Yi Pei

1.4k total citations
57 papers, 1.2k citations indexed

About

Yi Pei is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yi Pei has authored 57 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Condensed Matter Physics, 52 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yi Pei's work include GaN-based semiconductor devices and materials (57 papers), Semiconductor materials and devices (31 papers) and Radio Frequency Integrated Circuit Design (20 papers). Yi Pei is often cited by papers focused on GaN-based semiconductor devices and materials (57 papers), Semiconductor materials and devices (31 papers) and Radio Frequency Integrated Circuit Design (20 papers). Yi Pei collaborates with scholars based in United States, China and United Kingdom. Yi Pei's co-authors include Umesh K. Mishra, Steven P. DenBaars, S. Keller, David F. Brown, James S. Speck, Rongming Chu, Martin Kuball, R. Simms, M. Ťapajna and Zhe Chen and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Yi Pei

55 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yi Pei United States	20	1.1k	883	448	290	230	57	1.2k
Matthew Guidry United States	20	1.1k 1.0×	831 0.9×	474 1.1×	341 1.2×	256 1.1×	57	1.2k
Brian Romanczyk United States	20	1.1k 1.0×	894 1.0×	482 1.1×	373 1.3×	282 1.2×	58	1.3k
Yoshiharu Takada Japan	14	1.3k 1.2×	1.1k 1.3×	599 1.3×	265 0.9×	266 1.2×	32	1.4k
Masahiko Kuraguchi Japan	14	1.3k 1.2×	1.1k 1.2×	610 1.4×	255 0.9×	268 1.2×	30	1.4k
Hirokuni Tokuda Japan	17	931 0.9×	750 0.8×	553 1.2×	187 0.6×	255 1.1×	71	1.1k
Minhan Mi China	19	936 0.9×	745 0.8×	430 1.0×	225 0.8×	181 0.8×	91	991
B.M. Green United States	8	1.1k 1.0×	882 1.0×	448 1.0×	265 0.9×	234 1.0×	11	1.2k
Muneyoshi Suita Japan	16	702 0.6×	557 0.6×	390 0.9×	210 0.7×	245 1.1×	38	840
Steven Wienecke United States	16	697 0.6×	508 0.6×	300 0.7×	210 0.7×	182 0.8×	28	758
A.P. Zhang United States	8	693 0.6×	549 0.6×	272 0.6×	253 0.9×	197 0.9×	12	791

Countries citing papers authored by Yi Pei

Since Specialization

Citations

This map shows the geographic impact of Yi Pei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yi Pei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yi Pei more than expected).

Fields of papers citing papers by Yi Pei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yi Pei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yi Pei. The network helps show where Yi Pei may publish in the future.

Co-authorship network of co-authors of Yi Pei

This figure shows the co-authorship network connecting the top 25 collaborators of Yi Pei. A scholar is included among the top collaborators of Yi Pei based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yi Pei. Yi Pei is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Haochen, Hui Zhang, Chengjie Zuo, et al.. (2025). Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications. Applied Physics Letters. 126(12).

Zhang, Haochen, Lei Yang, Xi Jin, et al.. (2024). Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network. IEEE Journal of Emerging and Selected Topics in Power Electronics. 12(6). 5661–5671. 5 indexed citations

Zhang, Haochen, Lei Yang, Chengjie Zuo, et al.. (2024). 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs. IEEE Electron Device Letters. 45(7). 1157–1160. 10 indexed citations

Deng, Kexin, Sen Huang, Xinhua Wang, et al.. (2024). Deep level transient spectroscopy: Tracing interface and bulk trap‐induced degradation in AlGaN/GaN‐heterostructure based devices. SHILAP Revista de lepidopterología. 1(3). 282–303. 1 indexed citations

Pei, Yi, et al.. (2023). Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs. Journal of Semiconductors. 44(8). 82802–82802.

Pei, Yi, et al.. (2020). Accurate Temperature Estimation for Each Gate of GaN HEMT With n-Gate Fingers. IEEE Transactions on Electron Devices. 67(9). 3577–3584. 9 indexed citations

Pei, Yi. (2019). GaN Technology for 5G Application. 1–4. 7 indexed citations

Li, Yang, et al.. (2017). AlGaN/GaN HEMTs large signal model considering nonlinear Cds. 4 indexed citations

Li, Lei, et al.. (2015). An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology. 2015 Asia-Pacific Microwave Conference (APMC). 1–3. 4 indexed citations

10.

Sasikumar, A., Aaron R. Arehart, M. F. Romero, et al.. (2013). Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy. Applied Physics Letters. 103(3). 49 indexed citations

11.

Ťapajna, M., R. Simms, Yi Pei, Umesh K. Mishra, & Martin Kuball. (2010). On the identification of trap location in AlGaN/GaN HEMTs during electrical stress. 92. 119–122. 2 indexed citations

12.

Pei, Yi, et al.. (2010). High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology. 2010 IEEE MTT-S International Microwave Symposium. 16. 513–516. 2 indexed citations

13.

Pei, Yi, et al.. (2010). A scalable EE_HEMT based large signal model for multi‐finger AlGaN/GaN HEMTs for linear and non‐linear circuit design. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2450–2454. 4 indexed citations

14.

Ťapajna, M., R. Simms, Mustapha Faqir, et al.. (2010). Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis. 152–155. 11 indexed citations

15.

Nidhi, Nidhi, Sansaptak Dasgupta, Yi Pei, et al.. (2010). N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications. IEEE Electron Device Letters. 31(12). 1437–1439. 14 indexed citations

16.

Pei, Yi, Siddharth Rajan, Masataka Higashiwaki, et al.. (2009). Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 30(4). 313–315. 31 indexed citations

17.

Roblin, Patrick, Andrew Malonis, Aaron R. Arehart, et al.. (2009). Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system. 1209–1212. 4 indexed citations

18.

Pei, Yi, et al.. (2008). Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs. 1063–1066. 19 indexed citations

19.

Chu, Rongming, C. Poblenz, Man Hoi Wong, et al.. (2008). Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF₄-Treatment. Applied Physics Express. 1. 61101–61101. 5 indexed citations

20.

Shen, L., Yi Pei, L. McCarthy, et al.. (2007). Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation. IEEE MTT-S International Microwave Symposium digest. 623–626. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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