D. Wheeler

414 total citations
9 papers, 215 citations indexed

About

D. Wheeler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D. Wheeler has authored 9 papers receiving a total of 215 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in D. Wheeler's work include Semiconductor materials and devices (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and GaN-based semiconductor devices and materials (3 papers). D. Wheeler is often cited by papers focused on Semiconductor materials and devices (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and GaN-based semiconductor devices and materials (3 papers). D. Wheeler collaborates with scholars based in United States, Sweden and Austria. D. Wheeler's co-authors include Alan Seabaugh, K. Shinohara, D. Regan, P. J. Willadsen, M. Micovic, A. Schmitz, David F. Brown, Shawn D. Burnham, I. Milosavljevic and A. Corrion and has published in prestigious journals such as Journal of Crystal Growth, IEEE Electron Device Letters and Microelectronic Engineering.

In The Last Decade

D. Wheeler

9 papers receiving 201 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Wheeler United States	8	178	87	84	67	44	9	215
C. H. Chern United States	9	267 1.5×	97 1.1×	112 1.3×	71 1.1×	40 0.9×	15	310
A. F. Basile Canada	10	282 1.6×	100 1.1×	136 1.6×	48 0.7×	52 1.2×	30	318
Chad A. Stephenson United States	7	108 0.6×	50 0.6×	62 0.7×	48 0.7×	39 0.9×	19	156
Valerio Di Lecce Italy	11	278 1.6×	160 1.8×	88 1.0×	165 2.5×	33 0.8×	24	342
A. Sibaja-Hernandez Belgium	11	400 2.2×	133 1.5×	95 1.1×	38 0.6×	44 1.0×	47	437
Chien-I Kuo Taiwan	9	311 1.7×	73 0.8×	186 2.2×	50 0.7×	21 0.5×	36	347
D. Mahaveer Sathaiya Taiwan	7	236 1.3×	221 2.5×	96 1.1×	51 0.8×	80 1.8×	13	296
Jeremy J. M. Law United States	8	278 1.6×	34 0.4×	102 1.2×	75 1.1×	18 0.4×	22	299
V. A. Odnoblyudov United States	12	278 1.6×	197 2.3×	226 2.7×	86 1.3×	30 0.7×	30	339
Yasunori Tateno Japan	12	292 1.6×	244 2.8×	83 1.0×	55 0.8×	58 1.3×	28	338

Countries citing papers authored by D. Wheeler

Since Specialization

Citations

This map shows the geographic impact of D. Wheeler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Wheeler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Wheeler more than expected).

Fields of papers citing papers by D. Wheeler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Wheeler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Wheeler. The network helps show where D. Wheeler may publish in the future.

Co-authorship network of co-authors of D. Wheeler

This figure shows the co-authorship network connecting the top 25 collaborators of D. Wheeler. A scholar is included among the top collaborators of D. Wheeler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Wheeler. D. Wheeler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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9 of 9 papers shown

1.

Corrion, A., K. Shinohara, D. Regan, et al.. (2010). Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$. IEEE Electron Device Letters. 31(10). 1116–1118. 51 indexed citations

2.

Shinohara, K., A. Corrion, D. Regan, et al.. (2010). 220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic. 30.1.1–30.1.4. 42 indexed citations

3.

Moon, Jeong‐Sun, Daniel J. Curtis, Ming Hu, et al.. (2010). Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers. 209–210. 1 indexed citations

4.

Moon, Jeong‐Sun, et al.. (2010). Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers. IEEE Electron Device Letters. 29 indexed citations

5.

Wheeler, D., Lars‐Erik Wernersson, Lars Fröberg, et al.. (2009). Deposition of HfO2 on InAs by atomic-layer deposition. Microelectronic Engineering. 86(7-9). 1561–1563. 37 indexed citations

6.

Caroff, Philippe, D. Wheeler, Bernhard Mandl, et al.. (2008). InAs film grown on Si(111) by metal organic vapor phase epitaxy. Journal of Physics Conference Series. 100(4). 42017–42017. 9 indexed citations

7.

Jha, Smita, Xueyan Song, S.E. Babcock, et al.. (2008). Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 310(23). 4772–4775. 12 indexed citations

8.

Wang, Jinli, D. Wheeler, Yan Yan, et al.. (2003). Silicon tunnel diodes formed by proximity rapid thermal diffusion. 393–401. 10 indexed citations

9.

Wang, Jinli, D. Wheeler, Yongda Yan, et al.. (2003). Silicon tunnel diodes formed by proximity rapid thermal diffusion. IEEE Electron Device Letters. 24(2). 93–95. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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