R. Mahnkopf

417 total citations
17 papers, 290 citations indexed

About

R. Mahnkopf is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, R. Mahnkopf has authored 17 papers receiving a total of 290 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 1 paper in Hardware and Architecture. Recurrent topics in R. Mahnkopf's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Radio Frequency Integrated Circuit Design (5 papers). R. Mahnkopf is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Radio Frequency Integrated Circuit Design (5 papers). R. Mahnkopf collaborates with scholars based in Germany, United States and Austria. R. Mahnkopf's co-authors include D. Schmitt‐Landsiedel, J. Berthold, Angada B. Sachid, Dinesh Kumar Sharma, V. Ramgopal Rao, Maryam Shojaei Baghini, S. Biesemans, C. Wann, Ki Jin Han and James A. Harrington and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Very Large Scale Integration (VLSI) Systems and Springer Link (Chiba Institute of Technology).

In The Last Decade

R. Mahnkopf

15 papers receiving 271 citations

Peers

R. Mahnkopf
X. Aragonés Spain
T. Sakata Japan
Josef Watts United States
Pramod Kolar United States
Uddalak Bhattacharya United States
E. Hamdy United States
J. Berthold Germany
G. Kitsukawa Japan
Yong-Gee Ng United States
J.J. Liaw Taiwan
X. Aragonés Spain
R. Mahnkopf
Citations per year, relative to R. Mahnkopf R. Mahnkopf (= 1×) peers X. Aragonés

Countries citing papers authored by R. Mahnkopf

Since Specialization
Citations

This map shows the geographic impact of R. Mahnkopf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Mahnkopf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Mahnkopf more than expected).

Fields of papers citing papers by R. Mahnkopf

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Mahnkopf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Mahnkopf. The network helps show where R. Mahnkopf may publish in the future.

Co-authorship network of co-authors of R. Mahnkopf

This figure shows the co-authorship network connecting the top 25 collaborators of R. Mahnkopf. A scholar is included among the top collaborators of R. Mahnkopf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Mahnkopf. R. Mahnkopf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Sachid, Angada B., et al.. (2008). Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?. 1–4. 63 indexed citations
2.
3.
Wann, C., James A. Harrington, S. Biesemans, et al.. (2002). CMOS with active well bias for low-power and RF/analog applications. 158–159. 33 indexed citations
4.
Lin, Chunxiang, S. Biesemans, L.K. Han, et al.. (2002). Hot carrier reliability for 0.13 μm CMOS technology with dual gate oxide thickness. 135–138. 13 indexed citations
5.
Biesemans, S., J. Heidenreich, V. McGahay, et al.. (2002). A modular 0.13 μm bulk CMOS technology for high performance and low power applications. 12–13. 21 indexed citations
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8.
Mahnkopf, R., et al.. (2002). A 47 GHz bipolar process with an ultra shallow ion implanted base of 35 nm. 821–824. 1 indexed citations
9.
Berthold, J., et al.. (1997). The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 5(4). 360–368. 128 indexed citations
10.
Koch, F., et al.. (1995). The Role of the Si-SiO2 (CVD) Interface in Degradation Effects for High-Speed Bipolar Transistors. MRS Proceedings. 378. 4 indexed citations
11.
Mahnkopf, R., et al.. (1994). Annealing of degraded npn-transistors-mechanisms and modeling. IEEE Transactions on Electron Devices. 41(4). 533–538. 8 indexed citations
12.
Treitinger, L., A. Felder, M. Kerber, et al.. (1993). Silicon bipolar technology and circuits for optical communications at data rates above 10 GBit/s. FF3–FF3. 2 indexed citations
13.
Kerber, M., et al.. (1992). A High Performance BICMOS Process Featuring 40 GHz/21 ps. 1992. 449–452. 6 indexed citations
14.
Meister, T.F., et al.. (1991). A 26ps Selective Epitaxial Bipolar Technology. 36. 67–68. 4 indexed citations
15.
Mahnkopf, R., et al.. (1988). Annealing of Hot-Carrier-Induced MOSFET Degradation. Springer Link (Chiba Institute of Technology). 1 indexed citations
16.
Mahnkopf, R., et al.. (1988). ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION. Le Journal de Physique Colloques. 49(C4). C4–771. 1 indexed citations
17.
Mahnkopf, R., et al.. (1988). A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF HOT CARRIER DAMAGE. Le Journal de Physique Colloques. 49(C4). C4–775. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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