Shiping Guo

1.7k total citations
48 papers, 1.4k citations indexed

About

Shiping Guo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shiping Guo has authored 48 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 32 papers in Electrical and Electronic Engineering and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shiping Guo's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (17 papers). Shiping Guo is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (17 papers). Shiping Guo collaborates with scholars based in United States, China and Saudi Arabia. Shiping Guo's co-authors include Xiang Gao, Patrick Fay, Tomás Palacios, Huili Grace Xing, David Kopp, Dong Seup Lee, Ronghua Wang, Gregory L. Snider, Debdeep Jena and Bo Song and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Shiping Guo

47 papers receiving 1.4k citations

Peers

Shiping Guo
J.A. Roussos United States
Z.-Q. Fang United States
D. Buttari United States
R. Coffie United States
Manato Deki Japan
A. T. Ping United States
Johji Nishio Japan
M. Gonschorek Switzerland
E. Haus United States
Tsutomu Uesugi Japan
J.A. Roussos United States
Shiping Guo
Citations per year, relative to Shiping Guo Shiping Guo (= 1×) peers J.A. Roussos

Countries citing papers authored by Shiping Guo

Since Specialization
Citations

This map shows the geographic impact of Shiping Guo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shiping Guo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shiping Guo more than expected).

Fields of papers citing papers by Shiping Guo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shiping Guo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shiping Guo. The network helps show where Shiping Guo may publish in the future.

Co-authorship network of co-authors of Shiping Guo

This figure shows the co-authorship network connecting the top 25 collaborators of Shiping Guo. A scholar is included among the top collaborators of Shiping Guo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shiping Guo. Shiping Guo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Li, Qiushuang Chen, Cong Chen, et al.. (2023). Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation. Semiconductor Science and Technology. 38(6). 64001–64001. 2 indexed citations
2.
Guo, Wei, Li Chen, Houqiang Xu, et al.. (2020). Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains. Photonics Research. 8(6). 812–812. 2 indexed citations
3.
Xu, Houqiang, Liang Li, Zhenhai Yang, et al.. (2019). Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate. Optics Express. 27(11). 16195–16195. 9 indexed citations
4.
Li, Junmei, Fanping Meng, Hongwei Li, et al.. (2017). Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure. IEEE Transactions on Electron Devices. 64(11). 4424–4429. 15 indexed citations
5.
Schuette, Michael L., A. Ketterson, Bo Song, et al.. (2013). Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz. IEEE Electron Device Letters. 34(6). 741–743. 92 indexed citations
6.
Song, Bo, Berardi Sensale‐Rodriguez, Ronghua Wang, et al.. (2012). Monolithically integrated E/D-mode InAlN HEMTs with &#x0192;<inf>t</inf>/&#x0192;<inf>max</inf> &#x003E; 200/220 GHz. 32. 1–2. 7 indexed citations
7.
Lee, Hyung‐Seok, Daniel Piedra, Min Sun, et al.. (2012). 3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier. IEEE Electron Device Letters. 33(7). 982–984. 126 indexed citations
8.
Wang, Ronghua, P. Saunier, Yong Tang, et al.. (2011). Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio. IEEE Electron Device Letters. 32(3). 309–311. 60 indexed citations
9.
Guo, Jia, Yu Cao, Chuanxin Lian, et al.. (2011). Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy. physica status solidi (a). 208(7). 1617–1619. 28 indexed citations
10.
Wang, Han, Jinwook Chung, Xiang Gao, Shiping Guo, & Tomás Palacios. (2010). High Performance InAlN/GaN HEMTs on SiC Substrate. 8 indexed citations
11.
Tang, Yong, P. Saunier, Ronghua Wang, et al.. (2010). High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications. 30.4.1–30.4.4. 27 indexed citations
12.
Wang, Ronghua, Tian Fang, Tom Zimmermann, et al.. (2010). High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes. 111. 129–130. 3 indexed citations
13.
Kumar, V., et al.. (2005). Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz. 61–62. 3 indexed citations
14.
Tserng, H.Q., L. Witkowski, P. Saunier, et al.. (2004). Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates. Electronics Letters. 40(24). 1547–1548. 19 indexed citations
15.
Kuskovsky, Igor L., et al.. (2002). Heavily p-type doped ZnSe using Te and N codoping. Journal of Electronic Materials. 31(7). 799–801. 4 indexed citations
16.
Kuskovsky, Igor L., Marjolein van der Voort, Irving P. Herman, et al.. (2002). Properties of MBE-Grown ZnBeSe: Study of Be Isoelectronic Traps and of Dopant Behavior. physica status solidi (b). 229(1). 239–243. 4 indexed citations
17.
Kuskovsky, Igor L., et al.. (2001). Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy. Journal of Applied Physics. 90(5). 2269–2272. 10 indexed citations
18.
Maksimov, O., Shiping Guo, Francisco Javier Ramírez Fernández, et al.. (2001). High reflectivity symmetrically strained ZnxCdyMg1−x−ySe-based distributed Bragg reflectors for current injection devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1479–1482. 1 indexed citations
19.
Guo, Shiping, et al.. (2000). p-type doping of (Zn,Mg,Cd)Se alloys using a radio frequency discharge nitrogen plasma source. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1534–1537. 8 indexed citations
20.
Guo, Shiping, Yuhao Luo, O. Maksimov, et al.. (2000). High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be–Zn co-irradiation. Journal of Crystal Growth. 208(1-4). 205–210. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J.A. Roussos Breakdown of academic impact, for papers by Z.-Q. Fang Breakdown of academic impact, for papers by D. Buttari Breakdown of academic impact, for papers by R. Coffie Breakdown of academic impact, for papers by Manato Deki Breakdown of academic impact, for papers by A. T. Ping Breakdown of academic impact, for papers by Johji Nishio Breakdown of academic impact, for papers by M. Gonschorek Breakdown of academic impact, for papers by E. Haus Breakdown of academic impact, for papers by Tsutomu Uesugi
Rankless by CCL
2026