T. E. Whall

2.4k total citations
161 papers, 1.9k citations indexed

About

T. E. Whall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. E. Whall has authored 161 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Electrical and Electronic Engineering, 94 papers in Atomic and Molecular Physics, and Optics and 40 papers in Materials Chemistry. Recurrent topics in T. E. Whall's work include Semiconductor materials and devices (87 papers), Advancements in Semiconductor Devices and Circuit Design (84 papers) and Semiconductor Quantum Structures and Devices (61 papers). T. E. Whall is often cited by papers focused on Semiconductor materials and devices (87 papers), Advancements in Semiconductor Devices and Circuit Design (84 papers) and Semiconductor Quantum Structures and Devices (61 papers). T. E. Whall collaborates with scholars based in United Kingdom, Germany and Ukraine. T. E. Whall's co-authors include E. H. C. Parker, R. A. A. Kubiak, P. J. Phillips, O. A. Mironov, M. Myronov, E. H. C. Parker, S. M. Newstead, D. R. Leadley, M.J. Kearney and T. J. Grasby and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. E. Whall

156 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. E. Whall United Kingdom 23 1.6k 1.0k 512 350 92 161 1.9k
E. H. C. Parker United Kingdom 24 1.5k 1.0× 924 0.9× 516 1.0× 384 1.1× 80 0.9× 144 1.8k
David V. Forbes United States 18 1.1k 0.7× 973 0.9× 540 1.1× 249 0.7× 72 0.8× 139 1.3k
S. P. Tobin United States 23 1.4k 0.9× 877 0.9× 277 0.5× 226 0.6× 98 1.1× 88 1.6k
L. González Spain 23 1.1k 0.7× 1.4k 1.4× 556 1.1× 423 1.2× 133 1.4× 119 1.6k
A. Schlachetzki Germany 18 945 0.6× 875 0.9× 228 0.4× 213 0.6× 102 1.1× 129 1.2k
L. L. Taylor United Kingdom 16 559 0.4× 672 0.7× 320 0.6× 242 0.7× 78 0.8× 63 981
K.E. Singer United Kingdom 22 934 0.6× 1.1k 1.0× 318 0.6× 147 0.4× 183 2.0× 74 1.3k
H. Kibbel Germany 30 2.3k 1.5× 1.8k 1.8× 1.2k 2.4× 467 1.3× 57 0.6× 158 2.9k
H. Beneking Germany 20 1.2k 0.7× 823 0.8× 151 0.3× 178 0.5× 102 1.1× 140 1.3k
P. S. Wijewarnasuriya United States 20 1.4k 0.9× 877 0.9× 297 0.6× 149 0.4× 36 0.4× 178 1.5k

Countries citing papers authored by T. E. Whall

Since Specialization
Citations

This map shows the geographic impact of T. E. Whall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. Whall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. Whall more than expected).

Fields of papers citing papers by T. E. Whall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. Whall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. Whall. The network helps show where T. E. Whall may publish in the future.

Co-authorship network of co-authors of T. E. Whall

This figure shows the co-authorship network connecting the top 25 collaborators of T. E. Whall. A scholar is included among the top collaborators of T. E. Whall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. E. Whall. T. E. Whall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prest, M., Hung Q. Nguyen, Andrey Timofeev, et al.. (2015). Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers. Scientific Reports. 5(1). 17398–17398. 12 indexed citations
2.
Zhao, Qing‐Tai, Juha T. Muhonen, Mika Prunnila, et al.. (2014). Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics. 103. 15–18. 1 indexed citations
3.
Schirmacher, Walter, et al.. (2012). Localization–delocalization transition for disordered cubic harmonic lattices. Journal of Physics Condensed Matter. 24(40). 405401–405401. 13 indexed citations
4.
Myronov, M., et al.. (2002). Mobility spectrum computational analysis using a maximum entropy approach. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics. 66(3). 36705–36705. 60 indexed citations
5.
Palmer, Michael J., G. Braithwaite, T. J. Grasby, et al.. (2001). Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise. 179–182. 9 indexed citations
6.
Parker, E. H. C. & T. E. Whall. (1999). SiGe heterostructure CMOS circuits and applications. Solid-State Electronics. 43(8). 1497–1506. 18 indexed citations
7.
Lander, R.J.P., et al.. (1997). On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures. Semiconductor Science and Technology. 12(9). 1064–1071. 28 indexed citations
8.
Braithwaite, G., et al.. (1997). Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases. Journal of Applied Physics. 81(10). 6853–6856. 10 indexed citations
9.
Komnik, Yu. F., et al.. (1996). Peculiarities of electronic properties of δ -layers in epitaxial silicon. II. Effects of weak localization and electron-electron interaction. Low Temperature Physics. 22(10). 897–906. 1 indexed citations
10.
Komnik, Yu. F., et al.. (1996). Peculiarities of electronic properties of δ layers in epitaxial silicon. I. General physical pattern. Low Temperature Physics. 22(10). 891–896.
11.
Nilsson, S., B. Dietrich, W. Kissinger, et al.. (1996). Residual strain in Si-Si1−xGex quantum dots. Solid-State Electronics. 40(1-8). 383–386. 1 indexed citations
12.
Tang, Y. S., et al.. (1995). Raman spectroscopy of dry etched SiSi1−xGex quantum dots. Solid State Communications. 94(5). 369–372. 12 indexed citations
13.
Whall, T. E., et al.. (1993). Low-temperature transport in Si:Sb ultra-thin doping layers. Journal of Physics Condensed Matter. 5(14). L201–L206. 4 indexed citations
14.
Whall, T. E., David W. Smith, Andrew Plews, et al.. (1993). High hole mobilities in a p-type modulation-doped Si/Si0.87Ge0.13/Si heterostructure. Semiconductor Science and Technology. 8(4). 615–616. 19 indexed citations
15.
Whall, T. E., et al.. (1992). Magnetic-field-induced metal-insulator transition in Si:B delta layers. Philosophical Magazine B. 66(3). 379–389. 5 indexed citations
16.
Hemment, P.L.F., et al.. (1992). Si0.57Ge0.43 alloy layers implanted with oxygen: sputtering yields and atomic composition depth profiles. Materials Science and Engineering B. 12(1-2). 21–26. 2 indexed citations
17.
Kubiak, R. A. A., et al.. (1992). Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy. Journal of Applied Physics. 71(1). 118–125. 27 indexed citations
18.
Tang, Y. S., et al.. (1992). Fabrication and characterization of one dimensional hole gas. Superlattices and Microstructures. 12(4). 535–537. 20 indexed citations
19.
Kubiak, R. A. A., S. M. Newstead, Adrian R. Powell, et al.. (1991). The “Computer-Aided Epitaxy” Si:MBE-Control System. MRS Proceedings. 220. 1 indexed citations
20.
Powell, Adrian R., et al.. (1991). Structural and electrical properties of B delta layers in Si. Semiconductor Science and Technology. 6(3). 227–228. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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