Joel Wong

1.5k total citations · 1 hit paper
30 papers, 1.2k citations indexed

About

Joel Wong is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Joel Wong has authored 30 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Joel Wong's work include GaN-based semiconductor devices and materials (25 papers), Radio Frequency Integrated Circuit Design (23 papers) and Ga2O3 and related materials (9 papers). Joel Wong is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Radio Frequency Integrated Circuit Design (23 papers) and Ga2O3 and related materials (9 papers). Joel Wong collaborates with scholars based in United States, Australia and Taiwan. Joel Wong's co-authors include M. Micovic, David F. Brown, A. Corrion, D. Regan, Helen Fung, Yan Tang, K. Shinohara, Adele Schmitz, Thomas C. Oh and John F. Robinson and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

Joel Wong

29 papers receiving 1.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

2013 395 citations K. Shinohara, D. Regan et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Joel Wong United States	16	1.0k	940	438	285	150	30	1.2k
M. Antcliffe United States	16	565 0.6×	707 0.8×	199 0.5×	241 0.8×	255 1.7×	27	884
Yasuo Ohno Japan	17	706 0.7×	832 0.9×	240 0.5×	262 0.9×	179 1.2×	90	1.0k
Andreas R. Alt Switzerland	16	680 0.7×	683 0.7×	262 0.6×	261 0.9×	85 0.6×	29	834
L. Kehias United States	10	948 0.9×	823 0.9×	337 0.8×	288 1.0×	189 1.3×	22	1.1k
J.A. Roussos United States	18	1.1k 1.1×	974 1.0×	498 1.1×	290 1.0×	320 2.1×	49	1.3k
Yingkui Zheng China	16	645 0.6×	528 0.6×	328 0.7×	165 0.6×	136 0.9×	45	706
A. Margomenos United States	15	495 0.5×	881 0.9×	201 0.5×	194 0.7×	81 0.5×	36	995
Matthew Guidry United States	20	1.1k 1.1×	831 0.9×	474 1.1×	341 1.2×	256 1.7×	57	1.2k
Brian Romanczyk United States	20	1.1k 1.1×	894 1.0×	482 1.1×	373 1.3×	282 1.9×	58	1.3k

Countries citing papers authored by Joel Wong

Since Specialization

Citations

This map shows the geographic impact of Joel Wong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joel Wong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joel Wong more than expected).

Fields of papers citing papers by Joel Wong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joel Wong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joel Wong. The network helps show where Joel Wong may publish in the future.

Co-authorship network of co-authors of Joel Wong

This figure shows the co-authorship network connecting the top 25 collaborators of Joel Wong. A scholar is included among the top collaborators of Joel Wong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Joel Wong. Joel Wong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Moon, Jeong‐Sun, Joel Wong, Erdem Arkun, et al.. (2023). High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs. 2 indexed citations

2.

Herrault, Florian, et al.. (2023). Process Design Kit and Initial Demonstration of Digital Metal-Embedded Chip Assembly for High Density IO Fan-Out Packaging. 623–628.

3.

Moon, Jeong‐Sun, Joel Wong, Erdem Arkun, et al.. (2022). W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(2). 161–164. 36 indexed citations

4.

Herrault, Florian, et al.. (2022). 10μm Pitch Bumping of Singulated Die Using a Temporary Metal-Embedded Chip Assembly Process. 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC). 1000–1004. 2 indexed citations

5.

Moon, Jeong‐Sun, et al.. (2022). Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs. 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022. 302–304. 7 indexed citations

6.

Moon, Jeong‐Sun, et al.. (2022). Ultra-Linear and High-Efficiency GaN Technology for 5G and Beyond. 5–7. 4 indexed citations

7.

Moon, Jeong‐Sun, et al.. (2021). Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f_T. IEEE Electron Device Letters. 42(6). 796–799. 60 indexed citations

8.

Herrault, Florian, et al.. (2021). Chiplets in Wafers (CiW) - Process Design Kit and Demonstration of High-Frequency Circuits with GaN Chiplets in Silicon Interposers. 178–184. 5 indexed citations

9.

Herrault, Florian, et al.. (2020). Heterogeneously Integrated RF Circuits Using Highly Scaled off-the-Shelf GaN HEMT Chiplets. IEEE Microwave and Wireless Components Letters. 30(11). 1061–1064. 12 indexed citations

10.

Moon, Jeong‐Sun, Joel Wong, M. Antcliffe, et al.. (2019). Novel High-speed Linear GaN Technology with High Efficiency. 1130–1132. 20 indexed citations

11.

Moon, Jeong‐Sun, Joel Wong, M. Antcliffe, et al.. (2019). (Invited) High-Speed and Linear Graded-Channel GaN FETs. ECS Meeting Abstracts. MA2019-02(25). 1172–1172. 2 indexed citations

12.

Wong, Joel, et al.. (2018). Selective anisotropic etching of GaN over AlGaN for very thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 36(3). 8 indexed citations

13.

Brown, David F., Yan Tang, D. Regan, Joel Wong, & M. Micovic. (2017). Self-Aligned AlGaN/GaN FinFETs. IEEE Electron Device Letters. 38(10). 1445–1448. 21 indexed citations

14.

Micovic, M., David F. Brown, A. Kurdoghlian, et al.. (2017). GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band. IEEE Electron Device Letters. 38(12). 1708–1711. 23 indexed citations

15.

Micovic, M., David F. Brown, D. Regan, et al.. (2017). High Frequency GaN HEMTs for RF MMIC Applications. 3 indexed citations

16.

Micovic, M., David F. Brown, D. Regan, et al.. (2016). Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology. 1–4. 39 indexed citations

17.

Micovic, M., David F. Brown, D. Regan, et al.. (2016). High frequency GaN HEMTs for RF MMIC applications. 3.3.1–3.3.4. 69 indexed citations

18.

Tang, Yan, K. Shinohara, D. Regan, et al.. (2015). Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz. IEEE Electron Device Letters. 36(6). 549–551. 224 indexed citations

19.

Brown, David F., K. Shinohara, A. Corrion, et al.. (2013). High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates. IEEE Electron Device Letters. 34(9). 1118–1120. 28 indexed citations

20.

Shinohara, K., D. Regan, A. Corrion, et al.. (2012). Self-aligned-gate GaN-HEMTs with heavily-doped n<sup>+</sup>-GaN ohmic contacts to 2DEG. 27.2.1–27.2.4. 55 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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