P. Hashimoto

1.9k citations

44 papers · 1.6k indexed · h-index 25

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 43
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 11
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design 35
- Semiconductor materials and devices 9
- Silicon Carbide Semiconductor Technologies 7
- Advanced Power Amplifier Design 6
- Microwave Engineering and Waveguides 2
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 10
Materials Chemistry

Co-authors: M. Micovic Ming Hu Wei-Ting Wong A. Kurdoghlian P. J. Willadsen I. Milosavljevic L. McCray P. Janke
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Electronics Letters (7 papers)IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States

In The Last Decade

P. Hashimoto

44 papers receiving 1.5k citations

Peers

Countries citing papers authored by P. Hashimoto

Since Specialization

Citations

This map shows the geographic impact of P. Hashimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Hashimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Hashimoto more than expected).

Fields of papers citing papers by P. Hashimoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Hashimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Hashimoto. The network helps show where P. Hashimoto may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Hashimoto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Hashimoto Line = papers co-authored together P. Hashimoto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High efficiency X-band class-E GaN MMIC high-power amplifiers J. S. Moon,H. P. Moyer,Cesare Morandini,D. Wong,M. Antcliffe,Ming Hu,P. J. Willadsen,P. Hashimoto,C. McGuire,M. Micovic,Meredith Wetzel,D. H. Chow	2012	17
2	92–96 GHz GaN power amplifiers M. Micovic,A. Kurdoghlian,A. Margomenos,David F. Brown,K. Shinohara,Shawn D. Burnham,I. Milosavljevic,R. Bowen,DC Hinselwood,P. Hashimoto,Robert Grabar,C. Butler,A. Schmitz,P. J. Willadsen,D. H. Chow	2012	84
3	Reliability of T‐gate AlGaN/GaN HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Shawn D. Burnham,征悦村山,P. J. Willadsen,Nurul Izzah Abdullah,P. Hashimoto,Ming Hu,D. Wong,Mary Chen,M. Micovic	2011	13
4	High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al 2 O 3 Gate Insulators A. Corrion,K. Shinohara,D. Regan,I. Milosavljevic,P. Hashimoto,P. J. Willadsen,Helena Tuririday,Chabriat H,C. Butler,David F. Brown,Shawn D. Burnham,M. Micovic	2011	3
5	Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth IEEE Transactions on Electron Devices ·David F. Brown,K. Shinohara,Andrew Williams,I. Milosavljevic,Robert Grabar,P. Hashimoto,P. J. Willadsen,A. Schmitz,A. Corrion,Elena Moldovan,D. Regan,C. Butler,Shawn D. Burnham,M. Micovic	2011	27
6	Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ IEEE Electron Device Letters ·A. Corrion,K. Shinohara,D. Regan,I. Milosavljevic,P. Hashimoto,P. J. Willadsen,A. Schmitz,D. Wheeler,C. Butler,David F. Brown,Shawn D. Burnham,M. Micovic	2010	51
7	Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process H. P. Moyer,A. Kurdoghlian,M. Micovic,Abhinaya.A Abbirami.R.S,武雄,Dong Kuk Choi,Christine M. Engle,P. Hashimoto,A. Schmitz,I. Milosavljevic,P. J. Willadsen,Wei-Ting Wong,M. Antcliffe,Meredith Wetzel,Ming Hu	2008	13
8	GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio M. Micovic,A. Kurdoghlian,H. P. Moyer,P. Hashimoto,Ming Hu,M. Antcliffe,P. J. Willadsen,Wei-Ting Wong,R. Bowen,I. Milosavljevic,Opeyemi K Bakare,A. Schmitz,Meredith Wetzel,C. McGuire,B. Hughes,D. H. Chow	2008	38
9	55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge IEEE Electron Device Letters ·J. S. Moon,D. Wong,Ming Hu,P. Hashimoto,M. Antcliffe,C. McGuire,M. Micovic,Wen Hao	2008	89
10	GaN HFET for W-band Power Applications M. Micovic,A. Kurdoghlian,P. Hashimoto,Ming Hu,M. Antcliffe,P. J. Willadsen,Wei-Ting Wong,R. Bowen,I. Milosavljevic,A. Schmitz,Meredith Wetzel,D. H. Chow	2006	75
11	High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers Jeong‐Sun Moon,D. Wong,M. Antcliffe,P. Hashimoto,Ming Hu,P. J. Willadsen,M. Micovic,H. P. Moyer,A. Kurdoghlian,Cesare Morandini,Meredith Wetzel,R. Bowen	2006	8
12	GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications M. Micovic,P. Hashimoto,Ming Hu,H Rovida Camalia,Thaveesilp Subwattana,P. J. Willadsen,Wei-Ting Wong,Adam Conway,A. Kurdoghlian,Peter W. Deelman,Jeong‐Sun Moon,A. Schmitz,M.J. Delaney	2005	73
13	Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications IEEE Electron Device Letters ·S. Kamae,伊藤大介,D. Wong,I. Milosavljevic,Adam Conway,P. Hashimoto,Ming Hu,M. Antcliffe,M. Micovic	2005	103
14	GaN enhancement/depletion-mode FET logic for mixed signal applications Electronics Letters ·M. Micovic,Rutuja Mohan,Ming Hu,P. Hashimoto,P. J. Willadsen,I. Milosavljevic,A. Schmitz,M. Antcliffe,Feng Fei,S. Kamae,Wei-Ting Wong,D. H. Chow	2005	61
15	Wideband AlGaN/GaN HEMT MMIC low noise amplifier Grant Ellis,Jeong‐Sun Moon,D. Wong,M. Micovic,A. Kurdoghlian,P. Hashimoto,Ming Hu	2004	56
16	GaN HFET digital circuit technology for harsh environments Electronics Letters ·T. Hussain,M. Micovic,Rutuja Mohan,M.J. Delaney,D. H. Chow,A. Schmitz,P. Hashimoto,D. Wong,Jeong‐Sun Moon,Ming Hu,Thaveesilp Subwattana,Amin Niazi	2003	26
17	GaN HFET technology for RF applications C. Nguyen,M. Micovic,D. Wong,A. Kurdoghlian,P. Hashimoto,P. Janke,L. McCray,J. S. Moon	2002	5
18	GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mm Electronics Letters ·Jeong‐Sun Moon,M. Micovic,P. Janke,P. Hashimoto,Wei-Ting Wong,Zdeněk Talácko,L. McCray,A. Kurdoghlian,C. Nguyen	2001	55
19	Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10 GHz Electronics Letters ·Nam Nguyen,M. Micovic,Wei-Ting Wong,P. Hashimoto,P. Janke,М. Н. Мишанин,C. Nguyen	2000	39
20	GaN/AlGaN high electron mobility transistors withf _τ of 110 GHz Electronics Letters ·M. Micovic,Nam Nguyen,P. Janke,Wei-Ting Wong,P. Hashimoto,L. McCray,C. Nguyen	2000	94

About P. Hashimoto

P. Hashimoto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Automotive Engineering, having authored 44 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Radio Frequency Integrated Circuit Design (35 papers), Ga2O3 and related materials (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (9 papers), Silicon Carbide Semiconductor Technologies (7 papers), Advanced Power Amplifier Design (6 papers) and Microwave Engineering and Waveguides (2 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (472 citations), Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (418 citations) and Materials Chemistry (155 citations). P. Hashimoto has collaborated with scholars based in United States. Frequent co-authors include M. Micovic, Ming Hu, Wei-Ting Wong, A. Kurdoghlian, P. J. Willadsen, I. Milosavljevic, L. McCray, P. Janke, A. Schmitz and M. Antcliffe. Their work appears in journals such as Electronics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics and physica status solidi (a).

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