A. T. Ping

1.7k citations

38 papers · 1.5k indexed · h-index 21

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 6
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 30
- Silicon Carbide Semiconductor Technologies 8
- Plasma Diagnostics and Applications 5
- Radio Frequency Integrated Circuit Design 3
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 6
Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 11

Co-authors: I. Adesida M. Asif Khan A. C. Schmitz Jinhong Yang Q. Chen Jinwei Yang M.A. Khan J. N. Kuznia
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Electronics Letters (12 papers)Journal of Electronic Materials (6 papers)Applied Physics Letters (3 papers)
Partner nations: United States United Kingdom

In The Last Decade

A. T. Ping

36 papers receiving 1.4k citations

Peers

Countries citing papers authored by A. T. Ping

Since Specialization

Citations

This map shows the geographic impact of A. T. Ping's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. T. Ping with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. T. Ping more than expected).

Fields of papers citing papers by A. T. Ping

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. T. Ping. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. T. Ping. The network helps show where A. T. Ping may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. T. Ping, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. T. Ping Line = papers co-authored together A. T. Ping links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High-Volume 0.25 μm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography Terence L. Perix,A. T. Ping,Husnul Khatimatus Zamiah,Girl Guide,E. V. Gayazova,Shao Q. Su,R. Ricketts,Dhadi S. Reddy	2009	1
2	High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates A. T. Ping,嘉信森,Jinwei Yang,M. Asif Khan,I. Adesida	2002	0
3	Low resistance Ti/Pt/Au ohmic contacts to p-type GaN Applied Physics Letters ·Ling Zhou,玉江山邨,A. T. Ping,I. Adesida,Jun Yang,Asif Khan	2000	75
4	Ti/Pt/Au ohmic contacts on p -type GaN/Al _x Ga _1- _x Nsuperlattices Electronics Letters ·Mutia Ayu Chusna,A. T. Ping,Farid Khan,A. Osinsky,I. Adesida	2000	5
5	Microwave noise performance of AlGaN/GaN HEMTs Electronics Letters ·A. T. Ping,E. L. Piner,Joan M. Redwing,M. Asif Khan,I. Adesida	2000	34
6	Dry and Wet Etching for Group III – Nitrides MRS Internet Journal of Nitride Semiconductor Research ·I. Adesida,C. Youtsey,A. T. Ping,Farid Khan,Lucia Romano,G. E. Bulman	1999	27
7	AlGaN/GaN heterostructure field-effect transistors AMS Acta (University of Bologna) ·P. Harston,A. T. Ping,Joan M. Redwing	1999	2
8	Gate recessing of GaN MESFETs using photoelectrochemicalwet etching Electronics Letters ·A. T. Ping,D. Selvanathan,C. Youtsey,E. L. Piner,Joan M. Redwing,I. Adesida	1999	13
9	Low-frequency noise in AlGaN-GaN doped-channel heterostructurefield effect transistors grown on insulating SiC substrates Electronics Letters ·D.V. Kuksenkov,久美子岸本,H. Temkin,R. Gaška,A. T. Ping,I. Adesida	1998	6
10	GaN heterostructure field effect transistors AMS Acta (University of Bologna) ·P. Harston,A. T. Ping	1998	1
11	DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates IEEE Electron Device Letters ·A. T. Ping,Q. Chen,Jinwei Yang,M.A. Khan,I. Adesida	1998	102
12	High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor IEEE Electron Device Letters ·Yoshiko Tanigawa,Jinwei Yang,R. Gaška,M.A. Khan,M. S. Shur,G.J. Sullivan,R. Roxburgh,Pilar Albors,A. T. Ping,I. Adesida	1998	82
13	Dry etching of using chemically assisted ion beam etching Semiconductor Science and Technology ·A. T. Ping,M. Asif Khan,I. Adesida	1997	9
14	High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substrates Electronics Letters ·Luiz Eduardo Das Neves Silva,Jinwei Yang,Marina Bellani,A. T. Ping,P. Harston	1997	35
15	Ohmic contacts to n-type GaN using Pd/Al metallization Journal of Electronic Materials ·A. T. Ping,M. Asif Khan,I. Adesida	1996	44
16	Characterisation of Pd Schottky barrier on n -typeGaN Electronics Letters ·A. T. Ping,A. C. Schmitz,M. Asif Khan,I. Adesida	1996	56
17	Schottky barrier properties of various metals on n-type GaN Semiconductor Science and Technology ·A. C. Schmitz,A. T. Ping,M. Asif Khan,Jeffrey Rubel,Jinhong Yang,I. Adesida	1996	161
18	Study of chemically assisted ion beam etching of GaN using HCl gas Applied Physics Letters ·A. T. Ping,I. Adesida,M. Asif Khan	1995	58
19	Chemically assisted ion beam etching of gallium nitride Journal of Electronic Materials ·A. T. Ping,C. Youtsey,I. Adesida,M. Asif Khan,J. N. Kuznia	1995	23
20	Characteristics of chemically assisted ion beam etching of gallium nitride Applied Physics Letters ·I. Adesida,A. T. Ping,C. Youtsey,T. A. Dow,M. Asif Khan,D. T. Olson,J. N. Kuznia	1994	67

About A. T. Ping

A. T. Ping is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 38 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (30 papers), Metal and Thin Film Mechanics (11 papers), Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and interfaces (6 papers), Ga2O3 and related materials (6 papers), Plasma Diagnostics and Applications (5 papers) and Radio Frequency Integrated Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (431 citations) and Electrical and Electronic Engineering (1.0k citations). A. T. Ping has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include I. Adesida, M. Asif Khan, A. C. Schmitz, Jinhong Yang, Q. Chen, Jinwei Yang, M. Asif Khan, M.A. Khan, J. N. Kuznia and C. Youtsey. Their work appears in journals such as Electronics Letters, Journal of Electronic Materials, Applied Physics Letters, Semiconductor Science and Technology and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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