Robert Grabar

678 total citations
20 papers, 567 citations indexed

About

Robert Grabar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Robert Grabar has authored 20 papers receiving a total of 567 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 19 papers in Electrical and Electronic Engineering and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Robert Grabar's work include GaN-based semiconductor devices and materials (20 papers), Radio Frequency Integrated Circuit Design (16 papers) and Advanced Power Amplifier Design (6 papers). Robert Grabar is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Radio Frequency Integrated Circuit Design (16 papers) and Advanced Power Amplifier Design (6 papers). Robert Grabar collaborates with scholars based in United States. Robert Grabar's co-authors include David F. Brown, M. Micovic, A. Kurdoghlian, K. Shinohara, Shawn D. Burnham, Helen Fung, C. Butler, I. Milosavljevic, P. J. Willadsen and A. Schmitz and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

Robert Grabar

20 papers receiving 536 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Robert Grabar United States	14	523	426	152	100	46	20	567
H. Shigematsu Japan	16	566 1.1×	243 0.6×	136 0.9×	60 0.6×	65 1.4×	30	606
A. Nanni Italy	11	552 1.1×	453 1.1×	165 1.1×	76 0.8×	48 1.0×	41	600
F. van Raay Germany	16	742 1.4×	488 1.1×	136 0.9×	75 0.8×	48 1.0×	88	792
P. Janke United States	12	434 0.8×	373 0.9×	162 1.1×	121 1.2×	26 0.6×	23	505
Michael Dammann Germany	8	524 1.0×	451 1.1×	204 1.3×	118 1.2×	13 0.3×	23	596
Martin Fagerlind Sweden	10	339 0.6×	317 0.7×	85 0.6×	93 0.9×	32 0.7×	20	377
Stephan Maroldt Germany	9	304 0.6×	219 0.5×	71 0.5×	69 0.7×	20 0.4×	28	348
H.Q. Tserng United States	15	701 1.3×	340 0.8×	320 2.1×	79 0.8×	39 0.8×	89	760
Hua-Quen Tserng United States	8	448 0.9×	396 0.9×	119 0.8×	93 0.9×	27 0.6×	16	501
R. Behtash Germany	12	378 0.7×	364 0.9×	89 0.6×	62 0.6×	31 0.7×	21	412

Countries citing papers authored by Robert Grabar

Since Specialization

Citations

This map shows the geographic impact of Robert Grabar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert Grabar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert Grabar more than expected).

Fields of papers citing papers by Robert Grabar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert Grabar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert Grabar. The network helps show where Robert Grabar may publish in the future.

Co-authorship network of co-authors of Robert Grabar

This figure shows the co-authorship network connecting the top 25 collaborators of Robert Grabar. A scholar is included among the top collaborators of Robert Grabar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robert Grabar. Robert Grabar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Grabar, Robert, Joel Wong, M. Antcliffe, et al.. (2020). High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz. Electronics Letters. 56(13). 678–680. 31 indexed citations

Moon, Jeong‐Sun, et al.. (2018). High‐speed FP GaN HEMT with f _T /f _MAX of 95/200 GHz. Electronics Letters. 54(10). 657–659. 12 indexed citations

Kurdoghlian, A., H. P. Moyer, Hasan Sharifi, et al.. (2017). First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems. 1126–1128. 36 indexed citations

Moon, Jeong‐Sun, et al.. (2017). 100 MHz–8 GHz linear distributed GaN MMIC power amplifier with improved power-added efficiency. 10 indexed citations

Burnham, Shawn D., et al.. (2017). Reliability Characteristics and Mechanisms of HRL’s T3 GaN Technology. IEEE Transactions on Semiconductor Manufacturing. 30(4). 480–485. 19 indexed citations

Moon, Jeong‐Sun, et al.. (2017). Multi-octave linear efficient GaN power amplifier. 253–255. 1 indexed citations

Brown, David F., et al.. (2016). Broadband GaN DHFET Traveling Wave Amplifiers with up to 120 GHz Bandwidth. 1–4. 22 indexed citations

Micovic, M., David F. Brown, D. Regan, et al.. (2016). Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology. 1–4. 39 indexed citations

Moon, J. S., Robert Grabar, David F. Brown, et al.. (2016). >70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning. IEEE Electron Device Letters. 37(3). 272–275. 37 indexed citations

10.

Moon, Jeong‐Sun, et al.. (2016). Wideband linear distributed GaN HEMT MMIC power amplifier with a record OIP3/Pdc. 5–7. 26 indexed citations

11.

Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2014). GaN Technology for E, W and G-Band Applications. 1–4. 80 indexed citations

12.

Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2014). W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology. 18 indexed citations

13.

Margomenos, A., Florian Herrault, M. Micovic, et al.. (2014). Wafer-level packaging method incorporating embedded thermal management for GaN-based RF front-ends. 31. 976–981. 4 indexed citations

14.

Brown, David F., K. Shinohara, A. Corrion, et al.. (2013). High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates. IEEE Electron Device Letters. 34(9). 1118–1120. 28 indexed citations

15.

Margomenos, A., M. Micovic, A. Kurdoghlian, et al.. (2013). X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management. 1–4. 10 indexed citations

16.

Margomenos, A., A. Kurdoghlian, M. Micovic, et al.. (2012). 70–105 GHz wideband GaN power amplifiers. European Microwave Integrated Circuit Conference. 199–202. 17 indexed citations

17.

Micovic, M., A. Kurdoghlian, A. Margomenos, et al.. (2012). 92–96 GHz GaN power amplifiers. 1–3. 84 indexed citations

18.

Margomenos, A., M. Micovic, A. Kurdoghlian, et al.. (2012). Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends. 995–998. 5 indexed citations

19.

Brown, David F., K. Shinohara, Andrew Williams, et al.. (2011). Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth. IEEE Transactions on Electron Devices. 58(4). 1063–1067. 27 indexed citations

20.

Brown, David F., Andrew Williams, K. Shinohara, et al.. (2011). W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE. 19.3.1–19.3.4. 61 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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