I. Daumiller

1.6k citations

41 papers · 1.3k indexed · h-index 16

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 35
Atomic and Molecular Physics, and Optics 16
- Semiconductor Quantum Structures and Devices 15

Co-authors: E. Kohn M. Kunze A. Krost A. Dadgar Martin Neuburger M. Kamp Andrei Vescan K.J. Ebeling
Journals: IEEE Electron Device Letters (6 papers)Electronics Letters (5 papers)Applied Physics Letters (3 papers)Journal of Crystal Growth (3 papers)Microwave and Optical Technology Letters (1 paper)
Partner nations: Germany United States Austria

In The Last Decade

I. Daumiller

41 papers receiving 1.2k citations

Peers

Countries citing papers authored by I. Daumiller

Since Specialization

Citations

This map shows the geographic impact of I. Daumiller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Daumiller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Daumiller more than expected).

Fields of papers citing papers by I. Daumiller

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Daumiller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Daumiller. The network helps show where I. Daumiller may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Daumiller, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Daumiller Line = papers co-authored together I. Daumiller links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes Microelectronics Reliability ·Philippe-Jacques Dubois, Carlo De Santi, 正二〓山, Clemens Ostermaier, I. Daumiller, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	2021	21
2	Resolving alternating stress gradients and dislocation densities across AlxGa1-xN multilayer structures on Si(111) Applied Physics Letters ·Л П Шишкина, Roberto German Saravia Plaza, Johannes Zechner, I. Daumiller, Bernhard Sartory, Werner Ecker, (unknown), R. T. Lechner	2017	4
3	Cross-sectional stress distribution in Al x Ga 1-x N heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction Materials & Design ·Л П Шишкина, (unknown), R. Daniel, Roberto German Saravia Plaza, J. K. Weiss, Amith Darbal, Martin Petrenec, Johannes Zechner, I. Daumiller, Werner Ecker, Bernhard Sartory, (unknown)	2016	11
4	Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications IRIS UNIMORE (University of Modena and Reggio Emilia) ·G. Curatola, M. C. E. Huber, I. Daumiller, 唐雄民, G. Verzellesi	2015	4
5	Technology and characteristics of GaN-based diodes for high-field operation TUbilio (Technical University of Darmstadt) ·K. Mutamba, Oktay Yilmazoglu, C. Sydlo, D. Pavlidis, Salvador Mir, Seth M. Hubbard, Guanghui Zhao, I. Daumiller	2005	1
6	Unstrained InAlN/GaN HEMT structure Martin Neuburger, Tom Zimmermann, E. Kohn, A. Dadgar, F. Schulze, A. Krtschil, Michael Günther, H. W. White, J. Bläsing, A. Krost, I. Daumiller, M. Kunze	2005	7
7	GaN based piezo sensors Martin Neuburger, Tom Zimmermann, Adelina Amorim, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, E. Kohn	2004	5
8	GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology Semiconductor Science and Technology ·Oleg Cojocari, 本山巖, V. V. Ursaki, I. M. Tiginyanu, H.L. Hartnagel, I. Daumiller	2004	13
9	UNSTRAINED InAlN/GaN HEMT STRUCTURE International Journal of High Speed Electronics and Systems ·Martin Neuburger, Tom Zimmermann, E. Kohn, A. Dadgar, F. Schulze, A. Krtschil, Junxian Mao, H. De Witte, 鄭讚植, A. Krost, I. Daumiller, M. Kunze	2004	35
10	P-channel InGaN-HFET structure based on polarization doping Tom Zimmermann, Martin Neuburger, M. Kunze, I. Daumiller, Andrej Denisenko, A. Dadgar, A. Krost, E. Kohn	2004	4
11	Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors Applied Physics Letters ·M. Sağlam, K. Mutamba, Reinhart Buyno, C. Sydlo, H.L. Hartnagel, I. Daumiller	2003	10
12	Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs Microwave and Optical Technology Letters ·Y. Guhel, B. Boudart, Virginie Hoel, Daphné Hung Kung Sow, Christophe Gaquière, Назаров Виктор Викторович, M. A. Poisson, I. Daumiller, E. Kohn	2002	14
13	pH sensors based on wide bandgap semiconductors Andrej Denisenko, A. Aleksov, I. Daumiller, E. Kohn	2002	1
14	The Role of Charge Dipoles in GaN HFET Design Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Neuburger, I. Daumiller, M. Kunze, Tom Zimmermann, B. Jogai, 桂世子山下, J. Sewell, T. Jenkins, A. Dadgar, A. Krost, E. Kohn	2002	5
15	Switching behaviour of GaN-based HFETs: thermal and electronic transients Electronics Letters ·E. Kohn, I. Daumiller, M. Kunze, 桂世子山下, J. Sewell, T. Jenkins	2002	15
16	Current instabilities in GaN-based devices IEEE Electron Device Letters ·I. Daumiller, D. Théron, Christophe Gaquière, Andrei Vescan, 宏司原田, A. Wieszt, H. Leier, R. Vetury, Umesh K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, E. Kohn	2001	127
17	Short-channel AlGaN/GaN HEMTs with 70 nm T-gate Electronics Letters ·Evelina Hägglund, H. Gräbeldinger, Barbara Kühn, F. Scholz, Dianne Garner, Manfred Berroth, I. Daumiller, 久展石川, E. Kohn, H. Schweizer	1999	6
18	Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs IEEE Electron Device Letters ·I. Daumiller, C. Kirchner, M. Kamp, K.J. Ebeling, E. Kohn	1999	147
19	Large signal frequency dispersion of AlGaN/GaNheterostructure fieldeffect transistors Electronics Letters ·E. Kohn, I. Daumiller, P. Schmid, Nam Nguyen, Chanh Nguyen	1999	104
20	High temperature, high voltage operation of diamond Schottky diode Diamond and Related Materials ·Andrei Vescan, I. Daumiller, P. Gluche, Wolfgang Ebert, E. Kohn	1998	64

About I. Daumiller

I. Daumiller is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 41 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (15 papers), Metal and Thin Film Mechanics (10 papers), Ga2O3 and related materials (8 papers), Silicon Carbide Semiconductor Technologies (8 papers), Diamond and Carbon-based Materials Research (5 papers) and Radio Frequency Integrated Circuit Design (4 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (401 citations), Electrical and Electronic Engineering (798 citations), Atomic and Molecular Physics, and Optics (338 citations) and Mechanics of Materials (219 citations). I. Daumiller has collaborated with scholars based in Germany, United States and Austria. Frequent co-authors include E. Kohn, M. Kunze, E. Kohn, A. Krost, A. Dadgar, Martin Neuburger, M. Kamp, Andrei Vescan, K.J. Ebeling and C. Kirchner. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, Journal of Crystal Growth and Microwave and Optical Technology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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