C. Poblenz

2.6k total citations
56 papers, 2.2k citations indexed

About

C. Poblenz is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Poblenz has authored 56 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Condensed Matter Physics, 35 papers in Electrical and Electronic Engineering and 27 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Poblenz's work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (23 papers). C. Poblenz is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (27 papers) and Semiconductor materials and devices (23 papers). C. Poblenz collaborates with scholars based in United States, Japan and France. C. Poblenz's co-authors include James S. Speck, Umesh K. Mishra, Siddharth Rajan, Steven P. DenBaars, Patrick Waltereit, A. Chakraborty, A. Corrion, S. Keller, C. R. Elsass and Tomás Palacios and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

C. Poblenz

56 papers receiving 2.1k citations

Peers

C. Poblenz

CMP

EEE

EOMM

AMPO

C. R. Elsass United States

Michael D. Craven United States

C. J. Sun United States

B. El Jani Tunisia

E. Iliopoulos Greece

Hiroaki Ohta Japan

L. Eckey Germany

B. Goldenberg United States

Kazuyuki Chocho Japan

A. Usikov Russia

C. R. Elsass United States

C. Poblenz

1.8k ×0.9

CMP

702 ×0.5

EEE

907 ×1.0

EOMM

615 ×0.9

AMPO

774 ×1.3

Citations per year, relative to C. Poblenz C. Poblenz (= 1×) peers C. R. Elsass

Countries citing papers authored by C. Poblenz

Since Specialization

Citations

This map shows the geographic impact of C. Poblenz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Poblenz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Poblenz more than expected).

Fields of papers citing papers by C. Poblenz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Poblenz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Poblenz. The network helps show where C. Poblenz may publish in the future.

Co-authorship network of co-authors of C. Poblenz

This figure shows the co-authorship network connecting the top 25 collaborators of C. Poblenz. A scholar is included among the top collaborators of C. Poblenz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Poblenz. C. Poblenz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Raring, James W., Mathew C. Schmidt, C. Poblenz, et al.. (2011). High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7939. 79390Y–79390Y. 15 indexed citations

Raring, James W., C. Poblenz, Ben Li, et al.. (2010). State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7686. 76860L–76860L. 7 indexed citations

Arehart, Aaron R., C. Poblenz, James S. Speck, & Steven A. Ringel. (2010). Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy. Journal of Applied Physics. 107(5). 10 indexed citations

Arehart, Aaron R., et al.. (2010). Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy. Applied Physics Letters. 96(24). 26 indexed citations

Akopian, N., Alon Vardi, G. Bahir, et al.. (2009). Fermi edge singularity observed in GaN/AlGaN heterointerfaces. Applied Physics Letters. 94(22). 7 indexed citations

Roblin, Patrick, Andrew Malonis, Aaron R. Arehart, et al.. (2009). Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system. 1209–1212. 4 indexed citations

Chu, Rongming, C. Poblenz, Man Hoi Wong, et al.. (2008). Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF₄-Treatment. Applied Physics Express. 1. 61101–61101. 5 indexed citations

Corrion, A., C. Poblenz, Feng Wu, & James S. Speck. (2008). Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors. Journal of Applied Physics. 103(9). 44 indexed citations

Armstrong, Andrew, A. Corrion, C. Poblenz, et al.. (2008). Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy. Journal of Applied Physics. 103(6). 20 indexed citations

10.

Shen, L., Yi Pei, L. McCarthy, et al.. (2007). Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation. IEEE MTT-S International Microwave Symposium digest. 623–626. 10 indexed citations

11.

Poblenz, C., A. Corrion, Chang Soo Suh, et al.. (2007). Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz. IEEE Electron Device Letters. 28(11). 945–947. 26 indexed citations

12.

Shen, L., Tomás Palacios, C. Poblenz, et al.. (2006). Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment. IEEE Electron Device Letters. 27(4). 214–216. 52 indexed citations

13.

McCarthy, L., Siddharth Rajan, A. Chakraborty, et al.. (2006). Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature. IEEE Electron Device Letters. 27(4). 205–207. 71 indexed citations

14.

Poblenz, C., Patrick Waltereit, & James S. Speck. (2005). Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1379–1385. 46 indexed citations

15.

Poblenz, C., Patrick Waltereit, Siddharth Rajan, et al.. (2005). Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1562–1567. 47 indexed citations

16.

Poblenz, C., Patrick Waltereit, Siddharth Rajan, et al.. (2004). Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(3). 1145–1149. 150 indexed citations

17.

Miller, Eric J, D. M. Schaadt, Edward T. Yu, et al.. (2003). Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment. Applied Physics Letters. 82(8). 1293–1295. 44 indexed citations

18.

Sato, Hitoshi, Patrick Waltereit, Daniel S. Green, et al.. (2003). Blue light‐emitting diodes grown by plasma‐assisted molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2193–2197. 3 indexed citations

19.

Elsass, C. R., C. Poblenz, B. Heying, et al.. (2001). Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 233(4). 709–716. 16 indexed citations

20.

Elsass, C. R., Tom Mates, B. Heying, et al.. (2000). Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy. Applied Physics Letters. 77(20). 3167–3169. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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