E. H. C. Parker

2.3k total citations
144 papers, 1.8k citations indexed

About

E. H. C. Parker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, E. H. C. Parker has authored 144 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 117 papers in Electrical and Electronic Engineering, 65 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in E. H. C. Parker's work include Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (66 papers) and Semiconductor Quantum Structures and Devices (43 papers). E. H. C. Parker is often cited by papers focused on Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (66 papers) and Semiconductor Quantum Structures and Devices (43 papers). E. H. C. Parker collaborates with scholars based in United Kingdom, Germany and Belgium. E. H. C. Parker's co-authors include T. E. Whall, R. A. A. Kubiak, O. A. Mironov, S. M. Newstead, M. Myronov, T. J. Grasby, D. R. Leadley, P. J. Phillips, David W. Smith and S. Gardelis and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

E. H. C. Parker

138 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. H. C. Parker United Kingdom 24 1.5k 924 516 384 126 144 1.8k
T. E. Whall United Kingdom 23 1.6k 1.0× 1.0k 1.1× 512 1.0× 350 0.9× 83 0.7× 161 1.9k
Michiharu Tabe Japan 24 1.4k 1.0× 766 0.8× 600 1.2× 481 1.3× 194 1.5× 105 1.7k
L. González Spain 23 1.1k 0.7× 1.4k 1.5× 556 1.1× 423 1.1× 40 0.3× 119 1.6k
Hisao Nakashima Japan 19 965 0.7× 1.0k 1.1× 333 0.6× 184 0.5× 148 1.2× 116 1.3k
H. Jorke Germany 18 1.3k 0.9× 948 1.0× 533 1.0× 207 0.5× 159 1.3× 55 1.5k
David V. Forbes United States 18 1.1k 0.7× 973 1.1× 540 1.0× 249 0.6× 107 0.8× 139 1.3k
R.N. Thomas United States 22 1.0k 0.7× 618 0.7× 416 0.8× 190 0.5× 115 0.9× 47 1.3k
H. Kibbel Germany 30 2.3k 1.6× 1.8k 2.0× 1.2k 2.4× 467 1.2× 212 1.7× 158 2.9k
K. C. Hsieh United States 24 1.1k 0.8× 1.2k 1.3× 335 0.6× 188 0.5× 58 0.5× 84 1.5k
D.K. Schroder United States 20 1.7k 1.1× 780 0.8× 481 0.9× 242 0.6× 75 0.6× 62 1.8k

Countries citing papers authored by E. H. C. Parker

Since Specialization
Citations

This map shows the geographic impact of E. H. C. Parker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. H. C. Parker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. H. C. Parker more than expected).

Fields of papers citing papers by E. H. C. Parker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. H. C. Parker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. H. C. Parker. The network helps show where E. H. C. Parker may publish in the future.

Co-authorship network of co-authors of E. H. C. Parker

This figure shows the co-authorship network connecting the top 25 collaborators of E. H. C. Parker. A scholar is included among the top collaborators of E. H. C. Parker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. H. C. Parker. E. H. C. Parker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Parker, E. H. C., et al.. (2021). Modeling of external self-excitation and force generation on magnetic nanoparticles inside vitreous cavity. Mathematical Biosciences & Engineering. 18(6). 9381–9393. 2 indexed citations
2.
Hajrasouliha, Amir Reza, et al.. (2019). Magnetic Nanoparticles Localization in Ophthalmologic Surgery. 505–508. 1 indexed citations
3.
Dobbie, A., et al.. (2012). Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process. Applied Physics Express. 5(7). 71301–71301. 9 indexed citations
4.
Norris, David J., I M Ross, A. Dobbie, et al.. (2011). A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology. Journal of Physics Conference Series. 326. 12023–12023. 3 indexed citations
5.
Dobbie, A., M. Myronov, Xuechao Liu, et al.. (2010). Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology. 25(8). 85007–85007. 3 indexed citations
6.
Thomas, S., T. E. Whall, E. H. C. Parker, et al.. (2009). Improved effective mobility extraction in MOSFETs. Solid-State Electronics. 53(12). 1252–1256. 7 indexed citations
7.
Olsen, Sarah H., A.G. O’Neill, Per‐Erik Hellström, et al.. (2008). Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectronic Engineering. 86(3). 218–223. 13 indexed citations
8.
Nicholas, G., T. J. Grasby, E. H. C. Parker, T. E. Whall, & T. Skotnicki. (2005). Impact ionization in strained Si devices. Journal of Applied Physics. 98(10). 5 indexed citations
9.
Morris, R. J. H., D. R. Leadley, R. Hammond, et al.. (2004). Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy. Journal of Applied Physics. 96(11). 6470–6476. 15 indexed citations
10.
Myronov, M., et al.. (2002). Mobility spectrum computational analysis using a maximum entropy approach. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics. 66(3). 36705–36705. 60 indexed citations
11.
Braithwaite, G., et al.. (2000). Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor. Microelectronic Engineering. 51-52. 541–546. 5 indexed citations
12.
Alderman, Byron, et al.. (1999). Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's. IEEE Transactions on Electron Devices. 46(7). 1484–1486. 18 indexed citations
13.
Barradas, N.P., Andrew P. Knights, C. Jeynes, et al.. (1999). High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms. Physical review. B, Condensed matter. 59(7). 5097–5105. 26 indexed citations
14.
Braithwaite, G., et al.. (1997). Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases. Journal of Applied Physics. 81(10). 6853–6856. 10 indexed citations
15.
Tang, Y. S., S. Nilsson, B. Dietrich, et al.. (1996). Elastic strain and enhanced light emission in dry etched Si/Si1-xGex quantum dots. Journal of Electronic Materials. 25(2). 287–291. 9 indexed citations
16.
Mironov, O. A., et al.. (1996). Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures. Applied Physics Letters. 69(7). 960–962. 7 indexed citations
17.
Başaran, E., et al.. (1995). Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon. Journal of Crystal Growth. 157(1-4). 109–112. 12 indexed citations
18.
Whall, T. E., et al.. (1993). Low-temperature transport in Si:Sb ultra-thin doping layers. Journal of Physics Condensed Matter. 5(14). L201–L206. 4 indexed citations
19.
Kubiak, R. A. A., et al.. (1992). Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy. Journal of Applied Physics. 71(1). 118–125. 27 indexed citations
20.
Kubiak, R. A. A., S. M. Newstead, Adrian R. Powell, et al.. (1991). The “Computer-Aided Epitaxy” Si:MBE-Control System. MRS Proceedings. 220. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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