J.L. Regolini

2.0k total citations
97 papers, 1.5k citations indexed

About

J.L. Regolini is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.L. Regolini has authored 97 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 34 papers in Materials Chemistry. Recurrent topics in J.L. Regolini's work include Semiconductor materials and devices (46 papers), Silicon and Solar Cell Technologies (35 papers) and Semiconductor materials and interfaces (30 papers). J.L. Regolini is often cited by papers focused on Semiconductor materials and devices (46 papers), Silicon and Solar Cell Technologies (35 papers) and Semiconductor materials and interfaces (30 papers). J.L. Regolini collaborates with scholars based in France, Switzerland and United States. J.L. Regolini's co-authors include D. Bensahel, S. Bodnar, J. Mercier, P. Morin, P. Boucaud, Daniel L. Benoit, T. Skotnicki, J. F. Gibbons, E. Scheid and T. W. Sigmon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J.L. Regolini

95 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.L. Regolini France 22 1.3k 559 473 261 108 97 1.5k
H. Tanoue Japan 22 1.1k 0.8× 640 1.1× 551 1.2× 227 0.9× 241 2.2× 128 1.6k
J. H. Dinan United States 21 1.1k 0.8× 579 1.0× 409 0.9× 117 0.4× 63 0.6× 78 1.2k
C. O. Bozler United States 22 1.2k 0.9× 733 1.3× 228 0.5× 314 1.2× 54 0.5× 77 1.4k
D. Bensahel France 27 1.9k 1.5× 1.1k 1.9× 1.1k 2.2× 508 1.9× 156 1.4× 142 2.3k
S. D. Brotherton United Kingdom 27 2.3k 1.7× 675 1.2× 819 1.7× 278 1.1× 281 2.6× 83 2.4k
H. Cerva Germany 23 994 0.7× 590 1.1× 613 1.3× 252 1.0× 125 1.2× 91 1.5k
A. J. Pidduck United Kingdom 19 748 0.6× 836 1.5× 334 0.7× 193 0.7× 158 1.5× 46 1.3k
A. Cowley United States 13 1.4k 1.0× 1.1k 2.0× 447 0.9× 180 0.7× 52 0.5× 23 1.7k
A. Misiuk Poland 17 821 0.6× 415 0.7× 734 1.6× 164 0.6× 149 1.4× 244 1.1k
J. C. Pfister France 19 1.4k 1.1× 863 1.5× 761 1.6× 340 1.3× 138 1.3× 72 1.6k

Countries citing papers authored by J.L. Regolini

Since Specialization
Citations

This map shows the geographic impact of J.L. Regolini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Regolini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Regolini more than expected).

Fields of papers citing papers by J.L. Regolini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Regolini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Regolini. The network helps show where J.L. Regolini may publish in the future.

Co-authorship network of co-authors of J.L. Regolini

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Regolini. A scholar is included among the top collaborators of J.L. Regolini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Regolini. J.L. Regolini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chantre, A., M. Marty, J.L. Regolini, et al.. (2002). A high performance low complexity SiGe HBT for BiCMOS integration. 93–96. 12 indexed citations
2.
Skotnicki, T., et al.. (1999). Multiple SiGe Quantum Wells - Novel Channel Architecture for 0.12 um CMOS. European Solid-State Device Research Conference. 1. 292–295. 3 indexed citations
3.
Gwoziecki, R., M. Jurczak, T. Skotnicki, J.L. Regolini, & M. Paoli. (1999). Suitability of Elevated Source/Drain for Deep Submicron CMOS. European Solid-State Device Research Conference. 1. 384–387. 5 indexed citations
4.
Josse, E., T. Skotnicki, J.L. Regolini, A. Grouillet, & C. Papadas. (1999). High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels. European Solid-State Device Research Conference. 1. 568–571. 1 indexed citations
5.
Jurczak, M., T. Skotnicki, M. Paoli, et al.. (1999). SON (silicon on nothing)-a new device architecture for the ULSI era. 29–30. 32 indexed citations
6.
Ribot, P., et al.. (1999). Process stability of SiGe heterostructures for BiCMOS applications. Journal de Physique IV (Proceedings). 9(PR8). Pr8–327. 4 indexed citations
7.
Chantre, A., M. Marty, J.L. Regolini, et al.. (1998). A highly manufacturable 0.35um SiGe HBT technology with 70GHz fmax. European Solid-State Device Research Conference. 448–451. 1 indexed citations
8.
Assous, M., et al.. (1998). Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1740–1744. 5 indexed citations
9.
Aubry-Fortuna, V., M. Mamor, F. Meyer, et al.. (1997). What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?. Microelectronic Engineering. 37-38. 573–579. 6 indexed citations
10.
Regolini, J.L.. (1997). Selective Si/SiGe Heterostructures for Advanced CMOS and BiCMOS Technologies. MRS Proceedings. 470. 1 indexed citations
11.
Boucaud, P., C. Guedj, D. Bouchier, et al.. (1995). Optical properties of bulk and multi-quantum well SiGe: C heterostructures. Journal of Crystal Growth. 157(1-4). 410–413. 5 indexed citations
12.
Regolini, J.L., et al.. (1995). Selective Titanium Silicide for Industrial Applications. MRS Proceedings. 402. 6 indexed citations
13.
Berbézier, Isabelle, J.L. Regolini, & C. d’Anterroches. (1993). Epitaxial orientation of β-FeSi2/Si heterojunctions obtained by RTP chemical vapor deposition. Microscopy Microanalysis Microstructures. 4(1). 5–21. 9 indexed citations
14.
Gruhle, A., P. A. Badoz, Florian Chevalier, et al.. (1991). Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz. Microelectronic Engineering. 15(1-4). 27–30. 4 indexed citations
15.
Badoz, P. A., et al.. (1990). Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid. Applied Physics Letters. 56(23). 2307–2309. 7 indexed citations
16.
Fogarassy, É., S. de Unamuno, J.L. Regolini, & C. Fuchs. (1987). Analysis of the thermal contribution to u.v. laser-induced oxidation of silicon and silicon monoxide. Philosophical Magazine B. 55(2). 253–260. 11 indexed citations
17.
Shibata, T., T. W. Sigmon, J.L. Regolini, & J. F. Gibbons. (1981). Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams. Journal of The Electrochemical Society. 128(3). 637–644. 32 indexed citations
18.
Regolini, J.L., T. W. Sigmon, & J. F. Gibbons. (1979). Metastable 75As concentrations formed by scanned cw e-beam annealing of 75As-implanted silicon. Applied Physics Letters. 35(2). 114–116. 19 indexed citations
19.
Gibbons, J. F., A. Gat, L. Gerzberg, et al.. (1979). Annealing of ion-implanted Si using scanned laser and electron beams. AIP conference proceedings. 50. 365–380. 1 indexed citations
20.
Regolini, J.L., J. F. Gibbons, T. W. Sigmon, et al.. (1979). Scanning-electron-beam annealing of arsenic-implanted silicon. Applied Physics Letters. 34(6). 410–412. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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