Yi Pei

1.4k citations

57 papers · 1.2k indexed · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 57
- GaN-based semiconductor devices and materials 57
Electronic, Optical and Magnetic Materials 19
- Ga2O3 and related materials 19

Co-authors: Umesh K. Mishra (40 shared papers)Steven P. DenBaars (20 shared papers)S. Keller (19 shared papers)James S. Speck (11 shared papers)David F. Brown (9 shared papers)Rongming Chu (12 shared papers)Martin Kuball (5 shared papers)R. Simms (4 shared papers)
Journals: IEEE Electron Device Letters (11 papers)Applied Physics Letters (9 papers)IEEE Transactions on Electron Devices (4 papers)Japanese Journal of Applied Physics (2 papers)Solid-State Electronics (2 papers)
Partner nations: United States China United Kingdom

In The Last Decade

Yi Pei

55 papers receiving 1.1k citations

Peers

Countries citing papers authored by Yi Pei

Since Specialization

Citations

This map shows the geographic impact of Yi Pei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yi Pei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yi Pei more than expected).

Fields of papers citing papers by Yi Pei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yi Pei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yi Pei. The network helps show where Yi Pei may publish in the future.

Co-authors

The 25 scholars most cited alongside Yi Pei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yi Pei Line = papers co-authored together Yi Pei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 57 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method IEEE Transactions on Electron Devices ·Matteo Meneghini, N. Ronchi, Antonio Stocco, Gaudenzio Meneghesso, Umesh K. Mishra, Yi Pei, Enrico Zanoni	2011	134
2	Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress IEEE Electron Device Letters ·M. Ťapajna, R. Simms, Yi Pei, Umesh K. Mishra, Martin Kuball	2010	122
3	Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters ·Man Hoi Wong, Yi Pei, Tomás Palacios, Likun Shen, Arpan Chakraborty, L. McCarthy, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2007	66
4	Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics ·Aaron R. Arehart, A. Sasikumar, Siddharth Rajan, G. D. Via, Brian Poling, B. Winningham, Eric R. Heller, David F. Brown, Yi Pei, F. Recht, Umesh K. Mishra, Steven A. Ringel	2012	58
5	Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters ·A. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo, M. F. Romero, Yi Pei, David F. Brown, F. Recht, M.A. di Forte-Poisson, F. Calle, Marko J. Tadjer, S. Keller, Steven P. DenBaars, Umesh K. Mishra, Steven A. Ringel	2013	49
6	The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs IEEE Electron Device Letters ·R. Cuerdo, Yi Pei, Z. Chen, S. Keller, Steven P. DenBaars, F. Calle, Umesh K. Mishra	2009	49
7	Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates IEEE Electron Device Letters ·Yi Pei, Z. Chen, David F. Brown, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2009	46
8	Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics ·Yi Pei, Rongming Chu, N. Fichtenbaum, Zhe Chen, David F. Brown, Likun Shen, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2007	44
9	N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier IEEE Electron Device Letters ·Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2008	41
10	Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer Applied Physics Letters ·Z. Chen, Yi Pei, Scott Newman, Rongming Chu, David F. Brown, Roy B. Chung, S. Keller, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2009	36
11	A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters ·Masataka Higashiwaki, Zhe Chen, Rongming Chu, Yi Pei, S. Keller, Umesh K. Mishra, Nobumitsu Hirose, Toshiaki Matsui, Takashi Mimura	2009	36
12	Next generation defect characterization in nitride HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Aaron R. Arehart, Andrew Malonis, C. Poblenz, Yi Pei, James S. Speck, Umesh K. Mishra, Steven A. Ringel	2011	32
13	Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs IEEE Electron Device Letters ·Yi Pei, Siddharth Rajan, Masataka Higashiwaki, Zhe Chen, Steven P. DenBaars, Umesh K. Mishra	2009	31
14	High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation Applied Physics Letters ·Man Hoi Wong, Yi Pei, James S. Speck, Umesh K. Mishra	2009	30
15	Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Applied Physics Letters ·Z. Chen, Yi Pei, Scott Newman, David F. Brown, Roy B. Chung, S. Keller, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2009	27
16	Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters ·D. W. Cardwell, Aaron R. Arehart, C. Poblenz, Yi Pei, James S. Speck, Umesh K. Mishra, Steven A. Ringel, J. P. Pelz	2012	27
17	Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors IEEE Transactions on Electron Devices ·Masataka Higashiwaki, Yi Pei, Rongming Chu, Umesh K. Mishra	2011	26
18	RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate IEEE Electron Device Letters ·Seshadri Kolluri, Yi Pei, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2009	23
19	Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer IEEE Transactions on Microwave Theory and Techniques ·Chieh Yang, Patrick Roblin, Fabien de Groote, Steven A. Ringel, Siddharth Rajan, Jean Pierre Teyssier, C. Poblenz, Yi Pei, James S. Speck, Umesh K. Mishra	2010	21
20	Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications T. Palaciosa, Eric Snow, Yi Pei, A. Chakraborty, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2006	21

About Yi Pei

Yi Pei is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 57 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (57 papers), Semiconductor materials and devices (31 papers), Radio Frequency Integrated Circuit Design (20 papers), Ga2O3 and related materials (19 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor Quantum Structures and Devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and ZnO doping and properties (5 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (448 citations), Electrical and Electronic Engineering (883 citations), Atomic and Molecular Physics, and Optics (290 citations) and Materials Chemistry (230 citations). Yi Pei has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Umesh K. Mishra, Steven P. DenBaars, S. Keller, James S. Speck, David F. Brown, Rongming Chu, Martin Kuball, R. Simms, M. Ťapajna and Z. Chen. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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