François Jomard
About
In The Last Decade
François Jomard
167 papers receiving 2.7k citations
Peers
Comparison fields: 5 of 58
- Materials Chemistry 2.3k
- Electrical and Electronic Engineering 986
- Electronic, Optical and Magnetic Materials 650
- Mechanics of Materials 587
- Aerospace Engineering 321
Countries citing papers authored by François Jomard
This map shows the geographic impact of François Jomard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by François Jomard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites François Jomard more than expected).
Fields of papers citing papers by François Jomard
This network shows the impact of papers produced by François Jomard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by François Jomard. The network helps show where François Jomard may publish in the future.
Co-authorship network of co-authors of François Jomard
This figure shows the co-authorship network connecting the top 25 collaborators of François Jomard. A scholar is included among the top collaborators of François Jomard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with François Jomard. François Jomard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 2 | |
| 3 | 0 | |
| 4 | 25 | |
| 5 | 10 | |
| 6 | 4 | |
| 7 | 26 | |
| 8 | 36 | |
| 9 | 15 | |
| 10 | 28 | |
| 11 | 最適ドープSrTi 1-x Nb x O 3 における多重ノードレス超伝導ギャップ | 5 |
| 12 | 8 | |
| 13 | 5 | |
| 14 | 3 | |
| 15 | Improving the electrical properties of non-intentionally doped n-GaN by deuteration | 2 |
| 16 | 6 | |
| 17 | 5 | |
| 18 | 3 | |
| 19 | 1 | |
| 20 | 12 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.