Éric Frayssinet

2.0k total citations
129 papers, 1.7k citations indexed

About

Éric Frayssinet is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Éric Frayssinet has authored 129 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 116 papers in Condensed Matter Physics, 70 papers in Electrical and Electronic Engineering and 53 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Éric Frayssinet's work include GaN-based semiconductor devices and materials (116 papers), Ga2O3 and related materials (52 papers) and Semiconductor materials and devices (46 papers). Éric Frayssinet is often cited by papers focused on GaN-based semiconductor devices and materials (116 papers), Ga2O3 and related materials (52 papers) and Semiconductor materials and devices (46 papers). Éric Frayssinet collaborates with scholars based in France, Poland and United States. Éric Frayssinet's co-authors include Y. Cordier, W. Knap, B. Beaumont, P. Gibart, F. Sèmond, B. Damilano, I. Grzegory, Sébastien Chenot, S. Porowski and M. S. Shur and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Éric Frayssinet

123 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Éric Frayssinet France 22 1.3k 778 647 619 525 129 1.7k
David F. Storm United States 27 1.5k 1.2× 913 1.2× 745 1.2× 579 0.9× 670 1.3× 94 2.0k
Anna Mogilatenko Germany 22 1.0k 0.8× 549 0.7× 625 1.0× 726 1.2× 340 0.6× 109 1.5k
A. V. Sakharov Russia 20 1.1k 0.8× 825 1.1× 480 0.7× 632 1.0× 978 1.9× 206 1.8k
H. Marchand United States 17 1.6k 1.3× 798 1.0× 818 1.3× 803 1.3× 621 1.2× 37 1.9k
E. Iliopoulos Greece 27 1.5k 1.2× 622 0.8× 823 1.3× 819 1.3× 530 1.0× 86 1.9k
M. Schurman United States 21 1.4k 1.1× 776 1.0× 675 1.0× 626 1.0× 514 1.0× 62 1.7k
P. Prystawko Poland 22 1.3k 1.0× 867 1.1× 481 0.7× 478 0.8× 719 1.4× 152 1.6k
Jeffrey J. Figiel United States 25 1.4k 1.1× 820 1.1× 720 1.1× 729 1.2× 659 1.3× 52 2.0k
Yoshihiro Ishitani Japan 24 1.5k 1.2× 433 0.6× 869 1.3× 854 1.4× 777 1.5× 128 1.8k
B. Łucznik Poland 26 2.0k 1.6× 949 1.2× 1.0k 1.6× 1.0k 1.7× 539 1.0× 114 2.3k

Countries citing papers authored by Éric Frayssinet

Since Specialization
Citations

This map shows the geographic impact of Éric Frayssinet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Éric Frayssinet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Éric Frayssinet more than expected).

Fields of papers citing papers by Éric Frayssinet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Éric Frayssinet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Éric Frayssinet. The network helps show where Éric Frayssinet may publish in the future.

Co-authorship network of co-authors of Éric Frayssinet

This figure shows the co-authorship network connecting the top 25 collaborators of Éric Frayssinet. A scholar is included among the top collaborators of Éric Frayssinet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Éric Frayssinet. Éric Frayssinet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sonneville, Camille, Pierre Brosselard, Éric Frayssinet, et al.. (2025). Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications. SPIRE - Sciences Po Institutional REpository. 11. 100100–100100.
2.
Alquier, Daniel, Camille Sonneville, Dominique Planson, et al.. (2025). New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations. Materials Science in Semiconductor Processing. 198. 109681–109681.
3.
Planson, Dominique, Christophe Raynaud, Camille Sonneville, et al.. (2024). Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates. Semiconductor Science and Technology. 39(6). 65016–65016. 1 indexed citations
4.
Frayssinet, Éric, et al.. (2024). Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs. Electronics. 13(12). 2350–2350. 1 indexed citations
5.
Brimont, Christelle, L. Doyennette, E. Cambril, et al.. (2024). Mode-locked waveguide polariton laser. Optica. 11(7). 962–962. 1 indexed citations
6.
Sonneville, Camille, Éric Frayssinet, Y. Cordier, et al.. (2024). Carrier density analysis in stressed n-doped GaN layers on sapphire. SPIRE - Sciences Po Institutional REpository. 1 indexed citations
7.
Bah, Micka, Daniel Alquier, Marie Lesecq, et al.. (2023). Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors. Materials Science in Semiconductor Processing. 171. 107977–107977. 2 indexed citations
8.
Sonneville, Camille, P. de Mierry, Éric Frayssinet, et al.. (2023). Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode. Crystals. 13(5). 713–713. 3 indexed citations
9.
Španková, M., Š. Chromík, Edmund Dobročka, et al.. (2023). Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition. Nanomaterials. 13(21). 2837–2837. 6 indexed citations
10.
Frayssinet, Éric, et al.. (2023). Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications. Microelectronic Engineering. 277. 112017–112017. 1 indexed citations
11.
Frayssinet, Éric, Priyanka Mondal, J. Treuttel, et al.. (2023). High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers. Journal of Electronic Materials. 52(8). 5249–5255. 2 indexed citations
12.
Chenot, Sébastien, J. Brault, M. Némoz, et al.. (2022). Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors. Journal of Crystal Growth. 593. 126779–126779. 1 indexed citations
13.
Raja, P. Vigneshwara, Christophe Raynaud, Camille Sonneville, et al.. (2022). Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes. Micro and Nanostructures. 172. 207433–207433. 1 indexed citations
14.
Fu, Wai Yuen, Éric Frayssinet, P. de Mierry, et al.. (2021). Whispering-gallery mode InGaN microdisks on GaN substrates. Optics Express. 29(14). 21280–21280. 9 indexed citations
15.
Frayssinet, Éric, F. Lecourt, N. Defrance, et al.. (2020). New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. Semiconductor Science and Technology. 36(3). 34002–34002. 2 indexed citations
16.
Bah, Micka, Marie Lesecq, N. Defrance, et al.. (2020). Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies. Scientific Reports. 10(1). 14166–14166. 25 indexed citations
17.
Chenot, Sébastien, J. Brault, B. Damilano, et al.. (2020). Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors. Semiconductor Science and Technology. 36(2). 24001–24001. 2 indexed citations
18.
Lesecq, Marie, et al.. (2019). 2 W mm −1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology. 34(12). 12LT01–12LT01. 9 indexed citations
19.
Rennesson, S., Éric Frayssinet, Ludovic Largeau, et al.. (2018). Proposition of a model elucidating the AlN-on-Si (111) microstructure. Journal of Applied Physics. 123(21). 16 indexed citations
20.
Cordier, Y., et al.. (2018). Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon. Journal of Crystal Growth. 507. 220–225. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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