F. Huet

545 total citations
37 papers, 431 citations indexed

About

F. Huet is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, F. Huet has authored 37 papers receiving a total of 431 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in F. Huet's work include Photonic and Optical Devices (19 papers), Semiconductor Lasers and Optical Devices (19 papers) and Optical Network Technologies (12 papers). F. Huet is often cited by papers focused on Photonic and Optical Devices (19 papers), Semiconductor Lasers and Optical Devices (19 papers) and Optical Network Technologies (12 papers). F. Huet collaborates with scholars based in France, Hungary and United Kingdom. F. Huet's co-authors include M. Carré, F. Devaux, A. Ougazzaden, A. Carenco, M.A. di Forte-Poisson, B. Pécz, E. Bigan, J.F. Kerdiles, A. Mircéa and M. Henry and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

F. Huet

36 papers receiving 410 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Huet France 13 333 208 126 74 56 37 431
Won-Jin Choi United States 9 261 0.8× 170 0.8× 136 1.1× 72 1.0× 48 0.9× 39 349
Franz Eberhard Germany 10 201 0.6× 145 0.7× 193 1.5× 87 1.2× 56 1.0× 22 318
S. C. Wang Taiwan 9 372 1.1× 375 1.8× 79 0.6× 49 0.7× 36 0.6× 25 444
Yuzaburoh Ban Japan 12 199 0.6× 202 1.0× 218 1.7× 132 1.8× 107 1.9× 30 378
Jun-Youn Kim South Korea 14 279 0.8× 227 1.1× 281 2.2× 122 1.6× 120 2.1× 29 459
K. Schüll Germany 11 326 1.0× 318 1.5× 63 0.5× 177 2.4× 28 0.5× 26 418
B. Yavich Brazil 10 144 0.4× 169 0.8× 169 1.3× 128 1.7× 86 1.5× 54 330
H.‐J. Bühlmann Switzerland 11 218 0.7× 236 1.1× 161 1.3× 114 1.5× 55 1.0× 32 363
H. Tews Germany 10 313 0.9× 281 1.4× 166 1.3× 173 2.3× 70 1.3× 39 457
M. J. Jurkovic United States 9 414 1.2× 372 1.8× 173 1.4× 151 2.0× 61 1.1× 19 510

Countries citing papers authored by F. Huet

Since Specialization
Citations

This map shows the geographic impact of F. Huet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Huet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Huet more than expected).

Fields of papers citing papers by F. Huet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Huet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Huet. The network helps show where F. Huet may publish in the future.

Co-authorship network of co-authors of F. Huet

This figure shows the co-authorship network connecting the top 25 collaborators of F. Huet. A scholar is included among the top collaborators of F. Huet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Huet. F. Huet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
3.
Reverchon, J.-L., F. Huet, M. A. Poisson, et al.. (2001). Photoconductance measurements and Stokes shift in InGaN alloys. Materials Science and Engineering B. 82(1-3). 197–199. 4 indexed citations
4.
Pécz, B., et al.. (2001). V-shaped defects connected to inversion domains in AlGaN layers. Applied Physics Letters. 78(11). 1529–1531. 45 indexed citations
5.
Pécz, B., et al.. (2001). Characterization of GaAlN/GaN Superlattice Heterostructures. Materials science forum. 353-356. 803–806. 2 indexed citations
6.
Huet, F., et al.. (2000). Photoconductance measurements on thin InGaN layers. Journal of Applied Physics. 88(9). 5138–5141. 10 indexed citations
7.
Huet, F., M.A. di Forte-Poisson, Albert Romann, et al.. (1999). Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction. Materials Science and Engineering B. 59(1-3). 198–201. 4 indexed citations
8.
Huet, F., et al.. (1999). The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures. Journal of Electronic Materials. 28(12). 1440–1443. 5 indexed citations
9.
Pécz, B., M.A. di Forte-Poisson, F. Huet, et al.. (1999). Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition. Journal of Applied Physics. 86(11). 6059–6067. 25 indexed citations
10.
Forte-Poisson, M.A. di, F. Huet, Albert Romann, et al.. (1998). Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 195(1-4). 314–318. 23 indexed citations
11.
Allovon, M., A. Talneau, E. V. K. Rao, et al.. (1997). Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP. Applied Physics Letters. 71(13). 1750–1752. 5 indexed citations
12.
Devaux, F., A. Ougazzaden, F. Huet, & M. Carré. (1997). Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz. IEEE Photonics Technology Letters. 9(7). 931–933. 4 indexed citations
13.
Devaux, F., et al.. (1996). High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain. IEEE Photonics Technology Letters. 8(2). 218–220. 9 indexed citations
14.
Devaux, F., et al.. (1994). Experimental optimisation of MQW electroabsorptionmodulatorswith up to 40 GHz bandwidths. Electronics Letters. 30(16). 1347–1348. 29 indexed citations
15.
Devaux, F., et al.. (1993). 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator. Electronics Letters. 29(13). 1201–1203. 14 indexed citations
16.
Devine, R. A. B., et al.. (1992). Evidence for Low Temperature UV Annealing of UVCVD, PECVD and Sog Based SiO2 Films. MRS Proceedings. 284. 1 indexed citations
17.
Devaux, F., E. Bigan, M. Allovon, et al.. (1992). Electroabsorption modulator based on Wannier–Stark localization with 20 GHz/V efficiency. Applied Physics Letters. 61(23). 2773–2775. 15 indexed citations
18.
Devaux, F., E. Bigan, A. Ougazzaden, et al.. (1992). Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz. IEEE Photonics Technology Letters. 4(7). 720–723. 33 indexed citations
19.
Devaux, F., E. Bigan, A. Ougazzaden, et al.. (1992). InGaAsP/InGaAsP Multiple Quantum Well modulator with improved saturation intensity and bandwidth over 20 GHz. PD4–PD4. 1 indexed citations
20.
Huet, F., et al.. (1990). Interferometric-type polarisation splitter on Z-propagating LiNbO 3 :Ti. Electronics Letters. 26(23). 1940–1941. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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