C. McGuire

1.1k total citations
22 papers, 823 citations indexed

About

C. McGuire is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. McGuire has authored 22 papers receiving a total of 823 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. McGuire's work include GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (9 papers). C. McGuire is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (9 papers). C. McGuire collaborates with scholars based in United States. C. McGuire's co-authors include J. S. Moon, D. Wong, Ming Hu, D. Kurt Gaskill, P. M. Campbell, M. Micovic, Charles R. Eddy, Daniel J. Curtis, Brenda L. VanMil and Glenn G. Jernigan and has published in prestigious journals such as IEEE Electron Device Letters, Electronics Letters and IEEE Microwave and Wireless Components Letters.

In The Last Decade

C. McGuire

21 papers receiving 791 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. McGuire United States	14	630	376	340	233	123	22	823
M. Antcliffe United States	16	707 1.1×	255 0.7×	565 1.7×	241 1.0×	102 0.8×	27	884
Yunkun Yang China	14	215 0.3×	265 0.7×	139 0.4×	337 1.4×	76 0.6×	35	581
N. Tellmann Germany	9	181 0.3×	107 0.3×	319 0.9×	165 0.7×	161 1.3×	13	465
Yu. G. Sadofyev Russia	15	433 0.7×	307 0.8×	116 0.3×	495 2.1×	56 0.5×	67	667
Praveen Deorani Singapore	12	349 0.6×	386 1.0×	317 0.9×	899 3.9×	78 0.6×	13	1.0k
Ioulia Smorchkova United States	16	610 1.0×	92 0.2×	586 1.7×	206 0.9×	96 0.8×	31	724
E. J. Pakulis United States	10	327 0.5×	301 0.8×	185 0.5×	227 1.0×	205 1.7×	18	556
Torben R. Fortune United States	14	387 0.6×	133 0.4×	263 0.8×	169 0.7×	58 0.5×	26	521
A.F.M. Anwar United States	17	763 1.2×	129 0.3×	422 1.2×	502 2.2×	72 0.6×	83	955

Countries citing papers authored by C. McGuire

Since Specialization

Citations

This map shows the geographic impact of C. McGuire's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. McGuire with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. McGuire more than expected).

Fields of papers citing papers by C. McGuire

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. McGuire. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. McGuire. The network helps show where C. McGuire may publish in the future.

Co-authorship network of co-authors of C. McGuire

This figure shows the co-authorship network connecting the top 25 collaborators of C. McGuire. A scholar is included among the top collaborators of C. McGuire based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. McGuire. C. McGuire is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Micovic, M., David F. Brown, D. Regan, et al.. (2017). High Frequency GaN HEMTs for RF MMIC Applications. 3 indexed citations

Moon, J. S., Robert Grabar, David F. Brown, et al.. (2016). >70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning. IEEE Electron Device Letters. 37(3). 272–275. 37 indexed citations

Micovic, M., David F. Brown, D. Regan, et al.. (2016). High frequency GaN HEMTs for RF MMIC applications. 3.3.1–3.3.4. 69 indexed citations

Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2014). GaN Technology for E, W and G-Band Applications. 1–4. 80 indexed citations

Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2014). W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology. 18 indexed citations

Margomenos, A., K. Shinohara, D. Regan, et al.. (2014). Multilayer, low‐parasitic, interconnection scheme for advanced submillimetre‐wave GaN circuits. Electronics Letters. 50(4). 302–303. 2 indexed citations

Margomenos, A., Florian Herrault, M. Micovic, et al.. (2014). Wafer-level packaging method incorporating embedded thermal management for GaN-based RF front-ends. 31. 976–981. 4 indexed citations

Moon, J. S., M. Antcliffe, C. McGuire, et al.. (2013). Graphene FETs for Zero-Bias Linear Resistive FET Mixers. IEEE Electron Device Letters. 34(3). 465–467. 48 indexed citations

Margomenos, A., M. Micovic, A. Kurdoghlian, et al.. (2013). X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management. 1–4. 10 indexed citations

10.

Moon, J. S., H. P. Moyer, D. Wong, et al.. (2012). High efficiency X-band class-E GaN MMIC high-power amplifiers. 9–12. 17 indexed citations

11.

Moon, J. S., M. Antcliffe, C. McGuire, et al.. (2012). Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection. IEEE Electron Device Letters. 33(10). 1357–1359. 37 indexed citations

12.

Moon, J. S., Daniel J. Curtis, Ming Hu, et al.. (2009). Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. IEEE Electron Device Letters. 30(6). 650–652. 265 indexed citations

13.

Gaskill, D. Kurt, Glenn G. Jernigan, Paul M. Campbell, et al.. (2009). Epitaxial Graphene Growth on SiC Wafers. ECS Transactions. 19(5). 117–124. 27 indexed citations

14.

Moon, J. S., Daniel J. Curtis, Ming Hu, et al.. (2009). Epitaxial graphene RF field-effect transistors. 195–196. 1 indexed citations

15.

Boutros, K. S., Shawn D. Burnham, D. Wong, et al.. (2009). Normally-off 5A/1100V GaN-on-silicon device for high voltage applications. 1–3. 30 indexed citations

16.

Moyer, H. P., J. N. Schulman, J.J. Lynch, et al.. (2008). W-Band Sb-Diode Detector MMICs for Passive Millimeter Wave Imaging. IEEE Microwave and Wireless Components Letters. 18(10). 686–688. 19 indexed citations

17.

Micovic, M., A. Kurdoghlian, H. P. Moyer, et al.. (2008). GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio. 1–4. 38 indexed citations

18.

Moon, J. S., D. Wong, Ming Hu, et al.. (2008). 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge. IEEE Electron Device Letters. 29(8). 834–837. 89 indexed citations

19.

Hashimoto, P., D. Wong, Ming Hu, et al.. (2007). 10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge. 33–34. 1 indexed citations

20.

McGuire, C., et al.. (2003). A GaAs MESFET large-signal circuit model for nonlinear analysis. 1053–1056.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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