M. Kerber

830 citations

62 papers · 607 indexed · h-index 15

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 53
- Advancements in Semiconductor Devices and Circuit Design 34
- Integrated Circuits and Semiconductor Failure Analysis 25
- Ferroelectric and Negative Capacitance Devices 13
- Advanced Memory and Neural Computing 8
- Electrostatic Discharge in Electronics 5
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 9
Materials Chemistry
- Electronic and Structural Properties of Oxides 5
Statistics, Probability and Uncertainty
Atomic and Molecular Physics, and Optics

Co-authors: T. Pompl A. Kerber Udo Schwalke I. Eisele A. Veloso G. Groeseneken L. Pantisano Uwe Schroeder
Cited by: Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Microelectronics Reliability (11 papers)IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (5 papers)
Partner nations: Germany Austria Japan

In The Last Decade

M. Kerber

59 papers receiving 579 citations

Peers

Countries citing papers authored by M. Kerber

Since Specialization

Citations

This map shows the geographic impact of M. Kerber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Kerber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Kerber more than expected).

Fields of papers citing papers by M. Kerber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Kerber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Kerber. The network helps show where M. Kerber may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Kerber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Kerber Line = papers co-authored together M. Kerber links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Reliability aspects of copper metallization and interconnect technology for power devices Microelectronics Reliability ·L. Fernández-Vega Sanz,Loreto ROMANOS,Jessica Chaves de Souza,H. Schulze,Nicolas Heuck,David L. Fleitz,Karsten Guth,Verônica Bertollo Rusciolelli,Joseph Freiherr von Eichendorff,Frank Umbach,M. Kerber	2016	15
2	First occurrence of western corn root worm beetles in the federal states Hesse and Rhineland-Palatinate (Germany), 2011 SHILAP Revista de lepidopterología ·OA Hauge,Oliver Martinez,Н.А. Марченко,Michael Lenz,丰昌吴,Н. Н. Муравьева,Eiichi Watanabe,M. Kerber	2014	1
3	Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors Journal of Applied Physics ·Dayu Zhou,Uwe Schroeder,Jin Xu,J. Heitmann,Gunther Jegert,Wenke Weinreich,M. Kerber,Steve Knebel,Elke Erben,Thomas Mikolajick	2010	33
4	First Insight Into the Lifetime Acceleration Model of High-$k$$\hbox{ZrO}_{2}/\hbox{SiO}_{2}/\hbox{ZrO}_{2}$ Stacks for Advanced DRAM Technology Nodes IEEE Electron Device Letters ·Retno Ramadhina,Philip Hofmann,Dayu Zhou,M. Kerber,J. Heitmann,Uwe Schroeder,Elke Erben,L. Oberbeck	2009	13
5	Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides Microelectronics Reliability ·T. Pompl,A. Kerber,W Schreck,M. Kerber	2006	10
6	Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress IEEE Electron Device Letters ·A. Kerber,T. Pompl,W Schreck,Sun Chun-hui,M. Kerber	2006	25
7	Fast wafer level data acquisition for reliability characterization of sub-100 nm CMOS technologies A. Kerber,M. Kerber	2005	12
8	WLR monitoring stresses and suitable test structures for future product reliability targets Andreas Martin,M. Kerber,Ram Prakash Yallavula	2003	0
9	A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology В.А. Кульбачинский,A. Felder,M. Kerber,H.-M. Rein,灵晓张	2003	1
10	Soft breakdown and hard breakdown in ultra-thin oxides Microelectronics Reliability ·T. Pompl,Clifford J. Engel,Nasser Naseer,M. Kerber	2001	22
11	Gate-Prior-To-Isolation Cmos-Technology with Through-The-Gate-Implanted Ultra-Thin Gate Oxides MRS Proceedings ·Udo Schwalke,Karen de Rosa Spierings,Anita Seto,A. Kornacki,M. Kerber	1999	1
12	Low-Cost CMOS Process with Complete Post-Gate Implantation Scheme European Solid-State Device Research Conference ·M. Kerber,Udo Schwalke,Robert Heinrich	1997	1
13	EXTIGATE: The ultimate process architecture for submicron CMOS technologies IEEE Transactions on Electron Devices ·Udo Schwalke,M. Kerber,Muhamad Azhari,J. S. Rogers	1997	14
14	A High Performance BICMOS Process Featuring 40 GHz/21 ps M. Kerber,E. Bertagnolli,R. Mahnkopf,Isabelle C. Chou a,A. Felder,H.-M. Rein,Mykyta Dmytrochenkov,A.K. Karelis	1992	6
15	Entirely gate-surrounded MOS capacitor to study the intrinsic oxide quality IEEE Transactions on Electron Devices ·M. Kerber	1992	4
16	A comprehensive method combining deep-depletion profiling and capacitance transients to evaluate energy and depth distribution of MOS bulk defects IEEE Transactions on Electron Devices ·M. Kerber	1992	1
17	Effect of oxidation processing on the energy distribution and charging time of radiation-induced interface traps Applied Physics Letters ·Udo Schwalke,M. Kerber	1991	3
18	Equilibrium controlled static C-V measurement Solid-State Electronics ·M. Kerber,Udo Schwalke	1991	7
19	Interface Degradation and Dielectric Breakdown of Thin Oxides Due to Homogeneous Charge Injection Reliability physics ·M. Kerber,Udo Schwalke	1989	10
20	Comparison of Methods Characterizing Time Dependent Dielectric Breakdown in Thin Oxide and Oxide-Nitride-Oxide Layers European Solid-State Device Research Conference ·Daniela Marques Nunes,M. Kerber,晶佐々木,A. Spitzer	1987	2

About M. Kerber

M. Kerber is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Bioengineering, Ceramics and Composites and Materials Chemistry, having authored 62 papers that have together received 607 indexed citations. Recurring topics across this work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers), Ferroelectric and Negative Capacitance Devices (13 papers), Copper Interconnects and Reliability (9 papers), Advanced Memory and Neural Computing (8 papers), Electrostatic Discharge in Electronics (5 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (590 citations), Electronic, Optical and Magnetic Materials (73 citations), Materials Chemistry (92 citations), Statistics, Probability and Uncertainty (6 citations) and Atomic and Molecular Physics, and Optics (25 citations). M. Kerber has collaborated with scholars based in Germany, Austria and Japan. Frequent co-authors include T. Pompl, A. Kerber, Udo Schwalke, I. Eisele, A. Veloso, G. Groeseneken, L. Pantisano, Uwe Schroeder, R. Duschl and Dayu Zhou. Their work appears in journals such as Microelectronics Reliability, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact