R. Duschl

410 total citations
26 papers, 293 citations indexed

About

R. Duschl is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Duschl has authored 26 papers receiving a total of 293 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Duschl's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Duschl is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Duschl collaborates with scholars based in Germany, Belgium and United States. R. Duschl's co-authors include K. Eberl, Oliver G. Schmidt, R.‐P. Vollertsen, E. Kasper, M. Kerber, A. Kerber, W. Prost, U. Auer, T. Pompl and F.-J. Tegude and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

R. Duschl

25 papers receiving 277 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Duschl Germany 10 274 146 61 38 7 26 293
E. Ungersboeck Austria 12 321 1.2× 84 0.6× 85 1.4× 95 2.5× 5 0.7× 27 366
J. P. Colonna France 9 186 0.7× 82 0.6× 94 1.5× 43 1.1× 9 1.3× 20 197
P.A. Clifton United Kingdom 9 392 1.4× 169 1.2× 69 1.1× 32 0.8× 7 1.0× 23 413
Daniel Pascal France 7 334 1.2× 194 1.3× 64 1.0× 56 1.5× 5 0.7× 10 344
Wei Yip Loh Singapore 9 332 1.2× 63 0.4× 68 1.1× 46 1.2× 18 2.6× 27 348
D. K. Sparacin United States 7 260 0.9× 134 0.9× 49 0.8× 42 1.1× 4 0.6× 15 274
B. Winstead United States 9 341 1.2× 86 0.6× 30 0.5× 42 1.1× 2 0.3× 24 358
M. Minondo France 8 235 0.9× 68 0.5× 33 0.5× 51 1.3× 9 1.3× 21 257
F. Leplingard Germany 12 278 1.0× 84 0.6× 48 0.8× 16 0.4× 4 0.6× 45 313
Koushi Ando Japan 9 313 1.1× 178 1.2× 55 0.9× 34 0.9× 8 1.1× 14 343

Countries citing papers authored by R. Duschl

Since Specialization
Citations

This map shows the geographic impact of R. Duschl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Duschl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Duschl more than expected).

Fields of papers citing papers by R. Duschl

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Duschl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Duschl. The network helps show where R. Duschl may publish in the future.

Co-authorship network of co-authors of R. Duschl

This figure shows the co-authorship network connecting the top 25 collaborators of R. Duschl. A scholar is included among the top collaborators of R. Duschl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Duschl. R. Duschl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Jakschik, S., T. Kauerauf, R. Degraeve, et al.. (2007). Influence of Stress-Induced Leakage Current on Reliability of $\hbox{HfSiO}_{x}$. IEEE Transactions on Device and Materials Reliability. 7(2). 310–314. 6 indexed citations
3.
Duschl, R., et al.. (2007). Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. Microelectronics Reliability. 47(4-5). 497–500. 10 indexed citations
4.
5.
Duschl, R. & R.‐P. Vollertsen. (2006). Voltage Acceleration of Oxide Breakdown in the sub-10 nm Fowler-Nordheim and Direct Tunneling Regime. 44–48. 10 indexed citations
6.
7.
Duschl, R., et al.. (2005). Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products. Microelectronics Reliability. 45(9-11). 1520–1525. 1 indexed citations
8.
Duschl, R. & R.‐P. Vollertsen. (2005). Is the power-law model applicable beyond the direct tunneling regime?. Microelectronics Reliability. 45(12). 1861–1867. 8 indexed citations
9.
Duschl, R., M. Kerber, Uwe Schroeder, et al.. (2005). Influence of gate material and stress voltage on post breakdown leakage current of high K dielectrics. 632–633. 1 indexed citations
10.
Kerber, M., R. Duschl, H. Reisinger, et al.. (2004). Influence of charge trapping on AC reliability of high-k dielectrics. 585–586. 6 indexed citations
11.
Prost, W., F.-J. Tegude, M. Stoffel, et al.. (2004). Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes. Journal of Applied Physics. 96(7). 3848–3851.
12.
Auer, U., et al.. (2001). Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes. IEEE Electron Device Letters. 22(5). 215–217. 26 indexed citations
13.
Eberl, K., R. Duschl, Oliver G. Schmidt, U. Denker, & R. J. Haug. (2001). Si-based resonant inter- and intraband tunneling diodes. Journal of Crystal Growth. 227-228. 770–776. 13 indexed citations
14.
Duschl, R., Oliver G. Schmidt, & K. Eberl. (2000). Room temperature I–V characteristics of // interband tunneling diodes. Physica E Low-dimensional Systems and Nanostructures. 7(3-4). 836–839. 4 indexed citations
15.
Eberl, K., et al.. (2000). Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes. Thin Solid Films. 369(1-2). 33–38. 32 indexed citations
16.
Duschl, R. & K. Eberl. (2000). Physics and applications of Si/SiGe/Si resonant interband tunneling diodes. Thin Solid Films. 380(1-2). 151–153. 39 indexed citations
17.
Duschl, R., et al.. (1999). High room temperature peak-to-valleycurrent ratio in Sibased Esaki diodes. Electronics Letters. 35(13). 1111–1112. 43 indexed citations
18.
Duschl, R., et al.. (1998). Epitaxy and in-situ reflectance difference spectroscopy of II–VI-semiconductor structures. Microelectronic Engineering. 43-44. 707–714. 1 indexed citations
19.
Duschl, R., et al.. (1998). Hole mobilities in pseudomorphic Si1−x−yGexCy alloy layers. Thin Solid Films. 336(1-2). 336–339. 3 indexed citations
20.
Duschl, R., et al.. (1997). In-situ reflectometry and RDS monitoring of atomic layer MBE of ZnSe and ZnTe on GaAs. Materials Science and Engineering B. 43(1-3). 33–37. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by E. Ungersboeck Breakdown of academic impact, for papers by J. P. Colonna Breakdown of academic impact, for papers by P.A. Clifton Breakdown of academic impact, for papers by Daniel Pascal Breakdown of academic impact, for papers by Wei Yip Loh Breakdown of academic impact, for papers by D. K. Sparacin Breakdown of academic impact, for papers by B. Winstead Breakdown of academic impact, for papers by M. Minondo Breakdown of academic impact, for papers by F. Leplingard Breakdown of academic impact, for papers by Koushi Ando
Rankless by CCL
2026