M. Barbé

508 total citations
34 papers, 397 citations indexed

About

M. Barbé is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Barbé has authored 34 papers receiving a total of 397 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in M. Barbé's work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (9 papers) and GaN-based semiconductor devices and materials (8 papers). M. Barbé is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (9 papers) and GaN-based semiconductor devices and materials (8 papers). M. Barbé collaborates with scholars based in France, Israel and United States. M. Barbé's co-authors include G. Cohen‐Solal, F. Bailly, J. Chevallier, Cécile Saguy, C. Cytermann, C. Baron, A. Deneuville, D. Ballutaud, R. Kalish and J. E. Butler and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Barbé

31 papers receiving 377 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Barbé France 10 269 244 149 59 58 34 397
Ken Sakuta Japan 11 193 0.7× 333 1.4× 95 0.6× 114 1.9× 83 1.4× 19 403
Tomio Izumi Japan 13 323 1.2× 317 1.3× 129 0.9× 34 0.6× 54 0.9× 43 450
S.-Tong Lee United States 7 168 0.6× 270 1.1× 111 0.7× 20 0.3× 101 1.7× 8 357
D. Ferré France 12 176 0.7× 112 0.5× 194 1.3× 49 0.8× 16 0.3× 32 337
Sun-Ghil Lee South Korea 7 181 0.7× 172 0.7× 103 0.7× 47 0.8× 18 0.3× 16 283
N. L. Andrew United Kingdom 10 186 0.7× 184 0.8× 207 1.4× 155 2.6× 82 1.4× 17 411
S. Shikata Japan 9 158 0.6× 325 1.3× 127 0.9× 21 0.4× 104 1.8× 12 392
J.J. Bacmann France 12 138 0.5× 315 1.3× 188 1.3× 22 0.4× 32 0.6× 24 467
K. Das United States 11 281 1.0× 416 1.7× 158 1.1× 48 0.8× 190 3.3× 30 498
Е. М. Труханов Russia 11 184 0.7× 165 0.7× 196 1.3× 20 0.3× 42 0.7× 56 361

Countries citing papers authored by M. Barbé

Since Specialization
Citations

This map shows the geographic impact of M. Barbé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Barbé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Barbé more than expected).

Fields of papers citing papers by M. Barbé

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Barbé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Barbé. The network helps show where M. Barbé may publish in the future.

Co-authorship network of co-authors of M. Barbé

This figure shows the co-authorship network connecting the top 25 collaborators of M. Barbé. A scholar is included among the top collaborators of M. Barbé based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Barbé. M. Barbé is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mimila‐Arroyo, J., M. Barbé, François Jomard, et al.. (2007). Deuterium passivation of electrically active defects in nonintentionally doped n-GaN. Applied Physics Letters. 90(7). 6 indexed citations
2.
Chevallier, J., Cécile Saguy, R. Kalish, et al.. (2004). Shallow donor induced n-type conductivity in deuterated boron-doped diamond. physica status solidi (a). 201(11). 2444–2450. 16 indexed citations
3.
Chevallier, J., Cécile Saguy, R. Kalish, et al.. (2003). Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers. Nature Materials. 2(7). 482–486. 114 indexed citations
4.
Barbé, M., F. Bailly, J. Chevallier, et al.. (2002). Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs. MRS Proceedings. 719. 1 indexed citations
5.
6.
Theys, B., et al.. (2001). Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy. Semiconductor Science and Technology. 16(9). L53–L56. 8 indexed citations
7.
Mimila‐Arroyo, J., A. Lusson, J. Chevallier, et al.. (2001). Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters. 79(19). 3095–3097. 11 indexed citations
8.
Chevallier, J., et al.. (2000). Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs :Si. Superlattices and Microstructures. 27(5-6). 447–452. 4 indexed citations
9.
Sayah, D., et al.. (1999). Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency. Solid-State Electronics. 43(5). 857–864. 2 indexed citations
10.
Triboulet, R., et al.. (1999). Some fundamentals of the vapor and solution growth of ZnSe and ZnO. Journal of Crystal Growth. 198-199. 968–974. 10 indexed citations
11.
Chevallier, J., et al.. (1999). Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination. Applied Physics Letters. 75(1). 112–114. 21 indexed citations
12.
Mora‐Seró, Iván, V. Muñoz‐Sanjosé, M. Barbé, & R. Triboulet. (1999). Study of the chemically activated sublimation of ZnSe. Journal of Crystal Growth. 197(3). 497–503. 1 indexed citations
13.
Bailly, F., M. Barbé, & G. Cohen‐Solal. (1995). Setting up of misfit dislocations in heteroepitaxial growth and critical thicknesses. Journal of Crystal Growth. 153(3-4). 115–122. 8 indexed citations
14.
Cohen‐Solal, G., F. Bailly, & M. Barbé. (1994). Critical thickness in heteroepitaxial growth of zinc-blende semiconductor compounds. Journal of Crystal Growth. 138(1-4). 68–74. 27 indexed citations
15.
Estève, D., et al.. (1990). Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistor. Journal of Crystal Growth. 101(1-4). 1013–1017. 12 indexed citations
16.
Bailly, F., M. Barbé, & G. Cohen‐Solal. (1988). Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 944. 40–40. 2 indexed citations
17.
Fallahi, Mahmoud, et al.. (1988). Compatibility in heterogeneous integration of a CdTe interdigitated photoconductor with an AlGaAs field-effect transistor. Electronics Letters. 24(19). 1245–1246. 3 indexed citations
18.
Barbé, M., J.E. Bourée, Gilles de Revel, et al.. (1987). Thin film solar cells using impure polycrystalline silicon. Revue de Physique Appliquée. 22(7). 687–694. 6 indexed citations
19.
Cohen‐Solal, G., F. Bailly, & M. Barbé. (1986). Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate. Applied Physics Letters. 49(22). 1519–1521. 70 indexed citations
20.
Barbé, M.. (1966). La pêche aux îles Lofoten. Revue de géographie de Lyon. 41(1). 29–60. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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