Ming‐Jinn Tsai

7.6k citations

147 papers · 6.2k indexed · 1 hit paper · h-index 37

Electrical and Electronic Engineering top 0.5%
Materials Chemistry top 5%
Polymers and Plastics top 1%
Cellular and Molecular Neuroscience top 1%
Electronic, Optical and Magnetic Materials top 10%

Co-authors: Heng-Yuan Lee Pang-Shiu Chen Yu-Sheng Chen Shimeng YuYi WuByoungil Lee H.-S. Philip Wong Frederick Chen
Topics: Advanced Memory and Neural Computing (101 papers)Ferroelectric and Negative Capacitance Devices (78 papers)Semiconductor materials and devices (47 papers)
Cited by: Electrical and Electronic Engineering Polymers and Plastics Cellular and Molecular Neuroscience
Journals: Advanced Materials ACS Nano Applied Physics Letters
Partner nations: Taiwan United States China

In The Last Decade

Ming‐Jinn Tsai

143 papers receiving 6.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Metal–Oxide RRAM

2012 2.2k citations Heng-Yuan Lee, Yu-Sheng Chen et al. profile →

Peers

Countries citing papers authored by Ming‐Jinn Tsai

Since Specialization

Citations

This map shows the geographic impact of Ming‐Jinn Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming‐Jinn Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming‐Jinn Tsai more than expected).

Fields of papers citing papers by Ming‐Jinn Tsai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming‐Jinn Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming‐Jinn Tsai. The network helps show where Ming‐Jinn Tsai may publish in the future.

Co-authorship network of co-authors of Ming‐Jinn Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of Ming‐Jinn Tsai. A scholar is included among the top collaborators of Ming‐Jinn Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming‐Jinn Tsai. Ming‐Jinn Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Write-energy-saving ReRAM-based nonvolatile SRAM with redundant bit-write-aware controller for last-level caches 2017 ·(unknown),Lih‐Yih Chiou,(unknown),Shyh-Shyuan Sheu,Peihua Wang,Ming‐Jinn Tsai,Chih‐I Wu	4
2	A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application 2013 ·Shyh-Shyuan Sheu,Chia-Chen Kuo,Meng‐Fan Chang,(unknown),(unknown),(unknown),(unknown),Wen-Pin Lin,(unknown),(unknown),(unknown),Heng-Yuan Lee,Pang-Shiu Chen,Yu‐Sheng Chen,(unknown),Frederick T. Chen,Keng-Li Su,Tzu-Kun Ku,Ming‐Jinn Tsai,Ming‐Jer Kao	42
3	Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure 2013 ·IEEE Electron Device Letters ·(unknown),Ting‐Chang Chang,Yichun Wu,(unknown),(unknown),Yuting Chen,(unknown),(unknown),Simon M. Sze,Ming‐Jinn Tsai,Ying-Lang Wang,Ann‐Kuo Chu	14
4	Polarity Reversion of the Operation Mode of HfO<SUB>2</SUB>-Based Resistive Random Access Memory Devices by Inserting Hf Metal Layer 2013 ·Journal of Nanoscience and Nanotechnology ·(unknown),Wen-Yuan Chang,(unknown),Wei-Su Chen,Frederick Chen,Ming‐Jinn Tsai	5
5	Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte 2012 ·Nanoscale Research Letters ·S. Z. Rahaman,S. Maikap,Atanu Das,Amit Prakash,(unknown),Chao‐Sung Lai,Ta–Chang Tien,Wei-Su Chen,Heng-Yuan Lee,Frederick T. Chen,Ming‐Jinn Tsai,Liann‐Be Chang	28
6	Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface 2012 ·Nanoscale Research Letters ·S. Z. Rahaman,S. Maikap,Ta–Chang Tien,Heng-Yuan Lee,Wei-Su Chen,Frederick T. Chen,Ming‐Jer Kao,Ming‐Jinn Tsai	71
7	Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory 2012 ·Solid-State Electronics ·Pang-Shiu Chen,Yu-Sheng Chen,Heng-Yuan Lee,(unknown),Pei-Yi Gu,Frederick Chen,Ming‐Jinn Tsai	7
8	Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory 2012 ·Electrochemical and Solid-State Letters ·Pang-Shiu Chen,Yu‐Sheng Chen,Heng-Yuan Lee,Tai-Yuan Wu,Pei-Yi Gu,Frederick Chen,Ming‐Jinn Tsai	8
9	Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications 2012 ·IEEE Electron Device Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Ting‐Chang Chang,Yong-En Syu,(unknown),Geng-Wei Chang,(unknown),Min-Chen Chen,Hui‐Chun Huang,(unknown),Ya‐Hsiang Tai,Dershin Gan,Ya‐Liang Yang,Tai-Fa Young,Bae‐Heng Tseng,Kai-Huang Chen,Ming‐Jinn Tsai,(unknown),H. Sze,Simon M. Sze	45
10	Crystallization Kinetics of Amorphous Ga-Sb Films Extended for Phase-Change Memory 2011 ·Journal of Nanoscience and Nanotechnology ·(unknown),(unknown),Ming‐Jinn Tsai,Tri‐Rung Yew,Tsung‐Shune Chin	6
11	Experimental investigation of the reliability issue of RRAM based on high resistance state conduction 2011 ·Nanotechnology ·Lijie Zhang,(unknown),Frederick T. Chen,Heng-Yuan Lee,Yu-Sheng Chen,Wei-Su Chen,Pei-Yi Gu,(unknown),Shunmin Wang,Chen-Han Tsai,Ru Huang,Ming‐Jinn Tsai	30
12	Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer 2011 ·IEEE Electron Device Letters ·Yu-Sheng Chen,Heng-Yuan Lee,Pang-Shiu Chen,Pei-Yi Gu,(unknown),Wei-Su Chen,(unknown),Chen-Han Tsai,Frederick Chen,Ming‐Jinn Tsai,Chenhsin Lien	30
13	Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM 2011 ·Lijie Zhang,Ru Huang,(unknown),Frederick T. Chen,Heng-Yuan Lee,Yu-Sheng Chen,Wei-Su Chen,Pei-Yi Gu,(unknown),Shunmin Wang,Chen-Han Tsai,Ming‐Jinn Tsai,Pang-Shiu Chen	15
14	A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications 2010 ·Pi-Feng Chiu,Meng‐Fan Chang,Shyh-Shyuan Sheu,Ku-Feng Lin,Pei-Chia Chiang,Che-Wei Wu,Wen-Pin Lin,(unknown),(unknown),Frederick T. Chen,Keng-Li Su,Ming‐Jer Kao,Ming‐Jinn Tsai	35
15	Resistance Switching Characteristics of TiO[sub 2] Thin Films Prepared with Reactive Sputtering 2009 ·Electrochemical and Solid-State Letters ·(unknown),Jon-Yiew Gan,(unknown),Nyan‐Hwa Tai,Pei-Jer Tzeng,(unknown),Frederick Chen,Ming‐Jinn Tsai	17
16	Performances of GeSnSbTe Material for High-Speed Phase Change Memory 2007 ·Chain‐Ming Lee,Der-Sheng Chao,(unknown),(unknown),(unknown),(unknown),(unknown),Wenhan Wang,Wei-Su Chen,(unknown),(unknown),Ming‐Jer Kao,Ming‐Jinn Tsai	2
17	Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme 2007 ·Applied Physics Letters ·Yuan-Jen Lee,Chien‐Ching Hung,(unknown),(unknown),Wei‐Chuan Chen,Shan-Yi Yang,Kuei‐Hung Shen,Yung-Hung Wang,Yung‐Hsiang Chen,Ming‐Jer Kao,Ming‐Jinn Tsai	0
18	Interfacial and annealing effects on magnetic properties of CoFeB thin films 2006 ·Journal of Applied Physics ·Yung-Hung Wang,Wei‐Chuan Chen,Shan-Yi Yang,Kuei‐Hung Shen,Chando Park,Ming‐Jer Kao,Ming‐Jinn Tsai	77
19	Snapback by Hot Filament 2006 ·(unknown),Fred K. Chen,Der-Sheng Chao,Wenhan Wang,(unknown),Chain‐Ming Lee,Ming‐Jinn Tsai,Ming‐Jer Kao	3
20	A novel trench termination design for 100-V TMBS diode application 2001 ·IEEE Electron Device Letters ·(unknown),(unknown),Ming‐Jer Kao,(unknown),Ming‐Jinn Tsai	3

About Ming‐Jinn Tsai

Ming‐Jinn Tsai is a scholar working on Polymers and Plastics, Electrical and Electronic Engineering and Materials Chemistry, having authored 147 papers that have together received 6.2k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (101 papers), Ferroelectric and Negative Capacitance Devices (78 papers) and Semiconductor materials and devices (47 papers). The work is most often cited by research in Electrical and Electronic Engineering (5.9k citations), Polymers and Plastics (1.4k citations) and Cellular and Molecular Neuroscience (1.4k citations). Ming‐Jinn Tsai has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Shimeng Yu, Yi Wu, Byoungil Lee, H.-S. Philip Wong, Frederick Chen, Wen-Yuan Chang and Tai‐Bor Wu. Their work appears in journals such as Advanced Materials, ACS Nano and Applied Physics Letters.

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