D. Dobuzinsky

413 total citations
17 papers, 264 citations indexed

About

D. Dobuzinsky is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, D. Dobuzinsky has authored 17 papers receiving a total of 264 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 3 papers in Biomedical Engineering. Recurrent topics in D. Dobuzinsky's work include Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). D. Dobuzinsky is often cited by papers focused on Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). D. Dobuzinsky collaborates with scholars based in United States, Germany and Austria. D. Dobuzinsky's co-authors include S. Nguyen, D. Harmon, S. R. Stiffler, M. Gibson, D. Döpp, Wilfried Haensch, A. Majumdar, Arvind Kumar, Steven J. Koester and J. Holt and has published in prestigious journals such as Journal of The Electrochemical Society, Thin Solid Films and IEEE Electron Device Letters.

In The Last Decade

D. Dobuzinsky

15 papers receiving 250 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Dobuzinsky United States 7 238 95 71 49 46 17 264
D. Louis France 11 269 1.1× 102 1.1× 47 0.7× 61 1.2× 36 0.8× 28 295
Yong Kong Siew Belgium 9 204 0.9× 125 1.3× 50 0.7× 42 0.9× 30 0.7× 25 246
Tomo Ueno Japan 11 288 1.2× 61 0.6× 217 3.1× 54 1.1× 20 0.4× 36 358
Ennis T. Ogawa United States 10 303 1.3× 263 2.8× 49 0.7× 49 1.0× 67 1.5× 20 358
L.J. Tang Singapore 11 349 1.5× 89 0.9× 172 2.4× 103 2.1× 42 0.9× 32 434
T. Conard Belgium 6 346 1.5× 84 0.9× 192 2.7× 20 0.4× 32 0.7× 19 390
В. С. Просолович Belarus 8 108 0.5× 26 0.3× 81 1.1× 34 0.7× 35 0.8× 65 196
Efrain Altamirano Sánchez Belgium 9 297 1.2× 50 0.5× 80 1.1× 72 1.5× 23 0.5× 59 318
S. G. Malhotra United States 8 230 1.0× 194 2.0× 103 1.5× 75 1.5× 129 2.8× 18 367
S. Marcus United States 11 345 1.4× 70 0.7× 136 1.9× 14 0.3× 79 1.7× 18 361

Countries citing papers authored by D. Dobuzinsky

Since Specialization
Citations

This map shows the geographic impact of D. Dobuzinsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Dobuzinsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Dobuzinsky more than expected).

Fields of papers citing papers by D. Dobuzinsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Dobuzinsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Dobuzinsky. The network helps show where D. Dobuzinsky may publish in the future.

Co-authorship network of co-authors of D. Dobuzinsky

This figure shows the co-authorship network connecting the top 25 collaborators of D. Dobuzinsky. A scholar is included among the top collaborators of D. Dobuzinsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Dobuzinsky. D. Dobuzinsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Majumdar, A., Xinlin Wang, Arvind Kumar, et al.. (2009). Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs. IEEE Electron Device Letters. 30(4). 413–415. 31 indexed citations
2.
Doris, B., B.P. Linder, Vijay Narayanan, et al.. (2005). Ultra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack. 101–102.
3.
4.
Divakaruni, R., C. Radens, Michael Belyansky, et al.. (2004). Technologies for scaling vertical transistor DRAM cells to 70 nm. 59–60. 3 indexed citations
5.
Gambino, Jeff, L. A. Clevenger, G. Costrini, et al.. (2003). Cleans for Al vias in a 0.175 μm dual damascene process. 96 12. 206–208.
6.
Dobuzinsky, D., et al.. (2002). High yielding self-aligned contact process for a 0.150-μm DRAM technology. IEEE Transactions on Semiconductor Manufacturing. 15(2). 223–228. 1 indexed citations
7.
Dobuzinsky, D., et al.. (2002). Dielectric anti-reflection coating application in a 0.175 μm dual-damascene process. 87–89. 3 indexed citations
8.
Schnabel, R., L. A. Clevenger, G. Costrini, et al.. (2000). Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond (invited). Microelectronic Engineering. 50(1-4). 265–270. 5 indexed citations
9.
Schnabel, R., G. Bronner, L. A. Clevenger, et al.. (1999). Slotted vias for dual damascene interconnects in 1 Gb DRAMs. 43–44. 2 indexed citations
10.
Nguyen, S., et al.. (1998). Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures. Microelectronics Reliability. 38(1). 81–85. 1 indexed citations
11.
Schnabel, R., et al.. (1997). Dry etch challenges of 0.25 μm dual damascene structures. Microelectronic Engineering. 37-38. 59–65. 12 indexed citations
12.
Azuma, Tamiko, et al.. (1996). Impact of reduced resist thickness on deep ultraviolet lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 4246–4251. 11 indexed citations
13.
Nguyen, S., et al.. (1995). CVD of fluorosilicate glass for ULSI applications. Thin Solid Films. 270(1-2). 503–507. 53 indexed citations
14.
Nguyen, S., et al.. (1991). Substrate Trenching Mechanism during Plasma and Magnetically Enhanced Polysilicon Etching. Journal of The Electrochemical Society. 138(4). 1112–1117. 39 indexed citations
15.
Nguyen, S., et al.. (1991). Evidence of Oscillating Oxide Growth Mechanism during Oxygen Plasma Oxidation of Silicon. MRS Proceedings. 223. 1 indexed citations
16.
Nguyen, S., et al.. (1990). Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films. Journal of The Electrochemical Society. 137(7). 2209–2215. 77 indexed citations
17.
Nguyen, S., et al.. (1990). Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films. Thin Solid Films. 193-194. 595–609. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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