Andrew Armstrong

5.7k citations

157 papers · 3.6k indexed · h-index 35

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 122
- GaN-based semiconductor devices and materials 122
Electronic, Optical and Magnetic Materials 68
- Ga2O3 and related materials 68

Co-authors: Andrew A. Allerman Mary H. Crawford Robert Kaplar Albert G. Baca E Douglas Steven A. Ringel Michael W. Moseley James S. Speck
Journals: Applied Physics Letters (31 papers)Journal of Applied Physics (16 papers)IEEE Electron Device Letters (7 papers)IEEE Transactions on Electron Devices (5 papers)ECS Journal of Solid State Science and Technology (4 papers)
Partner nations: United States United Kingdom South Korea

In The Last Decade

Andrew Armstrong

150 papers receiving 3.5k citations

Peers

Countries citing papers authored by Andrew Armstrong

Since Specialization

Citations

This map shows the geographic impact of Andrew Armstrong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrew Armstrong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrew Armstrong more than expected).

Fields of papers citing papers by Andrew Armstrong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrew Armstrong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrew Armstrong. The network helps show where Andrew Armstrong may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Andrew Armstrong, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Andrew Armstrong Line = papers co-authored together Andrew Armstrong links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors ArXiv.org ·Alick West, 美帆老木, Jerry W. Pratt, John Niroula, Pedro Rosado, Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan	2025	0
2	Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN Applied Physics Letters ·Pedro Rosado, Andrew A. Allerman, Chandan Joishi, José de Jesús Montes de Oca-Flores, JOHN W. BARNES, 幸次森戸, Brianna Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan	2025	6
3	Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts Advanced Materials Interfaces ·Brianna Klein, Andrew A. Allerman, Andrew Armstrong, N. Solovet, Justyna Żychowska, Pedro Rosado, Chandan Joishi, Quentin VerCetty, Siddharth Rajan	2024	4
4	Call to Action: Bolstering the Diminishing Pediatric Nursing Workforce Journal of Nursing Education ·Marti Rice, Tetiana Serediuk, Andrew Armstrong, Elizabeth Coleman, Saurabh Vijay, Hilary McPhee, F. Tecklenburg, Belete K. Mebratu, О В Богоявленская, Si Yuan Zhang	2024	2
5	Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs Applied Physics Letters ·Dara Carney-Nedelman, NATALIA KUZMINA, Marina Bergamin, Andrew Armstrong, Daniel Feezell	2023	13
6	Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3 Journal of Applied Physics ·Joe F. McGlone, Hemant Ghadi, Lingjian Kong, Andrew Armstrong, George R. Burns, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel	2023	27
7	Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes Journal of Applied Physics ·W.R. Wampler, Andrew Armstrong, György Vizkelethy	2022	3
8	Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions IEEE Transactions on Electron Devices ·Luke Yates, Brendan Gunning, Mary H. Crawford, Luiz Octávio Barros de Souza, Michael L. Smith, Kunio Kobayshi, Jeramy Ray Dickerson, Andrew Armstrong, Andrew Binder, Andrew A. Allerman, Robert Kaplar	2022	44
9	Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes IEEE Electron Device Letters ·Seungsup Lee, Andrew Armstrong, A. Alec Talin, Andrew A. Allerman, Mary H. Crawford, Gregory Pickrell, François Léonard	2021	2
10	Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching ACS Applied Materials & Interfaces ·Bingjun Li, Sizhen Wang, Mohsen Nami, Andrew Armstrong, Jung Han	2021	4
11	High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Patrick H. Carey, F. Ren, Andrew Armstrong, Brianna Klein, Andrew A. Allerman, E Douglas, Albert G. Baca, S. J. Pearton	2020	4
12	Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters ·James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew Armstrong, Brianna Klein, Anushka Bansal, A VanBrakel, Alexej Pogrebnyakov, Eric R. Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi	2019	37
13	Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures Applied Physics Express ·Zhibo Zhao, Akshay Singh, Jordan Chesin, Marina Bergamin, В.В. Михайлова, 姜召福, Andrew Armstrong, Kim Kisslinger, Eric A. Stach, Silvija Gradečak	2019	2
14	An Analysis of Bathymetric Sounding Density to Inform Ocean Mapping Strategies AGUFM ·J. D. Varner, Nadezhda Petrova Christova, Paul Johnson, Ilma Kurnia Isnani, Andrew Armstrong, Jennifer Jencks	2018	1
15	High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm IEEE Electron Device Letters ·Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong, Towhidur Razzak, 唐永忠, Siddhartha Sankar Baruah, Shahadat H. Sohel, Yuewei Zhang, Wu Lu, Aaron R. Arehart, Fatih Akyol, Siddharth Rajan	2017	51
16	Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes Applied Physics Letters ·M. King, Robert Kaplar, Jeramy Ray Dickerson, S. R. Lee, Andrew A. Allerman, Mary H. Crawford, A. J. Fischer, Noga Kurman, Jack Flicker, R. M. Fleming, I.C. Kizilyalli, Özgür Aktaş, Andrew Armstrong	2016	11
17	Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes Journal of Applied Physics ·Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	157
18	Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films OhioLink ETD Center (Ohio Library and Information Network) ·Andrew Armstrong	2006	9
19	Eos, Transactions, American Geophysical Union Volume 87, Number 16, 18 April 2006 Eos ·J. W. Geissman, त्रिभुवन Tribhuvan बरई Barai, A.F. Spilhaus, James V. Gardner, Larry A. Mayer, Andrew Armstrong, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown)	2006	1
20	Analysis of Data Relevant to Establishing Outer Limits of a Continental Shelf under Law of the Sea Article 76 The International Hydrographic Review ·Martin Jakobsson, Larry A. Mayer, Andrew Armstrong	2003	5

About Andrew Armstrong

Andrew Armstrong is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 157 papers that have together received 3.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (122 papers), Ga2O3 and related materials (68 papers), Semiconductor materials and devices (58 papers), Silicon Carbide Semiconductor Technologies (33 papers), ZnO doping and properties (25 papers), Semiconductor Quantum Structures and Devices (20 papers), Metal and Thin Film Mechanics (10 papers) and Photocathodes and Microchannel Plates (9 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (1.7k citations), Electrical and Electronic Engineering (1.6k citations), Materials Chemistry (1.1k citations) and Atomic and Molecular Physics, and Optics (575 citations). Andrew Armstrong has collaborated with scholars based in United States, United Kingdom and South Korea. Frequent co-authors include Andrew A. Allerman, Mary H. Crawford, Robert Kaplar, Albert G. Baca, E Douglas, Steven A. Ringel, Michael W. Moseley, James S. Speck, Aaron R. Arehart and Umesh K. Mishra. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters, IEEE Transactions on Electron Devices and ECS Journal of Solid State Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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