), Semiconductor Quantum Structures and Devices (53 papers), Semiconductor materials and devices (32 papers), Ga2O3 and related materials (21 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Lasers and Optical Devices (15 papers) and Advanced Power Amplifier Design (13 papers). The work is most often cited by research in Condensed Matter Physics (2.7k citations), Electrical and Electronic Engineering (3.2k citations), Electronic, Optical and Magnetic Materials (990 citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Materials Chemistry (448 citations). M. Micovic has collaborated with scholars based in United States, Canada and Italy. Frequent co-authors include P. Hashimoto, David F. Brown, K. Shinohara, D. Regan, Ming Hu, A. Kurdoghlian, A. Corrion, Wei-Ting Wong, P. J. Willadsen and A. Schmitz. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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