Steve Knebel

738 total citations
23 papers, 639 citations indexed

About

Steve Knebel is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Steve Knebel has authored 23 papers receiving a total of 639 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Steve Knebel's work include Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Steve Knebel is often cited by papers focused on Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Steve Knebel collaborates with scholars based in Germany, South Korea and Belgium. Steve Knebel's co-authors include Thomas Mikolajick, Uwe Schroeder, U. Schröder, Johannes Müller, Dayu Zhou, Ekaterina Yurchuk, Andrew Graham, Jonas Sundqvist, T. Melde and Michael Hoffmann and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nano Energy.

In The Last Decade

Steve Knebel

23 papers receiving 629 citations

Peers

Steve Knebel
Hyo Kyeom Kim South Korea
Mike Oertel Germany
Elke Erben Germany
А. V. Osadchy Russia
C. Calderón Colombia
Christos Ferekides United States
Jike Lyu Spain
Christian Schleich Austria
Shelby S. Fields United States
Yongling Ren Australia
Hyo Kyeom Kim South Korea
Steve Knebel
Citations per year, relative to Steve Knebel Steve Knebel (= 1×) peers Hyo Kyeom Kim

Countries citing papers authored by Steve Knebel

Since Specialization
Citations

This map shows the geographic impact of Steve Knebel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steve Knebel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steve Knebel more than expected).

Fields of papers citing papers by Steve Knebel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steve Knebel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steve Knebel. The network helps show where Steve Knebel may publish in the future.

Co-authorship network of co-authors of Steve Knebel

This figure shows the co-authorship network connecting the top 25 collaborators of Steve Knebel. A scholar is included among the top collaborators of Steve Knebel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steve Knebel. Steve Knebel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Pešić, Milan, Steve Knebel, Michael Hoffmann, et al.. (2016). How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories. 11.6.1–11.6.4. 51 indexed citations
3.
Pešić, Milan, Steve Knebel, Sebastian Schmelzer, et al.. (2016). Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes. Journal of Applied Physics. 119(6). 38 indexed citations
4.
Knebel, Steve, Milan Pešić, Hanjin Lim, et al.. (2015). Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications. Journal of Applied Physics. 117(22). 18 indexed citations
5.
Pešić, Milan, Steve Knebel, Hanjin Lim, et al.. (2015). Conduction barrier offset engineering for DRAM capacitor scaling. Solid-State Electronics. 115. 133–139. 40 indexed citations
6.
Knebel, Steve, et al.. (2015). Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation. IEEE Electron Device Letters. 36(5). 430–432. 2 indexed citations
7.
Knebel, Steve, et al.. (2014). Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability. 55. 5B.1.1–5B.1.6. 16 indexed citations
8.
Nadimi, Ebrahim, C. Radehaus, Michael Schreiber, et al.. (2014). The Degradation Process of High-<inline-formula> <tex-math notation="TeX">$k~{\rm SiO}_{2}/{\rm HfO}_{2}$ </tex-math></inline-formula> Gate-Stacks: A Combined Experimental and First Principles Investigation. IEEE Transactions on Electron Devices. 61(5). 1278–1283. 13 indexed citations
9.
Knebel, Steve, S. Mirabella, S. Gibilisco, et al.. (2013). Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis. Applied Physics A. 116(1). 233–241. 4 indexed citations
10.
Knebel, Steve, et al.. (2013). Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability. IEEE Transactions on Electron Devices. 60(7). 2368–2371. 20 indexed citations
11.
12.
Graham, Anthony, S. Jakschik, Steve Knebel, et al.. (2012). An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications. Journal of Applied Physics. 111(12). 124511–124511. 3 indexed citations
13.
Knebel, Steve, et al.. (2012). Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications. IEEE Electron Device Letters. 33(12). 1699–1701. 24 indexed citations
14.
Zhou, Dayu, Johannes Müller, Jin Xu, et al.. (2012). Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films. Applied Physics Letters. 100(8). 64 indexed citations
15.
Yurchuk, Ekaterina, Johannes Müller, Steve Knebel, et al.. (2012). Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films. Thin Solid Films. 533. 88–92. 163 indexed citations
16.
Knebel, Steve, et al.. (2012). OFF-state induced threshold voltage relaxation after PBTI stress. 95–98. 10 indexed citations
17.
Bracht, H., Steve Knebel, M. Posselt, et al.. (2011). Ion-beam mixing in crystalline and amorphous germanium isotope multilayers. Journal of Applied Physics. 110(9). 5 indexed citations
18.
Zhou, Dayu, Uwe Schroeder, Jin Xu, et al.. (2010). Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors. Journal of Applied Physics. 108(12). 33 indexed citations
19.
Knebel, Steve, et al.. (2010). Structural and electrical properties of sol–gel derived Ge nanocrystals in SiO2 films. Applied Physics A. 103(1). 149–158. 8 indexed citations
20.
Graham, Anthony, Karsten Richter, W. Weber, et al.. (2010). An investigation of the electrical properties of metal-insulator-silicon capacitors with pyrolytic carbon electrodes. Journal of Applied Physics. 108(10). 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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