A. Dobbie

714 total citations
38 papers, 536 citations indexed

About

A. Dobbie is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Dobbie has authored 38 papers receiving a total of 536 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in A. Dobbie's work include Semiconductor Quantum Structures and Devices (21 papers), Semiconductor materials and devices (16 papers) and Photonic and Optical Devices (14 papers). A. Dobbie is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Semiconductor materials and devices (16 papers) and Photonic and Optical Devices (14 papers). A. Dobbie collaborates with scholars based in United Kingdom, Belgium and Slovakia. A. Dobbie's co-authors include D. R. Leadley, M. Myronov, Vishal Ajit Shah, Van‐Huy Nguyen, R. J. H. Morris, E. H. C. Parker, M. Prest, T. E. Whall, T Walther and Xuechao Liu and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Dobbie

35 papers receiving 526 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Dobbie United Kingdom	13	449	358	143	97	22	38	536
Jean-Michel Hartmann France	12	380 0.8×	258 0.7×	84 0.6×	104 1.1×	10 0.5×	31	424
M. Groenert United States	13	570 1.3×	430 1.2×	127 0.9×	129 1.3×	28 1.3×	19	607
Costanza Lucia Manganelli Italy	12	485 1.1×	340 0.9×	135 0.9×	119 1.2×	20 0.9×	32	574
Richard Jefferies United Kingdom	9	405 0.9×	227 0.6×	145 1.0×	77 0.8×	21 1.0×	29	465
Martyna Grydlik Austria	17	545 1.2×	598 1.7×	240 1.7×	307 3.2×	16 0.7×	28	721
R.J. Capik United States	11	362 0.8×	274 0.8×	42 0.3×	38 0.4×	14 0.6×	24	412
Y.–H. Zhang United States	11	309 0.7×	291 0.8×	28 0.2×	113 1.2×	29 1.3×	33	385
Y.-H. Zhang United States	10	373 0.8×	333 0.9×	39 0.3×	154 1.6×	24 1.1×	19	459
D. D. Lofgreen United States	14	482 1.1×	389 1.1×	41 0.3×	104 1.1×	25 1.1×	46	561
Kazuhito Furuya Japan	13	658 1.5×	498 1.4×	83 0.6×	50 0.5×	34 1.5×	94	764

Countries citing papers authored by A. Dobbie

Since Specialization

Citations

This map shows the geographic impact of A. Dobbie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Dobbie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Dobbie more than expected).

Fields of papers citing papers by A. Dobbie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Dobbie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Dobbie. The network helps show where A. Dobbie may publish in the future.

Co-authorship network of co-authors of A. Dobbie

This figure shows the co-authorship network connecting the top 25 collaborators of A. Dobbie. A scholar is included among the top collaborators of A. Dobbie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Dobbie. A. Dobbie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Morris, R. J. H., et al.. (2017). An origin behind Rashba spin splitting within inverted doped sGe heterostructures. Applied Physics Letters. 110(4). 4 indexed citations

Mironov, O. A., N. d’Ambrumenil, A. Dobbie, et al.. (2016). Fractional Quantum Hall States in a Ge Quantum Well. Physical Review Letters. 116(17). 176802–176802. 11 indexed citations

Morris, R. J. H., O. A. Mironov, Richard Beanland, et al.. (2014). Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well. Applied Physics Letters. 104(13). 13 indexed citations

Prest, M., Mika Prunnila, David Gunnarsson, et al.. (2013). Hole-phonon energy loss rate in boron doped silicon. 213–215. 1 indexed citations

Mironov, O. A., M. Uhlarz, A. Dobbie, et al.. (2013). New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(1). 61–64. 6 indexed citations

Nguyen, Van‐Huy, A. Dobbie, M. Myronov, & D. R. Leadley. (2013). High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics. 114(15). 22 indexed citations

Shah, Vishal Ajit, M. Myronov, A. Dobbie, & D. R. Leadley. (2013). Introduction of Terraces into a Reverse Linearly Graded SiGe Buffer on Si(001) Substrate and Their Effect on the Buffer's Structural Properties. ECS Journal of Solid State Science and Technology. 2(3). Q40–Q44. 1 indexed citations

Dobbie, A., Van‐Huy Nguyen, R. J. H. Morris, et al.. (2012). Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si_0.2Ge_0.8Reverse-Graded Buffers. Journal of The Electrochemical Society. 159(5). H490–H496. 6 indexed citations

Dobbie, A., et al.. (2012). Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process. Applied Physics Express. 5(7). 71301–71301. 9 indexed citations

10.

Dobbie, A., M. Myronov, R. J. H. Morris, et al.. (2012). Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD. 1–2.

11.

Norris, David J., I M Ross, A. Dobbie, et al.. (2011). A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology. Journal of Physics Conference Series. 326. 12023–12023. 3 indexed citations

12.

Nguyen, Van‐Huy, A. Dobbie, M. Myronov, et al.. (2011). Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates. Thin Solid Films. 520(8). 3222–3226. 21 indexed citations

13.

Liu, Xuechao, M. Myronov, A. Dobbie, Van‐Huy Nguyen, & D. R. Leadley. (2011). Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 11010–11010. 1 indexed citations

14.

Ulyanenkov, A., et al.. (2011). High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of Applied Physics. 109(12). 14 indexed citations

15.

Shah, Vishal Ajit, et al.. (2011). Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films. 519(22). 7911–7917. 36 indexed citations

16.

Muhonen, Juha T., M. Prest, Mika Prunnila, et al.. (2011). Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters. 98(18). 8 indexed citations

17.

Simoen, Eddy, Jérôme Mitard, Brice De Jaeger, et al.. (2010). Low-frequency noise in strained and relaxed Ge pMOSFETs. 518. 891–893. 1 indexed citations

18.

Myronov, M., A. Dobbie, Vishal Ajit Shah, et al.. (2010). High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform. Electrochemical and Solid-State Letters. 13(11). H388–H388. 22 indexed citations

19.

Dobbie, A., M. Myronov, Xuechao Liu, et al.. (2010). Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology. 25(8). 85007–85007. 3 indexed citations

20.

Norris, David J., T Walther, A.G. Cullis, et al.. (2010). TEM analysis of Ge-on-Si MOSFET structures with HfO₂dielectric for high performance PMOS device technology. Journal of Physics Conference Series. 209. 12061–12061. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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