E.J. Prinz

890 total citations
35 papers, 569 citations indexed

About

E.J. Prinz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, E.J. Prinz has authored 35 papers receiving a total of 569 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in E.J. Prinz's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Advanced Memory and Neural Computing (13 papers). E.J. Prinz is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Advanced Memory and Neural Computing (13 papers). E.J. Prinz collaborates with scholars based in United States, India and Canada. E.J. Prinz's co-authors include James C. Sturm, Peter Schwartz, C. W. Magee, P.M. Garone, X. Xiao, Hari C. Manoharan, C.T. Swift, Jane Yater, V. Venkataraman and M. Sadd and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

E.J. Prinz

33 papers receiving 534 citations

Peers

E.J. Prinz
T. Ohzone Japan
H.I. Hanafi United States
S. Tyagi United States
Chenming Hu United States
S. Chakravarthi United States
Tai Satô Japan
Suresh Uppal United Kingdom
M. Yoshimi Japan
A. Chou United States
C. Vizioz France
T. Ohzone Japan
E.J. Prinz
Citations per year, relative to E.J. Prinz E.J. Prinz (= 1×) peers T. Ohzone

Countries citing papers authored by E.J. Prinz

Since Specialization
Citations

This map shows the geographic impact of E.J. Prinz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.J. Prinz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.J. Prinz more than expected).

Fields of papers citing papers by E.J. Prinz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.J. Prinz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.J. Prinz. The network helps show where E.J. Prinz may publish in the future.

Co-authorship network of co-authors of E.J. Prinz

This figure shows the co-authorship network connecting the top 25 collaborators of E.J. Prinz. A scholar is included among the top collaborators of E.J. Prinz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.J. Prinz. E.J. Prinz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prinz, E.J.. (2007). Materials Challenges in Automotive Embedded Non-Volatile Memories. MRS Proceedings. 997. 1 indexed citations
2.
Prinz, E.J.. (2006). The zen of nonvolatile memories. 815–815. 5 indexed citations
3.
Yater, Jane, et al.. (2006). 90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage. 52. 60–61. 5 indexed citations
4.
Rao, R. A., M. Sadd, C.T. Swift, et al.. (2005). Silicon nanocrystals: from coulomb blockade to memory arrays. 290–292. 4 indexed citations
5.
Oldham, Timothy R., et al.. (2005). Effects of heavy ion exposure on nanocrystal nonvolatile memory. 39–42.
6.
Oldham, Timothy R., et al.. (2005). Effects of heavy ion exposure on nanocrystal nonvolatile memory. IEEE Transactions on Nuclear Science. 52(6). 2366–2371. 12 indexed citations
7.
Oldham, Timothy R., et al.. (2004). Heavy Ion Testing of Freescale Nano-Crystal Nonvolatile Memory.
8.
Rao, R. A., M. Sadd, C.T. Swift, et al.. (2004). Silicon nanocrystal based memory devices for NVM and DRAM applications. Solid-State Electronics. 48(9). 1463–1473. 66 indexed citations
9.
Rao, R. A., M. Sadd, C.T. Swift, et al.. (2003). Hot Carrier Injection/Fowler Nordheim Erase Silicon Nanocrystal Memory Cell. 1 indexed citations
10.
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Sharma, Mohit, et al.. (2002). An ESD protection scheme for deep sub-micron ULSI circuits. 85–86. 2 indexed citations
13.
14.
Venkataraman, V., et al.. (1996). Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping. IEEE Transactions on Electron Devices. 43(3). 457–466. 42 indexed citations
15.
Venkataraman, V., et al.. (1993). Comprehensive study of lateral and vertical current transport in Si/ Si1-xGex/Si HBT's. 87–90. 3 indexed citations
16.
Prinz, E.J., Xian Xiao, Peter Schwartz, & James C. Sturm. (1992). A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic. IEEE Transactions on Electron Devices. 39(11). 2636–2637. 1 indexed citations
17.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, et al.. (1992). High quantum efficiency photoluminescence from localized excitons in Si1−xGex. Applied Physics Letters. 60(25). 3174–3176. 57 indexed citations
18.
Prinz, E.J., P.M. Garone, Peter Schwartz, X. Xiao, & James C. Sturm. (1991). The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors. IEEE Electron Device Letters. 12(2). 42–44. 83 indexed citations
19.
Prinz, E.J., et al.. (1991). Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors. IEEE Electron Device Letters. 12(4). 163–165. 4 indexed citations
20.
Sturm, James C., E.J. Prinz, P.M. Garone, & Peter Schwartz. (1989). Band-gap shifts in silicon-germanium heterojunction bipolar transistors. Applied Physics Letters. 54(26). 2707–2709. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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