P. Ronsheim

946 total citations
33 papers, 446 citations indexed

About

P. Ronsheim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Ronsheim has authored 33 papers receiving a total of 446 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in P. Ronsheim's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). P. Ronsheim is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). P. Ronsheim collaborates with scholars based in United States, Japan and France. P. Ronsheim's co-authors include Wilfried Haensch, O. Dokumaci, P. M. Solomon, D.J. Frank, J. Jopling, C. D'Emic, C. Cabral, J. Kedzierski, M. Ieong and Sufi Zafar and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

P. Ronsheim

28 papers receiving 414 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Ronsheim United States	11	353	130	108	87	41	33	446
Shanthi Subramanian United States	8	133 0.4×	97 0.7×	148 1.4×	60 0.7×	45 1.1×	14	321
D. Bouvet Switzerland	14	457 1.3×	82 0.6×	229 2.1×	258 3.0×	53 1.3×	53	628
R. Bisaro France	9	268 0.8×	95 0.7×	222 2.1×	54 0.6×	36 0.9×	27	366
M. Texier France	12	223 0.6×	119 0.9×	165 1.5×	90 1.0×	38 0.9×	39	359
M. Hopstaken Netherlands	15	478 1.4×	154 1.2×	145 1.3×	49 0.6×	28 0.7×	38	541
S. Nishino Japan	11	403 1.1×	62 0.5×	135 1.3×	32 0.4×	66 1.6×	39	493
Jer‐Shen Maa Taiwan	11	260 0.7×	134 1.0×	114 1.1×	64 0.7×	41 1.0×	38	363
Kun‐An Chiu Taiwan	9	299 0.8×	83 0.6×	131 1.2×	21 0.2×	39 1.0×	31	351
Hiroaki Saitoh Japan	11	297 0.8×	104 0.8×	129 1.2×	85 1.0×	15 0.4×	24	382
C. J. Varker United States	10	372 1.1×	104 0.8×	101 0.9×	44 0.5×	23 0.6×	26	413

Countries citing papers authored by P. Ronsheim

Since Specialization

Citations

This map shows the geographic impact of P. Ronsheim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Ronsheim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Ronsheim more than expected).

Fields of papers citing papers by P. Ronsheim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Ronsheim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Ronsheim. The network helps show where P. Ronsheim may publish in the future.

Co-authorship network of co-authors of P. Ronsheim

This figure shows the co-authorship network connecting the top 25 collaborators of P. Ronsheim. A scholar is included among the top collaborators of P. Ronsheim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Ronsheim. P. Ronsheim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Dai, Min, et al.. (2010). Investigation of an on product high-k/metal metrology methodology using an in-line, high throughput XPS measurement technique. 61–64. 1 indexed citations

Ronsheim, P., et al.. (2008). Impurity measurements in silicon with D-SIMS and atom probe tomography. Applied Surface Science. 255(4). 1547–1550. 28 indexed citations

Lauer, Isaac, et al.. (2008). Comparison of Plasma Doping with Implant for High Performance SOI CMOS Fabrication. 1 indexed citations

Paruchuri, Vamsi, Vijay Narayanan, B.P. Linder, et al.. (2007). Band Edge High-κ/Metal Gate n-MOSFETs Using Ultra Thin Capping Layers. 1–2. 3 indexed citations

Guha, Supratik, Vijay Narayanan, Vamsi Paruchuri, et al.. (2006). Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem. ECS Transactions. 3(2). 247–252. 2 indexed citations

Ren, Zhibin, M. Ieong, Jian Cai, et al.. (2006). Selective epitaxial channel ground plane thin SOI CMOS devices. 42. 733–736. 5 indexed citations

Solomon, P. M., D.J. Frank, J. Jopling, et al.. (2004). Tunnel current measurements on P/N junction diodes and implications for future device design. ed 30. 9.3.1–9.3.4. 7 indexed citations

Solomon, P. M., J. Jopling, D.J. Frank, et al.. (2004). Universal tunneling behavior in technologically relevant P/N junction diodes. Journal of Applied Physics. 95(10). 5800–5812. 90 indexed citations

Kedzierski, J., D. Boyd, P. Ronsheim, et al.. (2004). Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS). 13.3.1–13.3.4. 40 indexed citations

10.

Hovel, H.J., Pei‐Yun Tsai, D. Schepis, et al.. (2004). Qualification of 300 mm SOI CMOS substrate material: readiness for development and manufacturing. Solid-State Electronics. 48(6). 1065–1072. 5 indexed citations

11.

Jones, E.C., P. Ronsheim, C. Cabral, et al.. (2003). Dopant redistribution in SOI during RTA: a study on doping in scaled-down Si layers. 97 23. 337–340. 2 indexed citations

12.

Inaba, S., Ryoichi Katsumata, R. Rengarajan, et al.. (2002). Threshold voltage roll-up/roll-off characteristic control in sub-0.2-μm single workfunction gate CMOS for high-performance DRAM applications. IEEE Transactions on Electron Devices. 49(2). 308–313. 2 indexed citations

13.

Guha, Supratik, E. P. Gusev, H. Schmidt, et al.. (2002). High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation. Applied Physics Letters. 81(16). 2956–2958. 63 indexed citations

14.

Dokumaci, O., et al.. (2000). Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion. MRS Proceedings. 610. 5 indexed citations

15.

Yu, Edward T., Katayun Barmak, P. Ronsheim, et al.. (1996). Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy. Journal of Applied Physics. 79(4). 2115–2121. 22 indexed citations

16.

Huang, Huakun, Robert F. Cook, David R. Campbell, et al.. (1988). Platinum silicide contact to arsenic-doped polycrystalline silicon. Journal of Applied Physics. 63(4). 1111–1116. 6 indexed citations

17.

Ronsheim, P., L. E. Toth, & E. Pfender. (1982). Condensation of plasma-processed WC on graphite. Journal of Materials Science Letters. 1(8). 343–346. 5 indexed citations

18.

Ronsheim, P., et al.. (1981). Thermal plasma synthesis of transition metal nitrides and alloys. Plasma Chemistry and Plasma Processing. 1(2). 135–147. 15 indexed citations

19.

Ronsheim, P., et al.. (1981). Direct currect arc-plasma synthesis of tungsten carbides. Journal of Materials Science. 16(10). 2665–2674. 23 indexed citations

20.

Pfender, E., et al.. (1981). D.C. arc plasma titanium and vanadium compound synthesis from metal powders and gas phase non-metals. Materials Science and Engineering. 48(1). 21–26. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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