B. Majkusiak

653 total citations
53 papers, 432 citations indexed

About

B. Majkusiak is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Majkusiak has authored 53 papers receiving a total of 432 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in B. Majkusiak's work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). B. Majkusiak is often cited by papers focused on Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). B. Majkusiak collaborates with scholars based in Poland, United States and Japan. B. Majkusiak's co-authors include Andrzej J. Strojwas, J. Jasiński, Piotr Wiśniewski, A. Jakubowski, K. Iniewski, A. Balasiński, J. Łusakowski, M. Sakowicz, M. Grynberg and Shinya Kano and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

B. Majkusiak

49 papers receiving 408 citations

Peers

B. Majkusiak

EEE

AMPO

EOMM

S. Brus Belgium

P.A. Clifton United Kingdom

Masakatsu Tsuchiaki Japan

R. Jammy United States

Ganesh Samudra Singapore

E. Papandreou Greece

F. Andrieu France

Kong-Beng Thei Taiwan

S. Verdonckt-Vandebroek United States

W.Y. Loh Singapore

S. Brus Belgium

B. Majkusiak

469 ×1.1

EEE

86 ×0.7

AMPO

98 ×1.9

56 ×1.2

14 ×1.6

EOMM

Citations per year, relative to B. Majkusiak B. Majkusiak (= 1×) peers S. Brus

Countries citing papers authored by B. Majkusiak

Since Specialization

Citations

This map shows the geographic impact of B. Majkusiak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Majkusiak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Majkusiak more than expected).

Fields of papers citing papers by B. Majkusiak

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Majkusiak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Majkusiak. The network helps show where B. Majkusiak may publish in the future.

Co-authorship network of co-authors of B. Majkusiak

This figure shows the co-authorship network connecting the top 25 collaborators of B. Majkusiak. A scholar is included among the top collaborators of B. Majkusiak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Majkusiak. B. Majkusiak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wiśniewski, Piotr & B. Majkusiak. (2022). Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures. Materials. 15(8). 2733–2733. 4 indexed citations

Wiśniewski, Piotr, et al.. (2021). Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials. 14(20). 6042–6042. 13 indexed citations

Wiśniewski, Piotr & B. Majkusiak. (2020). Modeling the Current–Voltage Characteristics of Ge₁₋ₓSnₓ Electron–Hole Bilayer TFET With Various Compositions. IEEE Transactions on Electron Devices. 67(7). 2738–2744. 1 indexed citations

Wiśniewski, Piotr & B. Majkusiak. (2018). Modeling the Tunnel Field-Effect Transistor Based on Different Tunneling Path Approaches. IEEE Transactions on Electron Devices. 65(6). 2626–2631. 5 indexed citations

Jasiński, J., B. Majkusiak, Shinya Kano, et al.. (2017). Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers. Microelectronic Engineering. 178. 298–303. 7 indexed citations

Majkusiak, B., et al.. (2017). Simulations of transient processes and characteristics of the nc-MOS structures. Microelectronic Engineering. 178. 173–177. 2 indexed citations

Wiśniewski, Piotr, et al.. (2016). Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10175. 101750F–101750F.

Majkusiak, B., et al.. (2011). Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures. Advanced materials research. 276. 77–85. 2 indexed citations

Majkusiak, B., et al.. (2008). Materiały o dużej stałej dielektrycznej w tranzystorach MOS. Elektronika : konstrukcje, technologie, zastosowania. 49. 96–102. 1 indexed citations

10.

Majkusiak, B., et al.. (2007). Electron mobility and drain current in strained-Si MOSFET. Journal of Telecommunications and Information Technology. 84–87. 6 indexed citations

11.

Majkusiak, B.. (2007). Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current. Journal of Computational Electronics. 6(1-3). 207–210. 3 indexed citations

12.

Majkusiak, B., et al.. (2004). Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers. Journal of Telecommunications and Information Technology. 39–49. 3 indexed citations

13.

Majkusiak, B., et al.. (1999). Theory of the MOS/SOI tunnel diode. Microelectronic Engineering. 48(1-4). 375–378. 1 indexed citations

14.

Majkusiak, B., et al.. (1998). Semiconductor thickness effects in the double-gate SOI MOSFET. IEEE Transactions on Electron Devices. 45(5). 1127–1134. 71 indexed citations

15.

Majkusiak, B., et al.. (1997). Electron energy quantization effects in the very thin film GAA SOI transistor. Microelectronic Engineering. 36(1-4). 379–382. 2 indexed citations

16.

Majkusiak, B., et al.. (1995). Experimental and Theoretical Study of the Amplification and Switching Action in the MISIM Tunnel Transistor. European Solid-State Device Research Conference. 655–658. 1 indexed citations

17.

Majkusiak, B. & Andrzej J. Strojwas. (1993). Influence of oxide thickness nonuniformities on the tunnel current-voltage and capacitance-voltage characteristics of the metal-oxide-semiconductor system. Journal of Applied Physics. 74(9). 5638–5647. 26 indexed citations

18.

Majkusiak, B. & A. Jakubowski. (1990). Very thin oxides in vlsi technology: Properties and device implications. Microelectronics Journal. 21(2). 21–40. 1 indexed citations

19.

Majkusiak, B., et al.. (1988). A new method for the simultaneous determination of the surface-carrier mobility and the metal-semiconductor work-function difference in MOS transistors. IEEE Transactions on Electron Devices. 35(4). 439–443. 3 indexed citations

20.

Majkusiak, B., et al.. (1987). Investigation of the Al-Ultrathin SiO 2 -Si System by Comparison of Theoretical and Experimental Current-Voltage Characteristics. European Solid-State Device Research Conference. 683–686. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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