S. Bollaert

2.5k total citations
99 papers, 1.8k citations indexed

About

S. Bollaert is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. Bollaert has authored 99 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 72 papers in Atomic and Molecular Physics, and Optics and 15 papers in Condensed Matter Physics. Recurrent topics in S. Bollaert's work include Semiconductor Quantum Structures and Devices (65 papers), Semiconductor materials and devices (49 papers) and Advancements in Semiconductor Devices and Circuit Design (48 papers). S. Bollaert is often cited by papers focused on Semiconductor Quantum Structures and Devices (65 papers), Semiconductor materials and devices (49 papers) and Advancements in Semiconductor Devices and Circuit Design (48 papers). S. Bollaert collaborates with scholars based in France, Spain and Belgium. S. Bollaert's co-authors include A. Cappy, W. Knap, T. Parenty, M. S. Shur, D. Pardo, J. Mateos, Yannick Roelens, N. Dyakonova, T. González and A. Shchepetov and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. Bollaert

95 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Bollaert France 22 1.5k 1.3k 331 276 256 99 1.8k
J. Łusakowski Poland 18 1.0k 0.7× 822 0.6× 332 1.0× 273 1.0× 210 0.8× 117 1.3k
A. E. Zhukov Russia 20 1.2k 0.8× 1.3k 1.0× 99 0.3× 119 0.4× 94 0.4× 64 1.5k
D. K. Maude France 15 600 0.4× 659 0.5× 259 0.8× 102 0.4× 122 0.5× 49 1.0k
G. R. Aǐzin United States 21 609 0.4× 609 0.5× 142 0.4× 485 1.8× 66 0.3× 53 944
Sergey Kovalev Germany 18 860 0.6× 908 0.7× 114 0.3× 307 1.1× 141 0.6× 74 1.4k
J. R. Söderström United States 15 1.2k 0.8× 1.2k 0.9× 124 0.4× 83 0.3× 83 0.3× 26 1.4k
P. Shiktorov France 19 849 0.6× 774 0.6× 132 0.4× 55 0.2× 259 1.0× 126 1.1k
Cihan Kurter United States 13 601 0.4× 684 0.5× 230 0.7× 363 1.3× 612 2.4× 22 1.3k
Kaveh Delfanazari United Kingdom 18 657 0.4× 375 0.3× 334 1.0× 174 0.6× 453 1.8× 53 974
E. Starikov France 19 835 0.6× 762 0.6× 126 0.4× 51 0.2× 262 1.0× 124 1.0k

Countries citing papers authored by S. Bollaert

Since Specialization
Citations

This map shows the geographic impact of S. Bollaert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bollaert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bollaert more than expected).

Fields of papers citing papers by S. Bollaert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bollaert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bollaert. The network helps show where S. Bollaert may publish in the future.

Co-authorship network of co-authors of S. Bollaert

This figure shows the co-authorship network connecting the top 25 collaborators of S. Bollaert. A scholar is included among the top collaborators of S. Bollaert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Bollaert. S. Bollaert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vasallo, B. G., et al.. (2018). Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis. Journal of Applied Physics. 123(3). 1 indexed citations
2.
Jaouad, Abdelatif, et al.. (2016). Ultra-thin body InAs-MOSFETs with elevated source/drain contacts. 5. 1–2. 1 indexed citations
3.
Dehzangi, Arash, et al.. (2016). Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length. Journal of Electronic Materials. 46(2). 782–789. 5 indexed citations
4.
5.
Roelens, Yannick, et al.. (2012). Lattice matched and Pseudomorphic InGaAs MOSHEMT with f<inf>T</inf> of 200GHz. HAL (Le Centre pour la Communication Scientifique Directe). 44–47. 1 indexed citations
6.
Olivier, A., Yannick Roelens, L. Desplanque, et al.. (2010). High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply. 162–165. 1 indexed citations
7.
Íñiguez-de-la-Torre, I., T. González, D. Pardo, et al.. (2009). Frequency response of T-shaped Three Branch Junctions as Mixers and Detectors. HAL (Le Centre pour la Communication Scientifique Directe). 168–171. 2 indexed citations
8.
Maher, Hassan, et al.. (2007). A 200-GHz True E-Mode Low-Noise MHEMT. IEEE Transactions on Electron Devices. 54(7). 1626–1632. 7 indexed citations
9.
Fatimy, A. El, F. Teppe, N. Dyakonova, et al.. (2006). Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors. Applied Physics Letters. 89(13). 157 indexed citations
10.
Hackens, B., C. Gustin, X. Wallart, et al.. (2006). Dwell-time related saturation of phase coherence in ballistic quantum dots. Physica E Low-dimensional Systems and Nanostructures. 34(1-2). 511–514.
11.
Hackens, B., Frederico Martins, T. Ouisse, et al.. (2006). Imaging and controlling electron transport inside a quantum ring. Nature Physics. 2(12). 826–830. 60 indexed citations
12.
Hackens, B., Loïk Gence, C. Gustin, et al.. (2006). Tunable rectification and slope reversals in the I–V characteristics of ballistic nanojunctions. Physica E Low-dimensional Systems and Nanostructures. 34(1-2). 515–518. 1 indexed citations
13.
Łusakowski, J., F. Teppe, N. Dyakonova, et al.. (2005). Terahertz generation by plasma waves in nanometer gate high electron mobility transistors. physica status solidi (a). 202(4). 656–659. 6 indexed citations
14.
Dyakonova, N., F. Teppe, J. Łusakowski, et al.. (2005). Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. Journal of Applied Physics. 97(11). 56 indexed citations
15.
Hackens, B., C. Gustin, X. Wallart, et al.. (2005). Dwell-Time-Limited Coherence in Open Quantum Dots. Physical Review Letters. 94(14). 146802–146802. 43 indexed citations
16.
González, T., et al.. (2004). Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications. IEEE Transactions on Electron Devices. 51(4). 521–528. 23 indexed citations
17.
Zaknoune, M., et al.. (2003). 60-GHz high power performance In/sub 0.35/Al/sub 0.65/As-In/sub 0-35/Ga/sub 0.65/As metamorphic HEMTs on GaAs. IEEE Electron Device Letters. 24(12). 724–726. 15 indexed citations
18.
Bollaert, S., Y. Cordier, M. Zaknoune, et al.. (2000). The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter. Solid-State Electronics. 44(6). 1021–1027. 26 indexed citations
19.
Zaknoune, M., Y. Cordier, S. Bollaert, et al.. (1999). 0.1 µm high performance metamorphicIn 0.32 Al 0.68 As/In 0.33 Ga 0.67 As HEMT on GaAsusing inverse step InAlAs buffer. Electronics Letters. 35(19). 1670–1671. 7 indexed citations
20.
Cordier, Y., et al.. (1998). MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate. Applied Surface Science. 123-124. 734–737. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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