N. Fichtenbaum

1.9k total citations
34 papers, 1.6k citations indexed

About

N. Fichtenbaum is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, N. Fichtenbaum has authored 34 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in N. Fichtenbaum's work include GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (14 papers). N. Fichtenbaum is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (14 papers). N. Fichtenbaum collaborates with scholars based in United States, Australia and Italy. N. Fichtenbaum's co-authors include Umesh K. Mishra, S. Keller, Steven P. DenBaars, James S. Speck, David F. Brown, Rongming Chu, Feng Wu, Tom Mates, Jing Lu and Siddharth Rajan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

N. Fichtenbaum

34 papers receiving 1.6k citations

Peers

Countries citing papers authored by N. Fichtenbaum

Since Specialization

Citations

This map shows the geographic impact of N. Fichtenbaum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Fichtenbaum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Fichtenbaum more than expected).

Fields of papers citing papers by N. Fichtenbaum

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Fichtenbaum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Fichtenbaum. The network helps show where N. Fichtenbaum may publish in the future.

Co-authorship network of co-authors of N. Fichtenbaum

This figure shows the co-authorship network connecting the top 25 collaborators of N. Fichtenbaum. A scholar is included among the top collaborators of N. Fichtenbaum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Fichtenbaum. N. Fichtenbaum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	N-polar GaN epitaxy and high electron mobility transistors 2013 ·Semiconductor Science and Technology ·Man Hoi Wong, S. Keller, (unknown), (unknown), Seshadri Kolluri, David F. Brown, Jing Lu, N. Fichtenbaum, Elaheh Ahmadi, Uttam Singisetti, Alessandro Chini, Siddharth Rajan, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	190
2	Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors 2011 ·Applied Physics Letters ·Tania Roy, En Xia Zhang, Yevgeniy Puzyrev, Xiao Shen, Daniel M. Fleetwood, Ronald D. Schrimpf, (unknown), Rongming Chu, C. Poblenz, N. Fichtenbaum, Chang Soo Suh, Umesh K. Mishra, James S. Speck, Sokrates T. Pantelides	47
3	Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition 2008 ·Journal of Crystal Growth ·N. Fichtenbaum, Tom Mates, S. Keller, Steven P. DenBaars, Umesh K. Mishra	154
4	GaN vertical n‐p junctions prepared by Si ion implantation 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. Kočan, Gilberto A. Umana‐Membreno, (unknown), (unknown), N. Fichtenbaum, L. McCarthy, S. Keller, R. Menozzi, Umesh K. Mishra, Giacinta Parish, Brett Nener	3
5	Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), Yi Pei, (unknown), N. Fichtenbaum, S. Keller, Steven P. DenBaars, F. Calle, Umesh K. Mishra	3
6	Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors 2008 ·IEEE Electron Device Letters ·Yi Pei, Rongming Chu, L. Shen, N. Fichtenbaum, Z. Chen, David F. Brown, S. Keller, Steven P. DenBaars, Umesh K. Mishra	18
7	Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition 2008 ·Journal of Applied Physics ·S. Keller, Chang Soo Suh, (unknown), Rongming Chu, Siddharth Rajan, N. Fichtenbaum, (unknown), Steven P. DenBaars, James S. Speck, Umesh K. Mishra	81
8	V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band 2008 ·Rongming Chu, Likun Shen, N. Fichtenbaum, David F. Brown, Zhe Chen, S. Keller, Umesh K. Mishra	1
9	Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation 2007 ·IEEE MTT-S International Microwave Symposium digest ·L. Shen, Yi Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	10
10	MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures 2007 ·physica status solidi (b) ·N. Fichtenbaum, Carl J. Neufeld, (unknown), Yuan Wu, Man Hoi Wong, Marius Grundmann, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	5
11	Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells 2007 ·physica status solidi (b) ·S. Keller, N. Fichtenbaum, (unknown), Carl J. Neufeld, Aurélien David, Elison Matioli, Yuan Wu, Steven P. DenBaars, James S. Speck, Claude Weisbuch, Umesh K. Mishra	8
12	Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition 2007 ·Journal of Electronic Materials ·Gilberto A. Umana‐Membreno, Giacinta Parish, N. Fichtenbaum, S. Keller, Umesh K. Mishra, Brett Nener	36
13	Study of the n⁺ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance 2007 ·Japanese Journal of Applied Physics ·Yi Pei, Likun Shen, Tomás Palacios, N. Fichtenbaum, L. McCarthy, S. Keller, Steven P. DenBaars, Umesh K. Mishra	11
14	Growth and characterization of N-polar InGaN∕GaN multiquantum wells 2007 ·Applied Physics Letters ·S. Keller, N. Fichtenbaum, (unknown), James S. Speck, Steven P. DenBaars, Umesh K. Mishra	110
15	Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures 2007 ·Japanese Journal of Applied Physics ·N. Fichtenbaum, Carl J. Neufeld, (unknown), Yuan Wu, Man Hoi Wong, Michael J. Grundmann, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	16
16	Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition 2007 ·Applied Physics Letters ·N. Fichtenbaum, (unknown), Thomas E. Mates, (unknown), S. Keller, Steven P. DenBaars, Umesh K. Mishra	31
17	Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN 2007 ·IEEE Electron Device Letters ·Rongming Chu, Chang Soo Suh, Man Hoi Wong, N. Fichtenbaum, David F. Brown, L. McCarthy, S. Keller, Feng Wu, James S. Speck, Umesh K. Mishra	47
18	Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment 2006 ·IEEE Electron Device Letters ·L. Shen, Tomás Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	52
19	High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate 2006 ·Chang Soo Suh, Y. Dora, N. Fichtenbaum, L. McCarthy, S. Keller, Umesh K. Mishra	28
20	Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC 2006 ·Japanese Journal of Applied Physics ·S. Keller, N. Fichtenbaum, Feng Wu, Grace Lee, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	54

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