Paul Hendrickx

925 total citations
21 papers, 243 citations indexed

About

Paul Hendrickx is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Paul Hendrickx has authored 21 papers receiving a total of 243 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Computer Networks and Communications. Recurrent topics in Paul Hendrickx's work include Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (12 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Paul Hendrickx is often cited by papers focused on Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (12 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Paul Hendrickx collaborates with scholars based in Belgium, Germany and Netherlands. Paul Hendrickx's co-authors include D. Wellekens, R. Degraeve, G. Groeseneken, L. Haspeslagh, G. Tempel, Jan Van Houdt, M. Lorenzini, B. Kaczer, G. J. M. Dormans and H.E. Maes and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Paul Hendrickx

20 papers receiving 236 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Paul Hendrickx Belgium 9 220 44 30 13 10 21 243
P. Candelier France 12 323 1.5× 18 0.4× 46 1.5× 17 1.3× 27 2.7× 29 337
Wandong Kim South Korea 9 205 0.9× 92 2.1× 48 1.6× 15 1.2× 5 0.5× 26 248
N. Arai Japan 9 230 1.0× 42 1.0× 45 1.5× 6 0.5× 2 0.2× 28 242
O. Tsuchiya Japan 8 353 1.6× 75 1.7× 52 1.7× 21 1.6× 3 0.3× 15 380
Sung-Joo Hong South Korea 8 234 1.1× 115 2.6× 32 1.1× 42 3.2× 3 0.3× 25 269
Ping-Chen Huang Taiwan 9 337 1.5× 11 0.3× 29 1.0× 16 1.2× 21 2.1× 14 356
D. Park South Korea 11 257 1.2× 66 1.5× 21 0.7× 11 0.8× 2 0.2× 20 278
Zijian Zhao United States 11 284 1.3× 16 0.4× 93 3.1× 26 2.0× 7 0.7× 39 320
E. Vecchio Belgium 9 229 1.0× 9 0.2× 58 1.9× 6 0.5× 23 2.3× 16 243
Weiran Kong China 10 211 1.0× 21 0.5× 37 1.2× 41 3.2× 8 0.8× 30 239

Countries citing papers authored by Paul Hendrickx

Since Specialization
Citations

This map shows the geographic impact of Paul Hendrickx's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paul Hendrickx with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paul Hendrickx more than expected).

Fields of papers citing papers by Paul Hendrickx

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paul Hendrickx. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paul Hendrickx. The network helps show where Paul Hendrickx may publish in the future.

Co-authorship network of co-authors of Paul Hendrickx

This figure shows the co-authorship network connecting the top 25 collaborators of Paul Hendrickx. A scholar is included among the top collaborators of Paul Hendrickx based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paul Hendrickx. Paul Hendrickx is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hendrickx, Paul, Tim Snijders, Ivo Lambrichts, et al.. (2022). Skeletal Muscles of Patients Infected with SARS-CoV-2 Develop Severe Myofiber Damage upon One Week of Admission on the Intensive Care Unit. Applied Sciences. 12(14). 7310–7310. 2 indexed citations
2.
Degraeve, R., A. Mallik, Daniele Garbin, et al.. (2018). Opportunities and Challenges of Resistive RAM for Neuromorphic Applications. 2018. 1–5. 2 indexed citations
3.
4.
Zhang, Leqi, A. Redolfi, D. Crotti, et al.. (2014). High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance. 164–167. 2 indexed citations
5.
Wu, Yung‐Hsien, Dirk J. Wouters, Paul Hendrickx, et al.. (2013). On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure. IEEE Electron Device Letters. 1 indexed citations
6.
Wu, Yung‐Hsien, Dirk J. Wouters, Paul Hendrickx, et al.. (2013). On the Bipolar Resistive Switching Memory Using TiN/Hf/HfO2/Si MIS Structure. IEEE Electron Device Letters. 34(3). 414–416. 10 indexed citations
7.
Civale, Yann, Kristof Croes, A. Redolfi, et al.. (2011). Thermal stability of copper Through-Silicon Via barriers during IC processing. 1–3. 10 indexed citations
8.
Degraeve, R., B. Kaczer, M. Lorenzini, et al.. (2004). Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories. IEEE Transactions on Electron Devices. 51(9). 1392–1400. 66 indexed citations
9.
10.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (2003). Low voltage low cost nitride embedded flash memory cell. 62–64. 3 indexed citations
11.
Degraeve, R., M. Lorenzini, D. Wellekens, et al.. (2002). Analytical model for failure rate prediction due to anomalous charge loss of flash memories. 32.1.1–32.1.4. 31 indexed citations
12.
Tempel, G., et al.. (2002). Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model. Japanese Journal of Applied Physics. 41(Part 1, No. 4B). 2650–2653. 8 indexed citations
13.
Degraeve, R., B. Kaczer, M. Lorenzini, et al.. (2002). Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layers. 6.2.1–6.2.4. 21 indexed citations
14.
Degraeve, R., et al.. (2002). Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells. IEEE Transactions on Device and Materials Reliability. 2(4). 80–88. 10 indexed citations
15.
Degraeve, R., B. Kaczer, M. Lorenzini, et al.. (2001). Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers. 2 indexed citations
16.
17.
Wellekens, D., Jan Van Houdt, L. Haspeslagh, et al.. (2000). Embedded HIMOS(R) flash memory in 0.35 μm and 0.25 μm CMOS technologies. IEEE Transactions on Electron Devices. 47(11). 2153–2160. 14 indexed citations
18.
Houdt, Jan Van, et al.. (1997). Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories. 1 indexed citations
19.
Houdt, Jan Van, et al.. (1996). Comparison Of The Suitability Of Various Programming Mechanisms Used For Multilevel Non-Volatile Information Storage. European Solid-State Device Research Conference. 139–142. 5 indexed citations
20.
Hendrickx, Paul. (1984). Partial Dubbing. Meta Journal des traducteurs. 29(2). 217–217. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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