V.L. Rideout

5.3k total citations · 1 hit paper
25 papers, 3.5k citations indexed

About

V.L. Rideout is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, V.L. Rideout has authored 25 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in V.L. Rideout's work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor materials and interfaces (8 papers). V.L. Rideout is often cited by papers focused on Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor materials and interfaces (8 papers). V.L. Rideout collaborates with scholars based in United States. V.L. Rideout's co-authors include F.H. Gaensslen, A. LeBlanc, R.H. Dennard, E. Bassous, C.R. Crowell, E.J. Walker, W. P. Dumke, J. M. Woodall, V. J. Silvestri and C. L. Anderson and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Journal of The Electrochemical Society.

In The Last Decade

V.L. Rideout

25 papers receiving 3.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Design of ion-implanted MOSFET's with very small physical dimensions

1974 2.2k citations R.H. Dennard, F.H. Gaensslen et al. IEEE Journal of Solid-State Circuits profile →

Peers

Countries citing papers authored by V.L. Rideout

Since Specialization

Citations

This map shows the geographic impact of V.L. Rideout's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.L. Rideout with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.L. Rideout more than expected).

Fields of papers citing papers by V.L. Rideout

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.L. Rideout. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.L. Rideout. The network helps show where V.L. Rideout may publish in the future.

Co-authorship network of co-authors of V.L. Rideout

This figure shows the co-authorship network connecting the top 25 collaborators of V.L. Rideout. A scholar is included among the top collaborators of V.L. Rideout based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V.L. Rideout. V.L. Rideout is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions 1999 ·Proceedings of the IEEE ·R.H. Dennard, F.H. Gaensslen, (unknown), V.L. Rideout, E. Bassous, A. LeBlanc	81
2	MOSFET's with PolySilicon gates self-aligned to the field isolation and to the source and drain regions 1979 ·IEEE Transactions on Electron Devices ·V.L. Rideout, V. J. Silvestri	2
3	One-device cells for dynamic random-access memories: A tutorial 1979 ·IEEE Transactions on Electron Devices ·V.L. Rideout	34
4	Al Coverage of Surface Steps at SiO2 Insulated Polycrystalline Si Boundaries: Al Evaporation in Vacuum and Low Pressure Ar 1979 ·Journal of The Electrochemical Society ·V. J. Silvestri, V.L. Rideout, (unknown)	3
5	A review of the theory, technology and applications of metal-semiconductor rectifiers 1978 ·Thin Solid Films ·V.L. Rideout	83
6	Theory and applications of metal-semiconductor contacts 1977 ·Thin Solid Films ·V.L. Rideout	1
7	A one-device memory cell using a single layer of polysilicon and a self-registering metal-to-polysilicon contact 1977 ·V.L. Rideout, (unknown), A. Cramer	6
8	MOSFETs with polysilicon gates self-aligned to the field isolation and to the source/drain regions 1976 ·V.L. Rideout, V. J. Silvestri	5
9	Design and characterization of very small MOSFETs for low temperature operation 1975 ·V.L. Rideout, E.J. Walker	6
10	A review of the theory and technology for ohmic contacts to group III–V compound semiconductors 1975 ·Solid-State Electronics ·V.L. Rideout	259
11	Design of ion-implanted MOSFET's with very small physical dimensions breakdown → 1974 ·IEEE Journal of Solid-State Circuits ·R.H. Dennard, F.H. Gaensslen, (unknown), V.L. Rideout, E. Bassous, A. LeBlanc	2196
12	Dependence of barrier height on energy gap in Au n-type GaAs1−xPx Schottky diodes 1974 ·Solid-State Electronics ·V.L. Rideout	7
13	Ion implanted MOSFETs with very short channel lengths 1973 ·R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, A. LeBlanc	12
14	An Improved Polishing Technique for GaAs 1972 ·Journal of The Electrochemical Society ·V.L. Rideout	13
15	A convenient operational equivalent to the fowler photothreshold plot 1972 ·Surface Science ·C.R. Crowell, (unknown), C. L. Anderson, V.L. Rideout	14
16	Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts 1970 ·Solid-State Electronics ·V.L. Rideout, C.R. Crowell	99
17	THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS 1969 ·Applied Physics Letters ·C.R. Crowell, V.L. Rideout	17
18	Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers 1969 ·Solid-State Electronics ·C.R. Crowell, V.L. Rideout	337
19	PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES 1967 ·Applied Physics Letters ·V.L. Rideout, C.R. Crowell	15
20	Optical Constants of Evaporated Gold and Platinum Films on Potassium Tantalate 1966 ·Journal of the Optical Society of America ·V.L. Rideout, S. H. Wemple	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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