M. Barbé

508 citations

34 papers · 397 indexed · h-index 10

Materials Chemistry
- Diamond and Carbon-based Materials Research 6
Condensed Matter Physics
- GaN-based semiconductor devices and materials 8
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 11
Electrical and Electronic Engineering
- Semiconductor materials and devices 9
- Advanced Semiconductor Detectors and Materials 6
- Silicon and Solar Cell Technologies 6
- Chalcogenide Semiconductor Thin Films 6
- Thin-Film Transistor Technologies 5
Geophysics

Co-authors: G. Cohen‐Solal F. Bailly J. Chevallier Cécile Saguy D. Ballutaud J. E. Butler C. Baron R. Kalish
Cited by: Materials Chemistry Condensed Matter Physics Atomic and Molecular Physics, and Optics
Journals: Journal of Crystal Growth (7 papers)Applied Physics Letters (4 papers)physica status solidi (a) (1 paper)
Partner nations: France Israel United States

In The Last Decade

M. Barbé

31 papers receiving 377 citations

Peers

Countries citing papers authored by M. Barbé

Since Specialization

Citations

This map shows the geographic impact of M. Barbé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Barbé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Barbé more than expected).

Fields of papers citing papers by M. Barbé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Barbé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Barbé. The network helps show where M. Barbé may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Barbé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Barbé Line = papers co-authored together M. Barbé links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Deuterium passivation of electrically active defects in nonintentionally doped n-GaN Applied Physics Letters ·J. Mimila‐Arroyo,M. Barbé,François Jomard,J. Chevallier,M.A. di Forte-Poisson,S.L. Delage,C. Dua	2007	6
2	Shallow donor induced n-type conductivity in deuterated boron-doped diamond physica status solidi (a) ·J. Chevallier,Eric Boukobza,Cécile Saguy,R. Kalish,C. Cytermann,F. Jomard,M. Barbé,T. Kociniewski,J. E. Butler,C. Baron,A. Deneuville	2004	16
3	Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers Nature Materials ·Eric Boukobza,J. Chevallier,Cécile Saguy,R. Kalish,D. Ballutaud,M. Barbé,François Jomard,A. Tromson‐Carli,C. Cytermann,J. E. Butler,M. Bernard,C. Baron,A. Deneuville	2003	114
4	Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs MRS Proceedings ·M. Barbé,F. Bailly,J. Chevallier,Santiago Silvestre,Sabah A. Hammad,M. A. Oosterbeek,E. Constant,M. Constant	2002	1
5	Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness Journal of Applied Physics ·J. Mimila‐Arroyo,Eva Caly-Simbou,M. Barbé	2002	6
6	Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures MRS Proceedings ·M. A. Oosterbeek,Santiago Silvestre,Sabah A. Hammad,E. Constant,M. Barbé,J. Chevallier,M. Constant	2002	1
7	Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy Semiconductor Science and Technology ·B. Theys,Eric Boukobza,François Jomard,P. de Mierry,A. Y. Polyakov,M. Barbé	2001	8
8	Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency Solid-State Electronics ·D Guilligan,Taryn Swift,D. Sayah,D. Ballutaud,M. Barbé	1999	2
9	Some fundamentals of the vapor and solution growth of ZnSe and ZnO Journal of Crystal Growth ·R. Triboulet,Juno Gemes,M. Barbé,Ph. Lemasson,Iván Mora‐Seró,V. Muñoz‐Sanjosé	1999	10
10	Study of the chemically activated sublimation of ZnSe Journal of Crystal Growth ·Iván Mora‐Seró,V. Muñoz‐Sanjosé,M. Barbé,R. Triboulet	1999	1
11	Setting up of misfit dislocations in heteroepitaxial growth and critical thicknesses Journal of Crystal Growth ·F. Bailly,M. Barbé,G. Cohen‐Solal	1995	8
12	Distortion in the CdS_1−ySe_y lattices: an example of relaxation in wurtzite compounds Acta Crystallographica Section B Structural Science ·A. Marbeuf,M. Barbé,Alberto Ramos,Claire Levelut,Vrinda Arora	1994	8
13	Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Abdelfettah Barhdadi,S. Sivoththaman,M. Barbé,M. Hamidi,Jean‐Luc Maurice	1994	2
14	Electron-beam-induced current quantitative mapping: application to Si solar cells Materials Science and Engineering B ·Abdelfettah Barhdadi,M. Barbé,A. Riviére,Jean‐Luc Maurice	1994	2
15	Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistor Journal of Crystal Growth ·Mariama Farias de QUEIROZ,優里大塚,D. Estève,Mahmoud Fallahi,榊田典治,Eddy Papais,M. Barbé,G. Cohen‐Solal	1990	12
16	Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·F. Bailly,M. Barbé,G. Cohen‐Solal	1988	2
17	Measurement of minority carrier diffusion length from spectral response of thin film polycrystalline silicon solar cells Solar Cells ·Ravi Anant Kishore,M. Barbé,J.-L. Pastol,Matty Caymax,J.E. Bourée,Gilles de Revel,M. Hamidi	1988	5
18	Thin film solar cells using impure polycrystalline silicon Revue de Physique Appliquée ·M. Hamidi,M. Barbé,J.E. Bourée,Wolfgang Eichholtz,Gilles de Revel,Ravi Anant Kishore,J.-L. Pastol,R. Mertens,Fernando L. Freire-Júnior,Catriona Gray	1987	6
19	Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate Applied Physics Letters ·G. Cohen‐Solal,F. Bailly,M. Barbé	1986	70
20	La pêche aux îles Lofoten Revue de géographie de Lyon ·M. Barbé	1966	1

About M. Barbé

M. Barbé is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 34 papers that have together received 397 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (9 papers), GaN-based semiconductor devices and materials (8 papers), Advanced Semiconductor Detectors and Materials (6 papers), Diamond and Carbon-based Materials Research (6 papers), Silicon and Solar Cell Technologies (6 papers), Chalcogenide Semiconductor Thin Films (6 papers) and Thin-Film Transistor Technologies (5 papers). The work is most often cited by research in Materials Chemistry (244 citations), Condensed Matter Physics (59 citations) and Atomic and Molecular Physics, and Optics (149 citations). M. Barbé has collaborated with scholars based in France, Israel and United States. Frequent co-authors include G. Cohen‐Solal, F. Bailly, J. Chevallier, Cécile Saguy, D. Ballutaud, J. E. Butler, C. Baron, R. Kalish, C. Cytermann and A. Deneuville. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, physica status solidi (a), Acta Crystallographica Section B Structural Science and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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