H. Thomas

524 total citations
46 papers, 411 citations indexed

About

H. Thomas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, H. Thomas has authored 46 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 13 papers in Condensed Matter Physics. Recurrent topics in H. Thomas's work include Semiconductor materials and devices (22 papers), Semiconductor materials and interfaces (19 papers) and Semiconductor Quantum Structures and Devices (19 papers). H. Thomas is often cited by papers focused on Semiconductor materials and devices (22 papers), Semiconductor materials and interfaces (19 papers) and Semiconductor Quantum Structures and Devices (19 papers). H. Thomas collaborates with scholars based in United Kingdom, United States and France. H. Thomas's co-authors include Jikui Luo, D. V. Morgan, R.H. Wallis, D.I. Westwood, I.D. Henning, Stewart Bland, R. H. Williams, Rachel Williams, S. A. Clark and Daniel W. Davies and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

H. Thomas

36 papers receiving 383 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Thomas United Kingdom 12 358 275 96 65 32 46 411
J. C. P. Chang United States 14 378 1.1× 444 1.6× 52 0.5× 163 2.5× 47 1.5× 28 512
S. Takamiya Japan 14 544 1.5× 372 1.4× 74 0.8× 75 1.2× 36 1.1× 87 585
Yasuo Okuno Japan 12 438 1.2× 392 1.4× 55 0.6× 213 3.3× 28 0.9× 33 515
L.P. Sadwick United States 10 234 0.7× 186 0.7× 36 0.4× 65 1.0× 40 1.3× 54 291
D.C. Radulescu United States 12 347 1.0× 315 1.1× 62 0.6× 48 0.7× 31 1.0× 23 395
H. Shen United States 12 499 1.4× 552 2.0× 93 1.0× 110 1.7× 53 1.7× 22 624
M. Otsubo Japan 13 416 1.2× 279 1.0× 67 0.7× 90 1.4× 43 1.3× 60 477
Chantal Fontaine France 12 238 0.7× 246 0.9× 62 0.6× 95 1.5× 80 2.5× 32 356
A. P. Silin Russia 11 147 0.4× 256 0.9× 60 0.6× 149 2.3× 34 1.1× 34 373
J. Singh United States 9 286 0.8× 417 1.5× 167 1.7× 89 1.4× 34 1.1× 16 505

Countries citing papers authored by H. Thomas

Since Specialization
Citations

This map shows the geographic impact of H. Thomas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Thomas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Thomas more than expected).

Fields of papers citing papers by H. Thomas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Thomas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Thomas. The network helps show where H. Thomas may publish in the future.

Co-authorship network of co-authors of H. Thomas

This figure shows the co-authorship network connecting the top 25 collaborators of H. Thomas. A scholar is included among the top collaborators of H. Thomas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Thomas. H. Thomas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thomas, H., A. Ashok Kumar, S. Kaleemulla, & V. Rajagopal Reddy. (2025). Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction. Solid-State Electronics. 225. 109074–109074. 1 indexed citations
2.
Luo, Jikui, H. Thomas, & N.M. Pearsall. (2003). Electrical characterization of 1 MeV electron irradiated ITO/InP structures. 589–592. 1 indexed citations
3.
Christou, A., et al.. (2003). Performances of laser-processed HEMTs with AlAs-nGaAs superlattice donor layers. IEEE MTT-S International Microwave Symposium digest. 24. 483–486.
4.
Thomas, H., et al.. (1999). Reactive ion etching of gallium nitride by methylchloride/hydrogen. Electronics Letters. 35(8). 673–675.
5.
Luo, Jikui, H. Thomas, D. V. Morgan, & D.I. Westwood. (1996). Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing. Journal of Applied Physics. 79(7). 3622–3629. 37 indexed citations
6.
Morgan, D. V., et al.. (1995). AlGaInP LEDs using reactive thermally evaporatedtransparent conducting indium tin oxide (ITO). Electronics Letters. 31(19). 1691–1692. 10 indexed citations
7.
8.
Morgan, D. V., et al.. (1995). AlGaInP LEDs using reactive thermally evaporatedtransparent conducting indium tin oxide (ITO). Electronics Letters. 31(25). 2210–2212. 30 indexed citations
9.
Thomas, H. & Jikui Luo. (1993). Admittance spectroscopy of defects in electron-irradiated indium phosphide. Semiconductor Science and Technology. 8(4). 608–610. 1 indexed citations
10.
Luo, Jikui & H. Thomas. (1993). Transport properties of indium tin oxide/p-InP structures. Applied Physics Letters. 62(7). 705–707. 13 indexed citations
11.
Thomas, H. & Jikui Luo. (1993). Electrical characterization of ITO/p-InP heterostructures. Journal of Applied Physics. 73(6). 3055–3061. 13 indexed citations
12.
Luo, Jikui & H. Thomas. (1993). The influence of indium tin oxide deposition on the transport properties at InP junctions. Journal of Electronic Materials. 22(11). 1311–1316. 10 indexed citations
13.
Thomas, H. & Jikui Luo. (1992). Effect of plasma pre-treatment on Au/p-InP schottky diodes. Solid-State Electronics. 35(10). 1401–1407. 8 indexed citations
14.
Luo, Jikui, H. Thomas, & N.M. Pearsall. (1992). Induced defects in plasma-etched p-type indium phosphide. Semiconductor Science and Technology. 7(1). 168–171. 1 indexed citations
15.
Luo, Jikui, et al.. (1992). Deep levels in MOCVD AI 0.48 In 0.52 As/InP. Electronics Letters. 28(8). 797–799. 13 indexed citations
16.
Rezazadeh, A.A., et al.. (1991). The long‐term stability ofn‐AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. Quality and Reliability Engineering International. 7(4). 331–337. 4 indexed citations
17.
Thomas, H., et al.. (1990). Deep level transient spectroscopy of n -AlGaAs/GaAs high electron mobility transistors. Electronics Letters. 26(3). 159–160. 2 indexed citations
18.
Ladbrooke, P.H., et al.. (1987). Detection of EL2 in Undoped LEC GaAs by a Novel Variation of Photo-Induced Transient Spectroscopy. Japanese Journal of Applied Physics. 26(8R). 1388–1388. 3 indexed citations
19.
Wallis, R.H., et al.. (1986). Surface influence on the conductance DLTS spectra of GaAs MESFET's. IEEE Transactions on Electron Devices. 33(10). 1447–1453. 78 indexed citations
20.
Henning, I.D. & H. Thomas. (1981). Minority carrier traps in epitaxial gallium arsenide phosphide. Journal of Electronic Materials. 10(2). 361–377. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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