F.H. Gaensslen

4.8k total citations · 1 hit paper
35 papers, 3.2k citations indexed

About

F.H. Gaensslen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Infectious Diseases. According to data from OpenAlex, F.H. Gaensslen has authored 35 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 0 papers in Infectious Diseases. Recurrent topics in F.H. Gaensslen's work include Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (32 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F.H. Gaensslen is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (32 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F.H. Gaensslen collaborates with scholars based in United States and Canada. F.H. Gaensslen's co-authors include V.L. Rideout, R.H. Dennard, A. LeBlanc, E. Bassous, R.C. Jaeger, E.J. Walker, H.N. Yu, L. Kuhn, Peter W. Cook and S.E. Laux and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

F.H. Gaensslen

35 papers receiving 2.9k citations

Hit Papers

1 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Design of ion-implanted MOSFET's with very small physical dimensions

1974 2.2k citations R.H. Dennard, F.H. Gaensslen et al. IEEE Journal of Solid-State Circuits profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F.H. Gaensslen United States	15	2.8k	457	307	305	273	35	3.2k
A. LeBlanc United States	7	2.0k 0.7×	418 0.9×	251 0.8×	286 0.9×	185 0.7×	9	2.4k
E. Bassous United States	16	2.6k 1.0×	440 1.0×	572 1.9×	304 1.0×	339 1.2×	28	3.2k
V.L. Rideout United States	14	3.0k 1.1×	431 0.9×	388 1.3×	289 0.9×	821 3.0×	25	3.5k
P. Olivo Italy	29	3.2k 1.2×	695 1.5×	142 0.5×	677 2.2×	290 1.1×	194	3.7k
M. Bohr United States	28	3.6k 1.3×	513 1.1×	569 1.9×	215 0.7×	344 1.3×	51	4.0k
Tohru Ishihara Japan	20	1.2k 0.4×	1.1k 2.3×	240 0.8×	525 1.7×	113 0.4×	186	2.1k
Sung-Mo Kang United States	26	2.8k 1.0×	427 0.9×	382 1.2×	245 0.8×	79 0.3×	129	3.0k
V. Natarajan India	24	1.7k 0.6×	813 1.8×	492 1.6×	243 0.8×	126 0.5×	112	2.2k
Samuel H. Fuller United States	16	561 0.2×	423 0.9×	237 0.8×	454 1.5×	89 0.3×	55	1.5k
Hirotaka Tamura Japan	23	1.6k 0.6×	177 0.4×	547 1.8×	137 0.4×	212 0.8×	149	2.2k

Countries citing papers authored by F.H. Gaensslen

Since Specialization

Citations

This map shows the geographic impact of F.H. Gaensslen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.H. Gaensslen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.H. Gaensslen more than expected).

Fields of papers citing papers by F.H. Gaensslen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.H. Gaensslen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.H. Gaensslen. The network helps show where F.H. Gaensslen may publish in the future.

Co-authorship network of co-authors of F.H. Gaensslen

This figure shows the co-authorship network connecting the top 25 collaborators of F.H. Gaensslen. A scholar is included among the top collaborators of F.H. Gaensslen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.H. Gaensslen. F.H. Gaensslen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Dennard, R.H., et al.. (2007). Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions. 12(1). 38–50. 76 indexed citations

2.

Dennard, R.H., et al.. (1999). Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions. Proceedings of the IEEE. 87(4). 668–678. 81 indexed citations

3.

Gaensslen, F.H. & R.C. Jaeger. (1990). Low Temperature Microelectronics. 8 indexed citations

4.

Gaensslen, F.H., et al.. (1987). Foreword. IEEE Transactions on Electron Devices. 34(1). 1–3. 10 indexed citations

5.

Laux, S.E. & F.H. Gaensslen. (1987). A study of channel avalanche breakdown in scaled n-MOSFET's. IEEE Transactions on Electron Devices. 34(5). 1066–1073. 23 indexed citations

6.

Gaensslen, F.H.. (1986). Liquid nitrogen cooled CMOS. 226–227. 1 indexed citations

7.

Chamberlain, S.G., A. Husain, & F.H. Gaensslen. (1984). Nonuniform displacement of MOSFET channel pinchoff. IEEE Journal of Solid-State Circuits. 19(1). 118–122. 1 indexed citations

8.

Laux, S.E. & F.H. Gaensslen. (1984). A study of avalanche breakdown in scaled n-MOSFETs. 84–87. 4 indexed citations

9.

Jaeger, R.C. & F.H. Gaensslen. (1984). Anomalous MOS capacitance behavior in depletion-mode structures. IEEE Transactions on Electron Devices. 31(12). 1916–1918. 1 indexed citations

10.

Jaeger, R.C., F.H. Gaensslen, & S. E. Diehl. (1983). An Efficient Numerical Algorithm for Simulation of MOS Capacitance. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2(2). 111–116. 16 indexed citations

11.

Jaeger, R.C., S. E. Diehl, & F.H. Gaensslen. (1982). Numerical simulation of MOS capacitance for a wide range of temperatures, impurity profiles and surface state densities. 27. 14–15. 4 indexed citations

12.

Chamberlain, S.G., A. Husain, & F.H. Gaensslen. (1982). Nonuniform displacement of MOSFET channel pinchoff. 745–748. 2 indexed citations

13.

Gaensslen, F.H. & R.C. Jaeger. (1981). Behavior of electrically small depletion mode MOSFETs at low temperature. Solid-State Electronics. 24(3). 215–220. 12 indexed citations

14.

Jaeger, R.C. & F.H. Gaensslen. (1980). Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior. IEEE Transactions on Electron Devices. 27(5). 914–920. 78 indexed citations

15.

Gaensslen, F.H. & R.C. Jaeger. (1979). Temperature dependent threshold behavior of depletion mode MOSFETs. Solid-State Electronics. 22(4). 423–430. 67 indexed citations

16.

Jaeger, R.C. & F.H. Gaensslen. (1979). Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices. IEEE Journal of Solid-State Circuits. 14(2). 423–429. 8 indexed citations

17.

Dennard, R.H., F.H. Gaensslen, E.J. Walker, & Peter W. Cook. (1979). 1 µm MOSFET VLSI technology: Part II—Device designs and characteristics for high-performance logic applications. IEEE Transactions on Electron Devices. 26(4). 325–333. 64 indexed citations

18.

Dennard, R.H., et al.. (1974). Design of ion-implanted MOSFET's with very small physical dimensions. IEEE Journal of Solid-State Circuits. 9(5). 256–268. 2196 indexed citations breakdown →

19.

Rideout, V.L., F.H. Gaensslen, & A. LeBlanc. (1973). Device design considerations for ion implanted MOSFETs. 148–151. 7 indexed citations

20.

Gaensslen, F.H.. (1972). Low power MOSFET memory cells using Schottky-barrier diodes. 50–52. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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