Wei-Yip Loh

540 total citations
22 papers, 444 citations indexed

About

Wei-Yip Loh is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Wei-Yip Loh has authored 22 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in Wei-Yip Loh's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Wei-Yip Loh is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Wei-Yip Loh collaborates with scholars based in United States, Singapore and South Korea. Wei-Yip Loh's co-authors include Byung Jin Cho, Goutam Kumar Dalapati, Yi Tong, Prashant Majhi, Raj Jammy, Casey Smith, Jungwoo Oh, Hsing‐Huang Tseng, Anupama Bowonder and Tsu‐Jae King Liu and has published in prestigious journals such as Physical Chemistry Chemical Physics, Journal of Alloys and Compounds and IEEE Transactions on Electron Devices.

In The Last Decade

Wei-Yip Loh

20 papers receiving 425 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wei-Yip Loh United States 10 427 134 90 86 15 22 444
W.Y. Loh Singapore 14 503 1.2× 182 1.4× 147 1.6× 91 1.1× 13 0.9× 36 522
Jose Sanchez-Perez United States 5 327 0.8× 151 1.1× 222 2.5× 122 1.4× 11 0.7× 11 369
Ganesh Samudra Singapore 15 546 1.3× 118 0.9× 64 0.7× 165 1.9× 18 1.2× 33 567
R. Jammy United States 11 414 1.0× 87 0.6× 78 0.9× 104 1.2× 36 2.4× 32 439
Zhongyunshen Zhu Sweden 12 256 0.6× 129 1.0× 96 1.1× 114 1.3× 22 1.5× 30 326
Yiwen Rong United States 9 358 0.8× 224 1.7× 120 1.3× 88 1.0× 9 0.6× 21 383
Benoît Behaghel France 6 257 0.6× 109 0.8× 100 1.1× 83 1.0× 9 0.6× 11 290
Gaurav Thareja United States 11 454 1.1× 159 1.2× 101 1.1× 121 1.4× 14 0.9× 24 466
Arunanshu M. Roy United States 7 357 0.8× 257 1.9× 104 1.2× 110 1.3× 7 0.5× 13 388
Markus Feifel Germany 8 337 0.8× 190 1.4× 78 0.9× 50 0.6× 11 0.7× 17 359

Countries citing papers authored by Wei-Yip Loh

Since Specialization
Citations

This map shows the geographic impact of Wei-Yip Loh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei-Yip Loh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei-Yip Loh more than expected).

Fields of papers citing papers by Wei-Yip Loh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei-Yip Loh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei-Yip Loh. The network helps show where Wei-Yip Loh may publish in the future.

Co-authorship network of co-authors of Wei-Yip Loh

This figure shows the co-authorship network connecting the top 25 collaborators of Wei-Yip Loh. A scholar is included among the top collaborators of Wei-Yip Loh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wei-Yip Loh. Wei-Yip Loh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thomas, Paul M., Abhinav Gaur, Brian Romanczyk, et al.. (2015). Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates. IEEE Transactions on Electron Devices. 62(8). 2450–2456. 9 indexed citations
2.
Hung, P. Y., et al.. (2015). Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy. Applied Spectroscopy. 69(2). 239–242. 3 indexed citations
3.
Cuscó, R., et al.. (2015). Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs. Journal of Alloys and Compounds. 634. 87–93. 5 indexed citations
4.
Hung, P. Y., et al.. (2014). Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping. Physical Chemistry Chemical Physics. 16(14). 6539–6539. 12 indexed citations
5.
Walsh, Lee A., G. Hughes, Conan Weiland, et al.. (2014). Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy. Physical Review Applied. 2(6). 9 indexed citations
6.
Young, Chadwin D., Richard J. Hill, K. Matthews, et al.. (2013). Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In<inf>0.53</inf>Ga<inf>0.47</inf>As nMOSFETs. 6. 1–2. 2 indexed citations
7.
Yang, Rong, He Qian, Junfeng Li, et al.. (2012). Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures. Solid-State Electronics. 80. 55–58. 1 indexed citations
8.
Loh, Wei-Yip, et al.. (2011). Junction contact materials and interfaces in Si channel devices. MRS Bulletin. 36(2). 97–100. 5 indexed citations
9.
Lee, Se‐Hoon, Prashant Majhi, D. Ferrer, et al.. (2011). Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices. 58(9). 2917–2923. 1 indexed citations
10.
Smith, Casey, Wei-Yip Loh, Prashant Majhi, et al.. (2011). Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method. IEEE Electron Device Letters. 32(7). 862–864. 21 indexed citations
11.
Loh, Wei-Yip, Kanghoon Jeon, Chang Yong Kang, et al.. (2010). Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> &#x003E;100 &#x00B5;A/&#x00B5;m. 162–165. 10 indexed citations
12.
Barnett, Joel, Richard J. Hill, Wei-Yip Loh, et al.. (2010). Advanced techniques for achieving ultra-shallow junctions in future CMOS devices. 99. 1–4. 7 indexed citations
13.
Jeon, Kanghoon, Wei-Yip Loh, Pratik Patel, et al.. (2010). Si tunnel transistors with a novel silicided source and 46mV/dec swing. 121–122. 171 indexed citations
14.
Zhang, Yingying, Jungwoo Oh, Shiguang Li, et al.. (2009). Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy. IEEE Transactions on Electron Devices. 56(2). 348–353. 9 indexed citations
15.
16.
Yang, Jianjun, Chunxiang Zhu, Mingfu Li, et al.. (2008). Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics. IEEE Transactions on Electron Devices. 55(8). 2238–2245. 4 indexed citations
17.
Loh, Wei-Yip, et al.. (2007). Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance. IEEE Transactions on Electron Devices. 54(12). 3292–3298. 2 indexed citations
18.
Wang, Xinpeng, Andy Eu-Jin Lim, H.Y. Yu, et al.. (2007). Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices. IEEE Transactions on Electron Devices. 54(11). 2871–2877. 12 indexed citations
19.
Dalapati, Goutam Kumar, et al.. (2007). Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices. IEEE Transactions on Electron Devices. 54(8). 1831–1837. 117 indexed citations
20.
Loh, Wei-Yip, Jungwoo Oh, Chris Smith, et al.. (2006). CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction. 104–105. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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