J.-L. Reverchon

441 total citations
34 papers, 345 citations indexed

About

J.-L. Reverchon is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J.-L. Reverchon has authored 34 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 17 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J.-L. Reverchon's work include GaN-based semiconductor devices and materials (17 papers), Ga2O3 and related materials (13 papers) and Advanced Semiconductor Detectors and Materials (12 papers). J.-L. Reverchon is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Ga2O3 and related materials (13 papers) and Advanced Semiconductor Detectors and Materials (12 papers). J.-L. Reverchon collaborates with scholars based in France, Italy and Australia. J.-L. Reverchon's co-authors include Jean‐Yves Duboz, N. Grandjean, A. Dussaigne, B. Damilano, J. Massies, J.-Y. Duboz, Mauro Mosca, V. Berger, Mathieu Carras and X. Marcadet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

J.-L. Reverchon

33 papers receiving 332 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.-L. Reverchon France 10 161 157 135 132 113 34 345
M. Razeghi France 10 266 1.7× 151 1.0× 144 1.1× 191 1.4× 246 2.2× 32 471
Kamran Forghani United States 15 274 1.7× 138 0.9× 202 1.5× 279 2.1× 228 2.0× 44 531
Z. F. Li China 8 230 1.4× 111 0.7× 211 1.6× 56 0.4× 87 0.8× 17 347
Bruno Guillet France 10 110 0.7× 115 0.7× 113 0.8× 113 0.9× 57 0.5× 33 266
T. Wethkamp Germany 11 244 1.5× 127 0.8× 181 1.3× 186 1.4× 193 1.7× 14 435
R. Kruszka Poland 10 223 1.4× 70 0.4× 134 1.0× 127 1.0× 99 0.9× 47 333
S. Hasenöhrl Slovakia 11 238 1.5× 84 0.5× 163 1.2× 138 1.0× 206 1.8× 82 412
R. E. Sherriff United States 10 197 1.2× 103 0.7× 205 1.5× 45 0.3× 112 1.0× 18 348
J. Woodward United States 12 182 1.1× 132 0.8× 157 1.2× 166 1.3× 129 1.1× 35 376
X. C. Wang Singapore 9 370 2.3× 76 0.5× 261 1.9× 113 0.9× 387 3.4× 9 507

Countries citing papers authored by J.-L. Reverchon

Since Specialization
Citations

This map shows the geographic impact of J.-L. Reverchon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-L. Reverchon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-L. Reverchon more than expected).

Fields of papers citing papers by J.-L. Reverchon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-L. Reverchon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-L. Reverchon. The network helps show where J.-L. Reverchon may publish in the future.

Co-authorship network of co-authors of J.-L. Reverchon

This figure shows the co-authorship network connecting the top 25 collaborators of J.-L. Reverchon. A scholar is included among the top collaborators of J.-L. Reverchon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.-L. Reverchon. J.-L. Reverchon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reverchon, J.-L., et al.. (2025). MBE growth and properties of GaInAsSb alloys deep inside the miscibility gap. Journal of Crystal Growth. 657. 128107–128107.
2.
Pérez, Jean-Philippe, et al.. (2025). Minority carrier lifetime and operating voltage dependence on the barrier layer thickness in nBn infrared photodetectors. Infrared Physics & Technology. 148. 105846–105846. 1 indexed citations
3.
Maia, J.M., Giacomo Badano, Christophe Licitra, et al.. (2022). Revisiting the Fabry–Perot reflectivity method for mid-infrared optical index measurement: case study of InGaAs, AlInAs, and InP. Applied Optics. 61(14). 4079–4079. 3 indexed citations
4.
Virmontois, Cédric, O. Gilard, A. Bardoux, et al.. (2021). Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAs. IEEE Transactions on Nuclear Science. 68(5). 770–776. 2 indexed citations
5.
Boutillier, Mathieu, et al.. (2017). Evaluation of InGaAS array detector suitability to space environment. 7 indexed citations
6.
Duboz, Jean‐Yves, Éric Frayssinet, Sébastien Chenot, J.-L. Reverchon, & Mourad Idir. (2013). X-ray detectors based on GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8625. 86251W–86251W. 3 indexed citations
7.
Reverchon, J.-L., Gaëlle Lehoucq, E. Costard, et al.. (2011). Performances and reliability tests of AlGaN based focal plane array for deep-UV imaging. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8176. 817619–817619. 2 indexed citations
8.
Reverchon, J.-L., et al.. (2010). 2D label-free imaging of resonant grating biochips in ultraviolet. Optics Express. 18(11). 11472–11472. 10 indexed citations
9.
Allibe, J., Eric Jacquet, I. C. Infante, et al.. (2010). Optical properties of integrated multiferroic BiFeO3 thin films for microwave applications. Applied Physics Letters. 96(18). 49 indexed citations
10.
Reverchon, J.-L., S. Bansropun, E. Costard, et al.. (2009). First demonstration and performance of AlGaN based focal plane array for deep-UV imaging. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7474. 74741G–74741G. 5 indexed citations
11.
Reverchon, J.-L., et al.. (2008). Dynamics of AlGaN based detectors in the deep-UV. Solid-State Electronics. 52(5). 795–800. 6 indexed citations
12.
Duboz, Jean‐Yves, N. Grandjean, A. Dussaigne, et al.. (2006). Solar blind AlGaN photodetectors with a very high spectral selectivity. The European Physical Journal Applied Physics. 33(1). 5–7. 5 indexed citations
13.
Reverchon, J.-L., et al.. (2006). AlGaN-Based Linear Array for UV Solar-Blind Imaging From 240 to 280 nm. IEEE Sensors Journal. 6(4). 957–963. 30 indexed citations
14.
Carras, Mathieu, et al.. (2006). Generation–recombination reduction in InAsSb photodiodes. Semiconductor Science and Technology. 21(12). 1720–1723. 9 indexed citations
15.
Hirsch, Lionel, Pascal Tardy, Guillaume Wantz, et al.. (2005). Light-ion beam for microelectronic applications. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 240(1-2). 265–270. 4 indexed citations
16.
Reverchon, J.-L., et al.. (2003). Design and fabrication of infrared detectors based on lattice-matched InAs0.91Sb0.09 on GaSb. Physica E Low-dimensional Systems and Nanostructures. 20(3-4). 519–522. 8 indexed citations
17.
Vinter, B., et al.. (2003). Optimization, design and fabrication of a non-cryogenic quantum infrared detector. Comptes Rendus Physique. 4(10). 1103–1108. 2 indexed citations
18.
Duboz, Jean‐Yves, J.-L. Reverchon, B. Damilano, et al.. (2002). Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation. Journal of Applied Physics. 92(9). 5602–5604. 29 indexed citations
19.
Reverchon, J.-L., F. Huet, M. A. Poisson, et al.. (2001). Photoconductance measurements and Stokes shift in InGaN alloys. Materials Science and Engineering B. 82(1-3). 197–199. 4 indexed citations
20.
Duboz, Jean‐Yves, J.-L. Reverchon, B. Damilano, et al.. (2001). High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si. physica status solidi (a). 188(1). 325–328. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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