C. Poblenz

2.6k citations

56 papers · 2.2k · h-index 27

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 56
- GaN-based semiconductor devices and materials 56
Electrical and Electronic Engineering 35
- Semiconductor materials and devices 23
- Radio Frequency Integrated Circuit Design 11

Co-authors: James S. Speck (53 shared papers)Umesh K. Mishra (31 shared papers)Siddharth Rajan (9 shared papers)Steven P. DenBaars (18 shared papers)Patrick Waltereit (9 shared papers)A. Chakraborty (3 shared papers)A. Corrion (12 shared papers)S. Keller (4 shared papers)
Journals: Applied Physics Letters (13 papers)IEEE Electron Device Letters (5 papers)Journal of Applied Physics (4 papers)Japanese Journal of Applied Physics (3 papers)Journal of Crystal Growth (3 papers)
Partner nations: United States Japan Israel

In The Last Decade

C. Poblenz

56 papers receiving 2.1k citations

Peers

Countries citing papers authored by C. Poblenz

Since Specialization

Citations

This map shows the geographic impact of C. Poblenz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Poblenz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Poblenz more than expected).

Fields of papers citing papers by C. Poblenz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Poblenz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Poblenz. The network helps show where C. Poblenz may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Poblenz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Poblenz Line = papers co-authored together C. Poblenz links everyone, so they are left out of the graph.

All Works

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#	Work
1	High-power AlGaN/GaN HEMTs for Ka-band applications IEEE Electron Device Letters ·Tomás Palacios, A. Chakraborty, Siddharth Rajan, C. Poblenz, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2005	404
2	Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters ·B. Heying, I. P. Smorchkova, C. Poblenz, C. R. Elsass, P. Fini, S. Den Baars, Umesh K. Mishra, James S. Speck	2000	164
3	Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. Poblenz, Patrick Waltereit, Siddharth Rajan, S. Heikman, Umesh K. Mishra, James S. Speck	2004	150
4	Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces Applied Physics Letters ·H. Zhang, Eric J Miller, Edward T. Yu, C. Poblenz, James S. Speck	2004	120
5	Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy Applied Physics Letters ·Aaron R. Arehart, A. Corrion, C. Poblenz, James S. Speck, Umesh K. Mishra, Steven A. Ringel	2008	83
6	Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE IEEE Electron Device Letters ·Siddharth Rajan, Patrick Waltereit, C. Poblenz, S. Heikman, D.S. Green, James S. Speck, Umesh K. Mishra	2004	83
7	Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope Journal of Applied Physics ·Eric J Miller, D. M. Schaadt, Edward T. Yu, C. Poblenz, C. R. Elsass, James S. Speck	2002	83
8	Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature IEEE Electron Device Letters ·F. Recht, L. McCarthy, Siddharth Rajan, A. Chakraborty, C. Poblenz, A. Corrion, James S. Speck, Umesh K. Mishra	2006	71
9	High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates Applied Physics Express ·James W. Raring, Mathew C. Schmidt, C. Poblenz, Yu‐Chia Chang, M.J. Mondry, Ben Li, Justin Iveland, Brianna Walters, Michael R. Krames, Richard R. Craig, Paul Rudy, James S. Speck, Steven P. DenBaars, Shuji Nakamura	2010	68
10	Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment IEEE Electron Device Letters ·L. Shen, Tomás Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2006	52
11	Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors Japanese Journal of Applied Physics ·Patrick Waltereit, C. Poblenz, Siddharth Rajan, Feng Wu, Umesh K. Mishra, James S. Speck	2004	48
12	Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Aaron R. Arehart, A. Corrion, C. Poblenz, James S. Speck, Umesh K. Mishra, Steven P. DenBaars, Steven A. Ringel	2008	47
13	Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. Poblenz, Patrick Waltereit, Siddharth Rajan, Umesh K. Mishra, James S. Speck, Ping-Chieh Chin, I. P. Smorchkova, B. Heying	2005	47
14	Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters ·Tania Roy, En Xia Zhang, Yevgeniy Puzyrev, Xiao Shen, Daniel M. Fleetwood, Ronald D. Schrimpf, Gregor Koblmüller, Rongming Chu, C. Poblenz, N. Fichtenbaum, Chang Soo Suh, Umesh K. Mishra, James S. Speck, Sokrates T. Pantelides	2011	47
15	Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy Applied Physics Letters ·C. R. Elsass, Tom Mates, B. Heying, C. Poblenz, P. Fini, P. M. Petroff, Steven P. DenBaars, James S. Speck	2000	46
16	Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. Poblenz, Patrick Waltereit, James S. Speck	2005	46
17	Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors Journal of Applied Physics ·A. Corrion, C. Poblenz, Feng Wu, James S. Speck	2008	44
18	Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment Applied Physics Letters ·Eric J Miller, D. M. Schaadt, Edward T. Yu, Patrick Waltereit, C. Poblenz, James S. Speck	2003	44
19	Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy Applied Physics Letters ·Andrew Armstrong, C. Poblenz, D. S. Green, Umesh K. Mishra, James S. Speck, Steven A. Ringel	2006	43
20	Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling Applied Physics Letters ·Eric J Miller, Edward T. Yu, C. Poblenz, C. R. Elsass, James S. Speck	2002	42

About C. Poblenz

C. Poblenz is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 56 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (27 papers), Semiconductor materials and devices (23 papers), Semiconductor Quantum Structures and Devices (16 papers), ZnO doping and properties (12 papers), Radio Frequency Integrated Circuit Design (11 papers), Acoustic Wave Resonator Technologies (4 papers) and Photocathodes and Microchannel Plates (3 papers). The work is most often cited by research in Condensed Matter Physics (2.0k citations), Electronic, Optical and Magnetic Materials (934 citations), Atomic and Molecular Physics, and Optics (723 citations), Electrical and Electronic Engineering (1.3k citations) and Materials Chemistry (599 citations). C. Poblenz has collaborated with scholars based in United States, Japan and Israel. Frequent co-authors include James S. Speck, Umesh K. Mishra, Siddharth Rajan, Steven P. DenBaars, Patrick Waltereit, A. Chakraborty, A. Corrion, S. Keller, Tomás Palacios and C. R. Elsass. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Japanese Journal of Applied Physics and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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C. Poblenz

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