Neeraj Nepal

4.0k total citations
128 papers, 3.2k citations indexed

About

Neeraj Nepal is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Neeraj Nepal has authored 128 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Condensed Matter Physics, 62 papers in Electronic, Optical and Magnetic Materials and 55 papers in Electrical and Electronic Engineering. Recurrent topics in Neeraj Nepal's work include GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (59 papers) and Semiconductor materials and devices (50 papers). Neeraj Nepal is often cited by papers focused on GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (59 papers) and Semiconductor materials and devices (50 papers). Neeraj Nepal collaborates with scholars based in United States, United Kingdom and South Korea. Neeraj Nepal's co-authors include H. X. Jiang, J. Y. Lin, M. L. Nakarmi, David J. Meyer, Charles R. Eddy, D. S. Katzer, Brian P. Downey, Matthew T. Hardy, David F. Storm and Jennifer K. Hite and has published in prestigious journals such as Nature, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Neeraj Nepal

125 papers receiving 3.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Neeraj Nepal United States 35 2.2k 1.7k 1.5k 1.3k 758 128 3.2k
Jennifer K. Hite United States 33 2.0k 0.9× 2.0k 1.2× 1.4k 0.9× 1.8k 1.3× 472 0.6× 159 3.5k
M. L. Nakarmi United States 29 2.9k 1.3× 1.6k 0.9× 1.9k 1.3× 973 0.7× 973 1.3× 63 3.4k
A. N. Smirnov Russia 19 1.6k 0.7× 1.5k 0.9× 892 0.6× 718 0.5× 661 0.9× 151 2.5k
T. Paskova Sweden 31 2.7k 1.2× 1.8k 1.1× 1.6k 1.1× 1.1k 0.8× 543 0.7× 207 3.4k
James W. Pomeroy United Kingdom 33 1.9k 0.9× 2.0k 1.2× 626 0.4× 1.9k 1.4× 279 0.4× 138 3.3k
P. Vennéguès France 38 3.3k 1.5× 2.1k 1.3× 1.9k 1.3× 1.5k 1.1× 732 1.0× 172 4.4k
N. B. Smirnov Russia 37 2.9k 1.3× 2.6k 1.6× 2.9k 1.9× 2.2k 1.7× 539 0.7× 243 4.9k
S. A. Nikishin United States 28 1.9k 0.9× 874 0.5× 810 0.5× 1.1k 0.9× 527 0.7× 117 2.5k
Takashi Jimbo Japan 31 1.5k 0.7× 1.6k 0.9× 877 0.6× 1.8k 1.4× 497 0.7× 221 3.3k
J. Christen Germany 20 1.2k 0.5× 2.1k 1.3× 1.5k 1.0× 1.3k 1.0× 327 0.4× 66 2.9k

Countries citing papers authored by Neeraj Nepal

Since Specialization
Citations

This map shows the geographic impact of Neeraj Nepal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Neeraj Nepal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Neeraj Nepal more than expected).

Fields of papers citing papers by Neeraj Nepal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Neeraj Nepal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Neeraj Nepal. The network helps show where Neeraj Nepal may publish in the future.

Co-authorship network of co-authors of Neeraj Nepal

This figure shows the co-authorship network connecting the top 25 collaborators of Neeraj Nepal. A scholar is included among the top collaborators of Neeraj Nepal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Neeraj Nepal. Neeraj Nepal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Spencer, Joseph, Yuan Qin, Alan G. Jacobs, et al.. (2025). Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability. SHILAP Revista de lepidopterología. 1(1). 1 indexed citations
2.
Jin, Eric N., Andrew C. Lang, Brian P. Downey, et al.. (2023). Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures. Journal of Applied Physics. 134(2). 5 indexed citations
3.
Hardy, Matthew T., Andrew C. Lang, Eric N. Jin, et al.. (2023). Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy. Journal of Applied Physics. 134(10). 13 indexed citations
4.
Khalsa, Guru, Celesta S. Chang, D. S. Katzer, et al.. (2021). An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7(8). 18 indexed citations
5.
Jin, Eric N., Brian P. Downey, Vikrant J. Gokhale, et al.. (2021). Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures. APL Materials. 9(11). 8 indexed citations
6.
Tadjer, Marko J., Fikadu Alema, A. Osinsky, et al.. (2020). Characterization of β-Ga 2 O 3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. Journal of Physics D Applied Physics. 54(3). 34005–34005. 35 indexed citations
7.
Storm, David F., Tyler A. Growden, Jeffrey W. Daulton, et al.. (2020). Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(3). 6 indexed citations
8.
Fares, Chaker, Marko J. Tadjer, J. Woodward, et al.. (2019). Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3. ECS Journal of Solid State Science and Technology. 8(7). Q3154–Q3158. 20 indexed citations
9.
Currie, Marc, Virginia D. Wheeler, Brian P. Downey, et al.. (2019). Asymmetric hysteresis in vanadium dioxide thin films. Optical Materials Express. 9(9). 3717–3717. 14 indexed citations
10.
Hardy, Matthew T., David J. Meyer, Neeraj Nepal, et al.. (2018). Scandium Aluminum Nitride as an Emerging Material for High Power Transistors. 1–3. 6 indexed citations
11.
Downey, Brian P., D. S. Katzer, Neeraj Nepal, Matthew T. Hardy, & David J. Meyer. (2017). XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(5). 4 indexed citations
12.
Hardy, Matthew T., David F. Storm, D. S. Katzer, et al.. (2016). Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. Journal of Visualized Experiments. 2 indexed citations
13.
Nepal, Neeraj, N. Y. Garces, Jennifer K. Hite, et al.. (2014). Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 565–568. 13 indexed citations
14.
Nepal, Neeraj, Brandon Mitchell, J. Li, et al.. (2011). Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields. Applied Physics Letters. 99(12). 10 indexed citations
15.
Steckl, A. J., et al.. (2010). Electrical and magnetic properties of GaN codoped with Eu and Si. Journal of Applied Physics. 107(1). 15 indexed citations
16.
Nakarmi, M. L., et al.. (2007). Photoluminescence studies of impurity transitions involving nitrogen vacancies in Mg-doped AlGaN alloys. APS. 1 indexed citations
17.
Pantha, B. N., Neeraj Nepal, T. M. Al Tahtamouni, et al.. (2007). Correlation between biaxial stress and free exciton transition in AlN epilayers. Applied Physics Letters. 91(12). 32 indexed citations
18.
Nepal, Neeraj, et al.. (2007). Correlation between photoluminescence and magnetic properties of GaMnN films. Applied Physics Letters. 91(24). 11 indexed citations
19.
Nepal, Neeraj, Jagat Shakya, M. L. Nakarmi, J. Y. Lin, & H. X. Jiang. (2006). Deep ultraviolet photoluminescence studies of AlN photonic crystals. Applied Physics Letters. 88(13). 8 indexed citations
20.
Zavada, J. M., S. X. Jin, Neeraj Nepal, et al.. (2004). Electroluminescent properties of erbium-doped III–N light-emitting diodes. Applied Physics Letters. 84(7). 1061–1063. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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