Elke Erben

852 total citations
31 papers, 364 citations indexed

About

Elke Erben is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Elke Erben has authored 31 papers receiving a total of 364 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 5 papers in Materials Chemistry. Recurrent topics in Elke Erben's work include Semiconductor materials and devices (30 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Elke Erben is often cited by papers focused on Semiconductor materials and devices (30 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Elke Erben collaborates with scholars based in Germany, United States and Singapore. Elke Erben's co-authors include Wenke Weinreich, M. Lemberger, L. Wilde, Anton J. Bauer, Johannes Müller, U. Schröder, Johannes Heitmann, L. Oberbeck, Jonas Sundqvist and J. Heitmann and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Elke Erben

29 papers receiving 357 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Elke Erben Germany 12 347 170 44 31 12 31 364
Moon Sig Joo South Korea 10 375 1.1× 126 0.7× 28 0.6× 34 1.1× 11 0.9× 29 383
Woon-Il Choi South Korea 6 321 0.9× 193 1.1× 39 0.9× 24 0.8× 16 1.3× 14 382
M. Bude United States 4 392 1.1× 217 1.3× 55 1.3× 42 1.4× 12 1.0× 5 409
T.S. Jeon United States 11 517 1.5× 223 1.3× 53 1.2× 50 1.6× 9 0.8× 15 538
D. Hrunski Germany 9 337 1.0× 262 1.5× 49 1.1× 28 0.9× 24 2.0× 14 369
M. S. Joo Singapore 7 363 1.0× 168 1.0× 51 1.2× 66 2.1× 12 1.0× 13 400
Y. Ma United States 9 307 0.9× 147 0.9× 37 0.8× 37 1.2× 13 1.1× 17 320
Alex Demkov United States 7 260 0.7× 209 1.2× 37 0.8× 61 2.0× 26 2.2× 21 304
Bum Ki Moon Japan 8 164 0.5× 163 1.0× 53 1.2× 25 0.8× 23 1.9× 21 222
B. Kniknie Netherlands 11 420 1.2× 405 2.4× 58 1.3× 53 1.7× 22 1.8× 21 472

Countries citing papers authored by Elke Erben

Since Specialization
Citations

This map shows the geographic impact of Elke Erben's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Elke Erben with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Elke Erben more than expected).

Fields of papers citing papers by Elke Erben

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Elke Erben. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Elke Erben. The network helps show where Elke Erben may publish in the future.

Co-authorship network of co-authors of Elke Erben

This figure shows the co-authorship network connecting the top 25 collaborators of Elke Erben. A scholar is included among the top collaborators of Elke Erben based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Elke Erben. Elke Erben is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Watts, Josef, Kok Wai Chew, Steffen Lehmann, et al.. (2017). RF-pFET in fully depleted SOI demonstrates 420 GHz FT. 84–87. 6 indexed citations
2.
Triyoso, Dina H., et al.. (2017). The application of low energy ion scattering spectroscopy (LEIS) in sub 28‐nm CMOS technology. Surface and Interface Analysis. 49(12). 1175–1186. 8 indexed citations
3.
Leitsmann, R., et al.. (2017). Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration. IEEE Transactions on Electron Devices. 64(12). 5073–5080. 2 indexed citations
4.
5.
Drescher, Maximilian, Andreas Naumann, Jonas Sundqvist, et al.. (2015). Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(2). 10 indexed citations
6.
Müller, Johannes, P. Polakowski, Jan Paul, et al.. (2015). (Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory. ECS Transactions. 69(3). 85–95. 23 indexed citations
7.
Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2014). Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 75. 86–89. 3 indexed citations
8.
Hempel, Klaus, et al.. (2013). Impact of both metal composition and oxygen/nitrogen profiles on p-channel metal-oxide semiconductor transistor threshold voltage for gate last high-k metal gate. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(2). 1 indexed citations
9.
Weinreich, Wenke, L. Wilde, Johannes Müller, et al.. (2012). Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 47 indexed citations
10.
Erben, Elke, K. Hempel, Dina H. Triyoso, et al.. (2012). Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration. 173–174. 1 indexed citations
11.
Weinreich, Wenke, P. Polakowski, Maximilian Drescher, et al.. (2012). TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 27 indexed citations
12.
Jakschik, S., Elke Erben, I. Dirnstorfer, et al.. (2011). Dielectric Backside Passivation – Improvements by Dipole Optimization. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 2252–2255. 2 indexed citations
13.
Martin, Dominik, Matthias Grube, Wenke Weinreich, et al.. (2011). Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 12 indexed citations
14.
Zhou, Dayu, Uwe Schroeder, Jin Xu, et al.. (2010). Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors. Journal of Applied Physics. 108(12). 33 indexed citations
15.
Hofmann, Philip, Dayu Zhou, M. Kerber, et al.. (2009). First Insight Into the Lifetime Acceleration Model of High-$k$$\hbox{ZrO}_{2}/\hbox{SiO}_{2}/\hbox{ZrO}_{2}$ Stacks for Advanced DRAM Technology Nodes. IEEE Electron Device Letters. 30(4). 340–342. 13 indexed citations
16.
Weinreich, Wenke, R. Reiche, M. Lemberger, et al.. (2009). Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films. Microelectronic Engineering. 86(7-9). 1826–1829. 58 indexed citations
17.
Schroeder, Uwe, Wenke Weinreich, Elke Erben, et al.. (2009). Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO2- and ZrO2-based Capacitor Dielectrics. ECS Transactions. 25(4). 357–366. 10 indexed citations
18.
Frey, L., et al.. (2007). Tuning the dielectric properties of hafnium silicate films. Microelectronic Engineering. 84(12). 2883–2887. 10 indexed citations
19.
Heitmann, Johannes, et al.. (2006). HfAlOx and HfSiOx based dielectrics for future dram application. 217–223. 1 indexed citations
20.
Patz, Matthias, et al.. (2006). Influence of Process Parameters on Leakage Current of Metal-Organic based HfSiOx Dielectrics. ECS Transactions. 3(3). 37–40. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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