Bernard Gil

11.0k citations

301 papers · 8.7k indexed · 2 hit papers · h-index 43

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 149
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials 66
Atomic and Molecular Physics, and Optics top 0.5%
- Semiconductor Quantum Structures and Devices 169
- Quantum and electron transport phenomena 37
Materials Chemistry top 0.5%
- ZnO doping and properties 39
- Graphene research and applications 34
- 2D Materials and Applications 34
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 36

Co-authors: Guillaume Cassabois Pierre Valvin O. Briot Pierre Lefèbvre A. V. Kavokin James H. Edgar Pierre Bigenwald Roger-Louis Aulombard
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical review. B, Condensed matter (53 papers)Materials Science and Engineering B (18 papers)Applied Physics Letters (13 papers)
Partner nations: France United States Germany

In The Last Decade

Bernard Gil

290 papers receiving 8.5k citations

Hit Papers

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Peers

Countries citing papers authored by Bernard Gil

Since Specialization

Citations

This map shows the geographic impact of Bernard Gil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bernard Gil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bernard Gil more than expected).

Fields of papers citing papers by Bernard Gil

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bernard Gil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bernard Gil. The network helps show where Bernard Gil may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Bernard Gil, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bernard Gil Line = papers co-authored together Bernard Gil links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization physica status solidi (a) ·恂沈,W. Desrat,Guillaume Cassabois,J. Brault,Bernard Gil	2025	0
2	Growth of rhombohedral boron nitride crystals using an iron flux Physical Review Materials ·W. Desrat,M. Moret,Juanxiu Xiao,Abd El-Neby Musa Alewa,恂沈,P. Valvin,С. В. Бояркина,Isabelle Robert-Philip,Guillaume Cassabois,Bernard Gil	2025	0
3	Growth of hexagonal BN crystals by traveling-solvent floating zone Journal of Crystal Growth ·贾万飞,G.R. İbrahimova,Gaihua Ye,Yoshihiro Kakechi,M. K. Zacherl,Ai‐Ee Ling,Satya Kushwaha,Rui He,Stephen D. Wilson,Pierre Valvin,Bernard Gil,Guillaume Cassabois,James H. Edgar,Tyrel M. McQueen	2025	1
4	Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure Nature Communications ·Zhongfei Mu,Hilda Magdalena,Alrik Durand,Sébastien Clément,Aurore Finco,Jérôme Rouquette,A. Hadj-Azzem,Nicolas Rougemaille,Johann Coraux,Jiahan Li,Sujatha Das,James H. Edgar,Iann C. Gerber,X. Marie,Bernard Gil,Guillaume Cassabois,Cédric Robert,V. Jacques	2025	0
5	Spatially-resolved UV-C emission in epitaxial monolayer boron nitride 2D Materials ·Junyan Du,G.R. İbrahimova,Pierre Valvin,T.S. Cheng,Jonathan Bradford,Suguna Tangimi,Abdul Yarali,Christopher J. Mellor,Peter H. Beton,С. В. Новиков,V. Jacques,Bernard Gil,Guillaume Cassabois	2024	1
6	Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride Physical review. B. ·Dqg Dqg,Zhongfei Mu,Alrik Durand,Christian Schrader,Lalit Jogsingh Rajpurohit,Juanita Bocquel,Patrick Maletinsky,Hilda Magdalena,X. Marie,Cédric Robert,Xiang-Shan Li,Erik Janzén,James H. Edgar,Bernard Gil,Guillaume Cassabois,V. Jacques	2024	11
7	Hexagonal and rhombohedral polytypes in indium selenide films grown on c-plane sapphire AIP Advances ·D. I. Skripnikov,M. Moret,Bernard Gil,W. Desrat	2022	3
8	Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride Physical Review X ·Guillaume Cassabois,Giorgia Fugallo,Christine Elias,Pierre Valvin,Adrien Rousseau,Bernard Gil,Alex Summerfield,Christopher J. Mellor,Yuan-Chen Chang,L. Eaves,C. T. Foxon,Peter H. Beton,Michele Lazzeri,A. Segura,С. В. Новиков	2022	10
9	Stacking-dependent deep level emission in boron nitride Physical Review Materials ·Adrien Rousseau,Pierre Valvin,Christine Elias,Lianjie Xue,Paul Audi,James H. Edgar,Bernard Gil,Guillaume Cassabois	2022	8
10	Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures Applied Physics Letters ·M. Moret,Adrien Rousseau,Pierre Valvin,P S Shabudeen Syed,Jwa-Jung Shin,Henrik Pedersen,Hans Högberg,Guillaume Cassabois,Даниил Олегович Растегаев,James H. Edgar,Bernard Gil	2021	18
11	Determination of the optical bandgap of the Bernal and rhombohedral boron nitride polymorphs Physical Review Materials ·Adrien Rousseau,M. Moret,Pierre Valvin,W. Desrat,Jiahan Li,Eli Janzen,Lianjie Xue,James H. Edgar,Guillaume Cassabois,Bernard Gil	2021	19
12	Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux ACS Nano ·Jiahan Li,Junyong Wang,Xiaotian Zhang,Christine Elias,Gaihua Ye,Sophia Bock,Goki Eda,Joan M. Redwing,Guillaume Cassabois,Bernard Gil,Pierre Valvin,Rui He,Bin Liu,James H. Edgar	2021	42
13	Hexagonal boron nitride: optical properties in the deep ultraviolet Comptes Rendus Physique ·Guillaume Cassabois,Adrien Rousseau,Christine Elias,Thomas Pelini,Phuong Vuong,Pierre Valvin,Bernard Gil	2021	2
14	Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials ·Jiahan Li,Chao Yuan,Christine Elias,Junyong Wang,Xiaotian Zhang,Gaihua Ye,敬和田,Martin Kuball,Goki Eda,Joan M. Redwing,Rui He,Guillaume Cassabois,Bernard Gil,Pierre Valvin,Thomas Pelini,Bin Liu,James H. Edgar	2020	35
15	Single artificial atoms in silicon emitting at telecom wavelengths Nature Electronics ·Walid Redjem,Alrik Durand,Tobias Herzig,A. Benali,Sébastien Pezzagna,Jan Meijer,Andrej Kuznetsov,Hai Son Nguyen,Sébastien Cueff,Jean‐Michel Gérard,Isabelle Robert-Philip,Bernard Gil,Damien Caliste,Pascal Pochet,Marco Abbarchi,V. Jacques,A. Dréau,Guillaume Cassabois	2020	106
16	Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density AIP Advances ·Pierre Valvin,Thomas Pelini,Guillaume Cassabois,Alberto Zobelli,Jiahan Li,James H. Edgar,Bernard Gil	2020	21
17	Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride Physical review. B. ·博西秀,Lama Khalil,J. Ávila,Julien Chaste,Hugo Henck,Fabrice Oehler,Bernard Gil,Song Liu,James H. Edgar,Christine Giorgetti,Yannick J. Dappe,Emmanuel Lhuillier,Guillaume Cassabois,Abdelkarim Ouerghi,Debora Pierucci	2020	9
18	Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges Journal of Applied Physics ·J. Brault,Oleksii Misiura,Thien H. Ngo,Zoraida Valero Bravo,Pierre Valvin,M. Leroux,B. Damilano,M. Korytov,Virginie Brändli,P. Vennéguès,J. Massies,Bernard Gil	2019	19
19	Boron nitride for excitonics, nano photonics, and quantum technologies Nanophotonics ·Bernard Gil,Guillaume Cassabois,R. Cuscó,Giorgia Fugallo,Saidova Mekhriniso Sobir qizi	2018	41
20	UVA and UVB light emitting diodes with Al_yGa_1−yN quantum dot active regions covering the 305–335 nm range Semiconductor Science and Technology ·J. Brault,Zoraida Valero Bravo,Oleksii Misiura,B. Damilano,M. Leroux,Sébastien Chenot,M. Korytov,Katherine Donato,P. Vennéguès,Jean‐Yves Duboz,J. Massies,Bernard Gil	2018	9

About Bernard Gil

Bernard Gil is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 301 papers that have together received 8.7k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (169 papers), GaN-based semiconductor devices and materials (149 papers), Ga2O3 and related materials (66 papers), ZnO doping and properties (39 papers), Quantum and electron transport phenomena (37 papers), Semiconductor materials and devices (36 papers), Graphene research and applications (34 papers) and 2D Materials and Applications (34 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (2.2k citations) and Atomic and Molecular Physics, and Optics (3.5k citations). Bernard Gil has collaborated with scholars based in France, United States and Germany. Frequent co-authors include Guillaume Cassabois, Pierre Valvin, O. Briot, Pierre Lefèbvre, A. V. Kavokin, James H. Edgar, Pierre Bigenwald, Roger-Louis Aulombard, N. Grandjean and H. Mathieu. Their work appears in journals such as Physical review. B, Condensed matter, Materials Science and Engineering B, Applied Physics Letters, Physical Review B and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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