P. Moll

663 total citations
5 papers, 59 citations indexed

About

P. Moll is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, P. Moll has authored 5 papers receiving a total of 59 indexed citations (citations by other indexed papers that have themselves been cited), including 5 papers in Electrical and Electronic Engineering, 2 papers in Electronic, Optical and Magnetic Materials and 1 paper in Biomedical Engineering. Recurrent topics in P. Moll's work include Semiconductor materials and devices (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Copper Interconnects and Reliability (2 papers). P. Moll is often cited by papers focused on Semiconductor materials and devices (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Copper Interconnects and Reliability (2 papers). P. Moll collaborates with scholars based in Germany. P. Moll's co-authors include Bernd Goebel, A. Birner, Stefan Slesazeck, T. Hecht, H. Reisinger, M. Kerber, D. Schumann, B. Sell, T. Pompl and Marcel Heller and has published in prestigious journals such as Journal of The Electrochemical Society and Microelectronic Engineering.

In The Last Decade

P. Moll

5 papers receiving 48 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Moll Germany	4	52	20	10	8	7	5	59
S. Mehta United States	5	79 1.5×	11 0.6×	16 1.6×	4 0.5×	10 1.4×	26	83
J. Kluth United States	5	55 1.1×	14 0.7×	6 0.6×	4 0.5×	8 1.1×	12	58
Dzmitry O. Dzibrou Netherlands	5	60 1.2×	30 1.5×	5 0.5×	29 3.6×	9 1.3×	8	74
J. Freestone United Kingdom	5	40 0.8×	38 1.9×	8 0.8×	6 0.8×	8 1.1×	6	63
F. Wacquant France	5	27 0.5×	12 0.6×	7 0.7×	19 2.4×	8 1.1×	12	43
R. Nagai Japan	7	108 2.1×	8 0.4×	7 0.7×	4 0.5×	6 0.9×	25	117
S. M. Jang Taiwan	4	65 1.3×	12 0.6×	10 1.0×	14 1.8×	12 1.7×	6	68
Wenju Zhou China	5	27 0.5×	24 1.2×	8 0.8×	8 1.0×	9 1.3×	9	48
Yugang Yu United States	5	64 1.2×	31 1.6×	11 1.1×	6 0.8×	8 1.1×	7	69
M. Inoue Japan	5	69 1.3×	20 1.0×	7 0.7×	13 1.6×	9 1.3×	12	85

Countries citing papers authored by P. Moll

Since Specialization

Citations

This map shows the geographic impact of P. Moll's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Moll with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Moll more than expected).

Fields of papers citing papers by P. Moll

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Moll. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Moll. The network helps show where P. Moll may publish in the future.

Co-authorship network of co-authors of P. Moll

This figure shows the co-authorship network connecting the top 25 collaborators of P. Moll. A scholar is included among the top collaborators of P. Moll based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Moll. P. Moll is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

5 of 5 papers shown

1.

Heller, Marcel, et al.. (2006). Double line shrink lithography at k1= 0.16. Microelectronic Engineering. 83(4-9). 730–733. 4 indexed citations

2.

Moll, P., et al.. (2005). Etch Characteristics of Al[sub 2]O[sub 3] in ICP and MERIE Plasma Etchers. Journal of The Electrochemical Society. 152(4). G271–G271. 25 indexed citations

3.

Goebel, Bernd, et al.. (2003). Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond. 275–278. 12 indexed citations

4.

Jacobs, W.P.J.H., et al.. (2003). A feature scale model for trench capacitor etch rate and profile. 90. 891–894. 1 indexed citations

5.

Gutsche, M., A. Birner, T. Hecht, et al.. (2002). Capacitance enhancement techniques for sub-100 nm trench DRAMs. 18.6.1–18.6.4. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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