G. Tränkle

907 total citations
65 papers, 684 citations indexed

About

G. Tränkle is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, G. Tränkle has authored 65 papers receiving a total of 684 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 14 papers in Condensed Matter Physics. Recurrent topics in G. Tränkle's work include Semiconductor Quantum Structures and Devices (34 papers), Semiconductor Lasers and Optical Devices (25 papers) and Photonic and Optical Devices (20 papers). G. Tränkle is often cited by papers focused on Semiconductor Quantum Structures and Devices (34 papers), Semiconductor Lasers and Optical Devices (25 papers) and Photonic and Optical Devices (20 papers). G. Tränkle collaborates with scholars based in Germany, Japan and Russia. G. Tränkle's co-authors include Joachim Würfl, H. Wenzel, G. Erbert, G. Erbert, F. Bugge, Bernd Sumpf, M. Weyers, Nidhi Chaturvedi, A. Klehr and P. Crump and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Tränkle

62 papers receiving 640 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Tränkle Germany 16 570 412 188 53 51 65 684
M. Nido Japan 13 388 0.7× 520 1.3× 327 1.7× 76 1.4× 115 2.3× 49 681
Marco Vallone Italy 13 427 0.7× 249 0.6× 213 1.1× 78 1.5× 94 1.8× 59 545
T. Kuroda Japan 17 654 1.1× 642 1.6× 216 1.1× 94 1.8× 102 2.0× 43 915
P. Ganser Germany 17 451 0.8× 657 1.6× 258 1.4× 45 0.8× 81 1.6× 45 703
Naoki Kobayashi Naoki Kobayashi Japan 12 312 0.5× 354 0.9× 163 0.9× 77 1.5× 115 2.3× 34 488
R. Kaspi United States 11 420 0.7× 351 0.9× 53 0.3× 59 1.1× 93 1.8× 56 491
D. A. Vinokurov Russia 16 663 1.2× 624 1.5× 91 0.5× 90 1.7× 94 1.8× 73 799
M. T. Emeny United Kingdom 16 564 1.0× 678 1.6× 91 0.5× 97 1.8× 215 4.2× 43 803
L. Buckle United Kingdom 17 643 1.1× 693 1.7× 204 1.1× 158 3.0× 168 3.3× 48 885
Kumiko Asami Japan 13 295 0.5× 341 0.8× 223 1.2× 42 0.8× 188 3.7× 37 493

Countries citing papers authored by G. Tränkle

Since Specialization
Citations

This map shows the geographic impact of G. Tränkle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Tränkle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Tränkle more than expected).

Fields of papers citing papers by G. Tränkle

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Tränkle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Tränkle. The network helps show where G. Tränkle may publish in the future.

Co-authorship network of co-authors of G. Tränkle

This figure shows the co-authorship network connecting the top 25 collaborators of G. Tränkle. A scholar is included among the top collaborators of G. Tränkle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Tränkle. G. Tränkle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Osipov, K. Yu., et al.. (2018). Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology. IEEE Transactions on Electron Devices. 65(8). 3176–3184. 21 indexed citations
2.
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4.
Crump, P., C. M. Schultz, H. Wenzel, G. Erbert, & G. Tränkle. (2012). Efficiency-optimized monolithic frequency stabilization of high-power diode lasers. Journal of Physics D Applied Physics. 46(1). 13001–13001. 21 indexed citations
5.
Bahat‐Treidel, Eldad, Oliver Hilt, R. Lossy, et al.. (2010). Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs. Semiconductor Science and Technology. 25(7). 75005–75005. 5 indexed citations
6.
Schultz, C. M., P. Crump, H. Wenzel, et al.. (2010). 11W Broad Area 976nm DFB Lasers with 58% Efficiency. 21. CWE1–CWE1. 2 indexed citations
7.
Sumpf, Bernd, P. Adamiec, M. Zorn, et al.. (2008). 650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6876. 68760M–68760M. 8 indexed citations
8.
Brox, O., F. Scholz, F. Bugge, et al.. (2008). Integrated 1060nm MOPA pump source for high-power green light emitters in display technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6909. 69091G–69091G. 7 indexed citations
9.
Sumpf, Bernd, M. Zorn, P. Ressel, et al.. (2006). 3 W - Broad Area Lasers and 12 W - Bars with Conversion Efficiencies up to 40% at 650 nm. 3628. 37–38. 2 indexed citations
10.
Sumpf, Bernd, et al.. (2006). High-Power 808-nm Tapered Diode Lasers With Nearly Diffraction-Limited Beam Quality of at W. 7 indexed citations
11.
Knigge, Andrea, G. Erbert, Joakim Jönsson, et al.. (2005). Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25°C. Electronics Letters. 41(5). 250–251. 38 indexed citations
12.
13.
Zeimer, U., J. Grenzer, Souren Grigorian, et al.. (2003). Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures. physica status solidi (a). 195(1). 178–182. 3 indexed citations
14.
Hilsenbeck, J., et al.. (2000). Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts. Electronics Letters. 36(11). 980–981. 23 indexed citations
15.
Achouche, M., et al.. (2000). High performance InGaP/GaAs HBTs for mobile communications. Electronics Letters. 36(12). 1073–1075. 12 indexed citations
16.
Achouche, M., W. John, Frank Brunner, et al.. (1999). GaAs microwave power HBTs for mobile communications. AMS Acta (University of Bologna). 1 indexed citations
17.
Bachem, K. H., et al.. (1998). Advantages of Al-free GalnP/lnGaAs PHEMTsfor power applications. Electronics Letters. 34(6). 590–592. 5 indexed citations
18.
Karraï, K., et al.. (1995). Photodetector with subwavelength spatial resolution. Ultramicroscopy. 57(2-3). 208–211. 4 indexed citations
19.
Heinzel, T., D. Wharam, F. M. de Aguiar, et al.. (1994). Current-voltage characteristics of quantum point contacts in the high-bias regime. Semiconductor Science and Technology. 9(6). 1220–1225. 12 indexed citations
20.
Abstreiter, G., R. Huber, G. Tränkle, & B. Vinter. (1983). Subband energies in accumulation layers on InP. Solid State Communications. 47(8). 651–654. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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