Q. Fareed

1.7k total citations
53 papers, 1.4k citations indexed

About

Q. Fareed is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Q. Fareed has authored 53 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Condensed Matter Physics, 25 papers in Electronic, Optical and Magnetic Materials and 22 papers in Electrical and Electronic Engineering. Recurrent topics in Q. Fareed's work include GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (25 papers) and ZnO doping and properties (15 papers). Q. Fareed is often cited by papers focused on GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (25 papers) and ZnO doping and properties (15 papers). Q. Fareed collaborates with scholars based in United States, Lithuania and Japan. Q. Fareed's co-authors include Jianping Zhang, M. Asif Khan, V. Adivarahan, Asif Khan, Jinwei Yang, R. Gaška, M. S. Shur, G. Simin, M. Lachab and E. Kuokštis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

Q. Fareed

51 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Q. Fareed United States 20 1.3k 724 552 457 408 53 1.4k
S. B. Fleischer United States 12 1.0k 0.8× 583 0.8× 442 0.8× 446 1.0× 326 0.8× 20 1.4k
M. Schurman United States 21 1.4k 1.1× 675 0.9× 776 1.4× 626 1.4× 270 0.7× 62 1.7k
P. Prystawko Poland 22 1.3k 1.0× 481 0.7× 867 1.6× 478 1.0× 288 0.7× 152 1.6k
M. Siekacz Poland 24 1.4k 1.1× 456 0.6× 547 1.0× 499 1.1× 294 0.7× 113 1.6k
Manato Deki Japan 18 805 0.6× 427 0.6× 645 1.2× 261 0.6× 145 0.4× 70 1.0k
Hiroaki Ohta Japan 24 1.5k 1.2× 483 0.7× 674 1.2× 552 1.2× 319 0.8× 47 1.7k
S. Elhamri United States 19 716 0.6× 390 0.5× 1.0k 1.8× 487 1.1× 141 0.3× 83 1.6k
John C. Carrano United States 17 803 0.6× 559 0.8× 563 1.0× 285 0.6× 358 0.9× 37 1.2k
Troy J. Baker United States 14 1.5k 1.1× 629 0.9× 305 0.6× 731 1.6× 294 0.7× 21 1.6k
Yawara Kaneko Japan 11 662 0.5× 248 0.3× 234 0.4× 303 0.7× 190 0.5× 15 827

Countries citing papers authored by Q. Fareed

Since Specialization
Citations

This map shows the geographic impact of Q. Fareed's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Q. Fareed with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Q. Fareed more than expected).

Fields of papers citing papers by Q. Fareed

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Q. Fareed. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Q. Fareed. The network helps show where Q. Fareed may publish in the future.

Co-authorship network of co-authors of Q. Fareed

This figure shows the co-authorship network connecting the top 25 collaborators of Q. Fareed. A scholar is included among the top collaborators of Q. Fareed based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Q. Fareed. Q. Fareed is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lachab, M., et al.. (2014). Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate. Journal of Physics D Applied Physics. 47(13). 135108–135108. 19 indexed citations
2.
Lachab, M., Baowei Zhang, Iftikhar Ahmad, et al.. (2013). Enhancement of light extraction efficiency in sub-300nm nitride thin-film flip-chip light-emitting diodes. Solid-State Electronics. 89. 156–160. 16 indexed citations
3.
Balakrishnan, K., M. Lachab, Douglas A. Blom, et al.. (2011). MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters. physica status solidi (a). 208(12). 2724–2729. 23 indexed citations
4.
Lachab, M., Bin Zhang, Ahmad Heidari, et al.. (2011). 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes. Applied Physics Express. 4(3). 32102–32102. 40 indexed citations
5.
Fareed, Q., et al.. (2011). Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode. Journal of Electronic Materials. 40(4). 377–381. 16 indexed citations
6.
Balakrishnan, Krishnan, V. Adivarahan, Q. Fareed, et al.. (2010). First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells. Japanese Journal of Applied Physics. 49(4R). 40206–40206. 40 indexed citations
7.
Khan, Asif, et al.. (2009). Reliability issues in AlGaN based deep ultraviolet light emitting diodes. 89–93. 6 indexed citations
8.
Čiplys, D., M. S. Shur, R. Rimeika, et al.. (2006). Deep‐UV LED controlled AlGaN‐based SAW oscillator. physica status solidi (a). 203(7). 1834–1838. 25 indexed citations
9.
Čiplys, D., M. S. Shur, R. Rimeika, et al.. (2006). UV-LED controlled GaN-based SAW phase shifter. Electronics Letters. 42(21). 1254–1255. 2 indexed citations
10.
Mickevičius, J., Gintautas Tamulaitis, M. S. Shur, et al.. (2006). Saturated gain in GaN epilayers studied by variable stripe length technique. Journal of Applied Physics. 99(10). 5 indexed citations
11.
Shur, M. S., et al.. (2004). Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers. Applied Physics Letters. 85(12). 2157–2159. 10 indexed citations
12.
Aleksiejūnas, R., M. Sūdžius, V. Gudelis, et al.. (2003). Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2686–2690. 27 indexed citations
13.
Zhang, Jianping, Mikhail Gaevski, Q. Fareed, et al.. (2002). Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management. Applied Physics Letters. 80(19). 3542–3544. 163 indexed citations
14.
Zhang, Jianping, M. Asif Khan, Wenhong Sun, et al.. (2002). Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm. Applied Physics Letters. 81(23). 4392–4394. 112 indexed citations
15.
Kuokštis, E., Jianping Zhang, Q. Fareed, et al.. (2002). Near-band-edge photoluminescence of wurtzite-type AlN. Applied Physics Letters. 81(15). 2755–2757. 91 indexed citations
16.
Shatalov, M., A. Chitnis, V. Adivarahan, et al.. (2001). Band-edge luminescence in quaternary AlInGaN light-emitting diodes. Applied Physics Letters. 78(6). 817–819. 41 indexed citations
17.
Basak, Durga, et al.. (2000). Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(5). 2491–2494. 9 indexed citations
18.
Chung, Sung Hoon, M. Lachab, Tao Wang, et al.. (2000). Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 39(8R). 4749–4749. 15 indexed citations
19.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma. Japanese Journal of Applied Physics. 38(4S). 2646–2646. 17 indexed citations
20.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Selective Etching of GaN over AlxGa1-xN Using Reactive Ion Plasma of Cl2/CH4/Ar Gas Mixture. Japanese Journal of Applied Physics. 38(1R). 42–42. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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