R. Coffie

2.0k citations

40 papers · 1.6k indexed · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Electrical and Electronic Engineering 35
- Radio Frequency Integrated Circuit Design 14
- Semiconductor materials and devices 14
- Silicon Carbide Semiconductor Technologies 7
- Advancements in Semiconductor Devices and Circuit Design 3

Co-authors: Umesh K. Mishra S. Heikman S. Keller D. Buttari Steven P. DenBaars L. Shen Alessandro Chini Brendan Moran
Journals: IEEE Electron Device Letters (9 papers)Electronics Letters (4 papers)Applied Physics Letters (3 papers)IEEE Microwave and Wireless Components Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States Italy Australia

In The Last Decade

R. Coffie

38 papers receiving 1.5k citations

Peers

Countries citing papers authored by R. Coffie

Since Specialization

Citations

This map shows the geographic impact of R. Coffie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Coffie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Coffie more than expected).

Fields of papers citing papers by R. Coffie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Coffie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Coffie. The network helps show where R. Coffie may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Coffie, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Coffie Line = papers co-authored together R. Coffie links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements SHILAP Revista de lepidopterología ·Nicholas C. Miller, Michael Elliott, M. Seifert, Ryan Gilbert, J. Uyeda, R. Coffie	2023	3
2	2D Electrostatic Fields R. Coffie	2021	1
3	Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design Brian P. Downey, Andy Xie, Shawn Mack, D. S. Katzer, James G. Champlain, Yu Cao, Neeraj Nepal, Tyler A. Growden, Vikrant J. Gokhale, R. Coffie, Matthew T. Hardy, Edward Beam, Cathy Lee, David J. Meyer	2020	4
4	Calculating drain delay in high electron mobility transistors Solid-State Electronics ·R. Coffie	2015	0
5	In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy Electronics Letters ·B. Heying, Ioulia Smorchkova, R. Coffie, Vincent Gambin, Chitra Sartpeth, أ.د أحمد حسين عبد المعطي, Timothy T.-Y. Lam, Karen Luci Amorim Mendanha, V. Fadeyev, M. Wójtowicz	2007	16
6	Impact of A1N Interalayer on Reliability of AlGaN/GaN HEMTS R. Coffie, Oren Rodriguez, Ioulia Smorchkova, M. Wójtowicz, Yu‐Ting Chou, B. Heying, A.K. Oki	2006	9
7	A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO IEEE Microwave and Wireless Components Letters ·Xing Lan, M. Wójtowicz, Ioulia Smorchkova, R. Coffie, R. Tsai, B. Heying, TANG Chuan-si, Susi Wijuniamurti, Кувшинникова Ольга Александровна, C. Namba, A.K. Oki, Thomas Wong	2006	16
8	Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs IRIS UNIMORE (University of Modena and Reggio Emilia) ·Alessandro Chini, D. Buttari, R. Coffie, L. Shen, Tomás Palacios, S. Heikman, A. Chakraborty, S. Keller, Umesh K. Mishra	2004	3
9	High performance AlGaN/GaN HEMTs with a field plated gate structure IRIS UNIMORE (University of Modena and Reggio Emilia) ·Alessandro Chini, D. Buttari, R. Coffie, Likun Shen, S. Heikman, A. Chakraborty, S. Keller, Umesh K. Mishra	2004	5
10	12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters ·Alessandro Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, Umesh K. Mishra	2004	90
11	Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials ·L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, Alessandro Chini, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2004	18
12	P-GaN/AlGaN/GaN high electron mobility transistors IRIS UNIMORE (University of Modena and Reggio Emilia) ·R. Coffie, S. Heikman, D. Buttari, Sarah L. Keller, Alessandro Chini, L. Shen, N. Zhang, Louise Johansson Spaak, Debdeep Jena, Umesh K. Mishra	2003	3
13	2.1 A/mm current density AlGaN/GaN HEMT Electronics Letters ·Alessandro Chini, R. Coffie, Gaudenzio Meneghesso, Enrico Zanoni, D. Buttari, S. Heikman, S. Keller, Umesh K. Mishra	2003	33
14	Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures Applied Physics Letters ·D. Buttari, Alessandro Chini, Tomás Palacios, R. Coffie, Lingyan Shen, Huili Grace Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, U. K. Mishra	2003	70
15	Systematic characterization of Cl₂ reactive ion etching for gate recessing in AlGaN/GaN HEMTs IEEE Electron Device Letters ·D. Buttari, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni, P. Chavarkar, R. Coffie, V Mezzano, R Chien, L. Shen, Huili Grace Xing, Chan Zheng, Umesh K. Mishra	2002	32
16	Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys Applied Physics Letters ·Debdeep Jena, S. Heikman, Daniel Green, D. Buttari, R. Coffie, Huili Grace Xing, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Ioulia Smorchkova	2002	151
17	Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors Journal of Applied Physics ·H. Marchand, Lingyan Zhao, N. Zhang, Brendan Moran, R. Coffie, Umesh K. Mishra, James S. Speck, Steven P. DenBaars, Jaime A. Freitas	2001	153
18	Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN physica status solidi (a) ·S. Heikman, S. Keller, Brendan Moran, R. Coffie, Steven P. DenBaars, Umesh K. Mishra	2001	7
19	Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz IEEE Electron Device Letters ·Ching‐Hui Chen, R. Coffie, K. Krishnamurthy, S. Keller, M.J.W. Rodwell, Umesh K. Mishra	2000	30
20	Intracavity gain and absorption dynamics of hybrid modelocked semiconductor lasers using multiple quantum well saturable absorbers Applied Physics Letters ·S. Gee, R. Coffie, Peter J. Delfyett, G.A. Alphonse, J.C. Connolly	1997	17

About R. Coffie

R. Coffie is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 40 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Radio Frequency Integrated Circuit Design (14 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (12 papers), Ga2O3 and related materials (9 papers), Silicon Carbide Semiconductor Technologies (7 papers), ZnO doping and properties (4 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (647 citations), Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (375 citations) and Mechanics of Materials (222 citations). R. Coffie has collaborated with scholars based in United States, Italy and Australia. Frequent co-authors include Umesh K. Mishra, S. Heikman, S. Keller, D. Buttari, Steven P. DenBaars, L. Shen, Alessandro Chini, Brendan Moran, I. P. Smorchkova and N.-Q. Zhang. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, IEEE Microwave and Wireless Components Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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